with a PN heterojunction gate

Industry

CPC
H01L29/66916

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66916with a PN heterojunction gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction devices and methods for fabricating the same
- Patent number 11,342,420
- Issue date May 24, 2022
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical HJFET with source-P block contact
- Patent number 11,239,321
- Issue date Feb 1, 2022
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including hyper-abrupt junction region includ...
- Patent number 11,183,565
- Issue date Nov 23, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical JFET with regrown channel and dielectric gate
- Patent number 10,971,587
- Issue date Apr 6, 2021
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor devices with hyper-abrupt junction...
- Patent number 10,937,868
- Issue date Mar 2, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices in...
- Patent number 10,854,776
- Issue date Dec 1, 2020
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing semiconduc...
- Patent number 10,854,777
- Issue date Dec 1, 2020
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable display based on thin film gallium and nitrogen cont...
- Patent number 10,854,778
- Issue date Dec 1, 2020
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with hyper-abrupt junction region including spaced-apart s...
- Patent number 10,825,902
- Issue date Nov 3, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction devices and methods for fabricating the same
- Patent number 10,777,644
- Issue date Sep 15, 2020
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide shielded-MOSFET embedded with a trench Schottky dio...
- Patent number 10,777,689
- Issue date Sep 15, 2020
- Hong Kong Applied Science and Technology Research Institute Company, Limited
- Shu Kin Yau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,720,453
- Issue date Jul 21, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,672,804
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 10,629,689
- Issue date Apr 21, 2020
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical HJFET with source-P block contact
- Patent number 10,535,740
- Issue date Jan 14, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical JFET with regrown channel and dielectric gate
- Patent number 10,535,741
- Issue date Jan 14, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,522,663
- Issue date Dec 31, 2019
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 10,510,581
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,396,103
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bidirectional bipolar-mode JFET driver circuitry
- Patent number 10,374,070
- Issue date Aug 6, 2019
- John Wood
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,283,626
- Issue date May 7, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electronic memory devices
- Patent number 10,243,086
- Issue date Mar 26, 2019
- LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED
- Manus Hayne
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal-semiconductor heterodimension field effect transistors (MESHF...
- Patent number 10,153,273
- Issue date Dec 11, 2018
- Northrop Grumman Systems Corporation
- Roger S. Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid junction field-effect transistor and active matrix structure
- Patent number 10,128,452
- Issue date Nov 13, 2018
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned heterojunction field effect transistor
- Patent number 10,115,833
- Issue date Oct 30, 2018
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,079,294
- Issue date Sep 18, 2018
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable RGB display based on thin film gallium and nitrogen...
- Patent number 10,002,928
- Issue date Jun 19, 2018
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with charge enhanced field plate structure and method
- Patent number 9,972,703
- Issue date May 15, 2018
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES
- Publication number 20230178611
- Publication date Jun 8, 2023
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Metal Gate of PMOS
- Publication number 20230132408
- Publication date May 4, 2023
- Shanghai Huali Integrated Circuit Corporation
- Zhaoqin Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LAS...
- Publication number 20220344476
- Publication date Oct 27, 2022
- KYOCERA SLD Laser, Inc.
- Philip Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...
- Publication number 20210020749
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...
- Publication number 20210020750
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20210005721
- Publication date Jan 7, 2021
- GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY O...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical HJFET with Source-P Block Contact
- Publication number 20200119148
- Publication date Apr 16, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate
- Publication number 20200111878
- Publication date Apr 9, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT
- Publication number 20190312066
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT
- Publication number 20190252419
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE
- Publication number 20190019884
- Publication date Jan 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical HJFET with Source-P Block Contact
- Publication number 20180219071
- Publication date Aug 2, 2018
- Hua Su Dian Li (Su Zhou) Co. Ltd.
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate
- Publication number 20180219072
- Publication date Aug 2, 2018
- Hua Su Dian Li (Su Zhou) Co. Ltd.
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20180090600
- Publication date Mar 29, 2018
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto TOMITA
- C30 - CRYSTAL GROWTH
Information Patent Application
INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE
- Publication number 20170373171
- Publication date Dec 28, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Memory Devices
- Publication number 20170352767
- Publication date Dec 7, 2017
- LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED
- Manus Hayne
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20170229588
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID JUNCTION FIELD-EFFECT TRANSISTOR AND ACTIVE MATRIX STRUCTURE
- Publication number 20170179412
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD
- Publication number 20160343833
- Publication date Nov 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160056245
- Publication date Feb 25, 2016
- Panasonic Intellectual Property Management Co., Ltd.
- YUSUKE KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A JUNCTION FIELD-EFFECT TRANSISTOR (JFET)
- Publication number 20150349084
- Publication date Dec 3, 2015
- Institut National Des Sciences Appliquees De Lyon
- Dominique TOURNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20150325654
- Publication date Nov 12, 2015
- STMicroelectronics S.r.l.
- DONATO CORONA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
- Publication number 20150255582
- Publication date Sep 10, 2015
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140370669
- Publication date Dec 18, 2014
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-FILM HYBRID COMPLEMENTARY CIRCUITS
- Publication number 20140361303
- Publication date Dec 11, 2014
- Tze-Chiang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
THIN-FILM HYBRID COMPLEMENTARY CIRCUITS
- Publication number 20140361350
- Publication date Dec 11, 2014
- International Business Machines Corporation
- Tze-Chiang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Relaxed Silicon Germanium Platform for High Speed CMOS Electronics...
- Publication number 20140342523
- Publication date Nov 20, 2014
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JFET Devices with Increased Barrier Height and Methods of Making Same
- Publication number 20140246680
- Publication date Sep 4, 2014
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...
- Publication number 20140242778
- Publication date Aug 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...
- Publication number 20140235021
- Publication date Aug 21, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS

with a PN heterojunction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturable thin film gallium and nitrogen containing devices

Manufacturable thin film gallium and nitrogen containing devices

Heterojunction devices and methods for fabricating the same

GaN lateral vertical HJFET with source-P block contact

Semiconductor devices including hyper-abrupt junction region includ...

GaN lateral vertical JFET with regrown channel and dielectric gate

Method for making semiconductor devices with hyper-abrupt junction...

Manufacturable thin film gallium and nitrogen containing devices in...

Manufacturable thin film gallium and nitrogen containing semiconduc...

Manufacturable display based on thin film gallium and nitrogen cont...

Varactor with hyper-abrupt junction region including spaced-apart s...

Heterojunction devices and methods for fabricating the same

Silicon-carbide shielded-MOSFET embedded with a trench Schottky dio...

Thin-film negative differential resistance and neuronal circuit

Thin-film negative differential resistance and neuronal circuit

Manufacturable thin film gallium and nitrogen containing devices

GaN lateral vertical HJFET with source-P block contact

GaN lateral vertical JFET with regrown channel and dielectric gate

Integrated JFET structure with implanted backgate

Methods of forming strained-semiconductor-on-insulator device struc...

Thin-film negative differential resistance and neuronal circuit

Bidirectional bipolar-mode JFET driver circuitry

Semiconductor device and manufacturing method of the same

Electronic memory devices

Metal-semiconductor heterodimension field effect transistors (MESHF...

Hybrid junction field-effect transistor and active matrix structure

Self-aligned heterojunction field effect transistor

Integrated JFET structure with implanted backgate

Manufacturable RGB display based on thin film gallium and nitrogen...

Transistor with charge enhanced field plate structure and method

Patents Applicationslast 30 patents

MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES

Method for Manufacturing Metal Gate of PMOS

MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LAS...

SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...

METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...

HETEROJUNCTION DEVICES AND METHODS FOR FABRICATING THE SAME

GaN Lateral Vertical HJFET with Source-P Block Contact

GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate

THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT

THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT

INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE

GaN Lateral Vertical HJFET with Source-P Block Contact

GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE

Electronic Memory Devices

SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR

HYBRID JUNCTION FIELD-EFFECT TRANSISTOR AND ACTIVE MATRIX STRUCTURE

TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD OF PRODUCING A JUNCTION FIELD-EFFECT TRANSISTOR (JFET)

INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF

INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

THIN-FILM HYBRID COMPLEMENTARY CIRCUITS

THIN-FILM HYBRID COMPLEMENTARY CIRCUITS

Relaxed Silicon Germanium Platform for High Speed CMOS Electronics...

JFET Devices with Increased Barrier Height and Methods of Making Same

Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...

JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...