with a significant overlap between the lightly doped extension and the gate electrode

Industry

CPC
H01L29/7836

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7836with a significant overlap between the lightly doped extension and the gate electrode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a MISFET and method of manufacturing...
- Patent number 11,961,909
- Issue date Apr 16, 2024
- Renesas Electronics Corporation
- Hideki Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate for an MV device
- Patent number 11,948,938
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having asymmetric threshold voltage and buck converter
- Patent number 11,936,299
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image pickup device and method of tracking subject thereof
- Patent number 11,860,511
- Issue date Jan 2, 2024
- MAXELL, LTD.
- Hiroshi Shimizu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Device with a recessed gate electrode that has high thickness unifo...
- Patent number 11,846,871
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High frequency transistor
- Patent number 11,715,796
- Issue date Aug 1, 2023
- Kabushiki Kaisha Toshiba
- Mitsutoshi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with contact plugs
- Patent number 11,646,370
- Issue date May 9, 2023
- Rohm Co., Ltd.
- So Nagakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Patent number 11,640,981
- Issue date May 2, 2023
- United Microelectronics Corp.
- Shin-Hung Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Patent number 11,569,380
- Issue date Jan 31, 2023
- United Microelectronics Corp.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bent gate logic device
- Patent number 11,532,629
- Issue date Dec 20, 2022
- Texas Instmments Incorporated
- Nandakumar Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Patent number 11,527,645
- Issue date Dec 13, 2022
- Kioxia Corporation
- Tadayoshi Uechi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate for an MV device
- Patent number 11,527,531
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and associated fabricating method
- Patent number 11,508,845
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistor with vertical current paths an...
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- Issue date Sep 20, 2022
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with a recessed gate electrode that has high thickness unifo...
- Patent number 11,445,104
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Display system and method for forming an output buffer of a source...
- Patent number 11,436,992
- Issue date Sep 6, 2022
- Vanguard International Semiconductor Corporation
- Yu-Lung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,404,573
- Issue date Aug 2, 2022
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 11,373,872
- Issue date Jun 28, 2022
- KEY FOUNDRY CO., LTD.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,328,957
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET and JBSFET cell topologies with superior high frequenc...
- Patent number 11,276,779
- Issue date Mar 15, 2022
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising a lengthened gate
- Patent number 11,270,886
- Issue date Mar 8, 2022
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor and fabrication method thereof
- Patent number 11,217,693
- Issue date Jan 4, 2022
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with contact plugs
- Patent number 11,205,720
- Issue date Dec 21, 2021
- Rohm Co., Ltd.
- So Nagakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage PMOS (HVPMOS) transistor with a composite drift region...
- Patent number 11,133,413
- Issue date Sep 28, 2021
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Chenggong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors containing electric field assist layers at...
- Patent number 11,004,974
- Issue date May 11, 2021
- SanDisk Technologies LLC
- Takuma Takimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display driver semiconductor device and manufacturing method thereof
- Patent number 10,985,192
- Issue date Apr 20, 2021
- KEY FOUNDRY., LTD.
- Bo Seok Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 10,964,813
- Issue date Mar 30, 2021
- Semiconductor Manufacturing (Beijing) International Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 10,868,176
- Issue date Dec 15, 2020
- Sony Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and associated fabricating method
- Patent number 10,847,652
- Issue date Nov 24, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
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- Mitsutoshi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20240105723
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- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MV DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240096989
- Publication date Mar 21, 2024
- Shanghai Huali Integrated Circuit Corporation
- Qiwei WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE PICKUP DEVICE AND METHOD OF TRACKING SUBJECT THEREOF
- Publication number 20240069412
- Publication date Feb 29, 2024
- Maxell, Ltd.
- Hiroshi SHIMIZU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...
- Publication number 20240061320
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240047580
- Publication date Feb 8, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...
- Publication number 20230361187
- Publication date Nov 9, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhaohong LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230282745
- Publication date Sep 7, 2023
- RENESAS ELECTRONICS CORPORATION
- Hideki SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTACT PLUGS
- Publication number 20230246105
- Publication date Aug 3, 2023
- ROHM CO., LTD.
- So NAGAKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20230080932
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHEN-LIANG CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE AND MAN...
- Publication number 20230069666
- Publication date Mar 2, 2023
- KIOXIA Corporation
- Takayuki ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure
- Publication number 20230006062
- Publication date Jan 5, 2023
- UNITED MICROELECTRONICS CORP.
- Wei-Hsuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BENT GATE LOGIC DEVICE
- Publication number 20220399337
- Publication date Dec 15, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Nandakumar Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH INCREASED GATE DIELECTRIC THICKNESS BETWE...
- Publication number 20220393028
- Publication date Dec 8, 2022
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure and manufacturing method thereof
- Publication number 20220367653
- Publication date Nov 17, 2022
- UNITED MICROELECTRONICS CORP.
- Shin-Hung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...
- Publication number 20220353430
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RECESSED GATE FOR AN MV DEVICE
- Publication number 20220352152
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20220352373
- Publication date Nov 3, 2022
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY TRANSISTOR
- Publication number 20220293791
- Publication date Sep 15, 2022
- Kabushiki Kaisha Toshiba
- Mitsutoshi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...
- Publication number 20220277960
- Publication date Sep 1, 2022
- KEY FOUNDRY CO., LTD.
- Hee Hwan JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220254688
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...
- Publication number 20220109071
- Publication date Apr 7, 2022
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTACT PLUGS
- Publication number 20220069121
- Publication date Mar 3, 2022
- ROHM CO., LTD.
- So NAGAKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE PMOS (HVPMOS) TRANSISTOR WITH A COMPOSITE DRIFT REGION...
- Publication number 20210391463
- Publication date Dec 16, 2021
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Chenggong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210265217
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20210167208
- Publication date Jun 3, 2021
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20210074858
- Publication date Mar 11, 2021
- Sony Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20210013341
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- CHEN-LIANG CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING A LENGTHENED GATE
- Publication number 20200395466
- Publication date Dec 17, 2020
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200381551
- Publication date Dec 3, 2020
- ROHM CO., LTD.
- So NAGAKURA
- H01 - BASIC ELECTRIC ELEMENTS

with a significant overlap between the lightly doped extension and the gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including a MISFET and method of manufacturing...

Recessed gate for an MV device

Transistor having asymmetric threshold voltage and buck converter

Metal oxide semiconductor having epitaxial source drain regions and...

Image pickup device and method of tracking subject thereof

Device with a recessed gate electrode that has high thickness unifo...

High frequency transistor

Semiconductor device with contact plugs

Semiconductor structure and manufacturing method thereof

Semiconductor structure

Bent gate logic device

Semiconductor device

Recessed gate for an MV device

Semiconductor structure and associated fabricating method

High voltage field effect transistor with vertical current paths an...

Device with a recessed gate electrode that has high thickness unifo...

Display system and method for forming an output buffer of a source...

Metal oxide semiconductor having epitaxial source drain regions and...

Manufacturing method of semiconductor device using gate-through imp...

Semiconductor device and manufacturing method thereof

Power MOSFET and JBSFET cell topologies with superior high frequenc...

Transistor comprising a lengthened gate

Semiconductor transistor and fabrication method thereof

Semiconductor device with contact plugs

High voltage PMOS (HVPMOS) transistor with a composite drift region...

Field effect transistors containing electric field assist layers at...

Display driver semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method therefor

Metal oxide semiconductor having epitaxial source drain regions and...

Semiconductor structure and associated fabricating method

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE

MV DEVICE AND METHOD FOR MANUFACTURING SAME

IMAGE PICKUP DEVICE AND METHOD OF TRACKING SUBJECT THEREOF

DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH CONTACT PLUGS

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE AND MAN...

Semiconductor structure

BENT GATE LOGIC DEVICE

TRANSISTOR STRUCTURE WITH INCREASED GATE DIELECTRIC THICKNESS BETWE...

Semiconductor structure and manufacturing method thereof

DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...

RECESSED GATE FOR AN MV DEVICE

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

HIGH FREQUENCY TRANSISTOR

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...

SEMICONDUCTOR DEVICE WITH CONTACT PLUGS

HIGH VOLTAGE PMOS (HVPMOS) TRANSISTOR WITH A COMPOSITE DRIFT REGION...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

TRANSISTOR COMPRISING A LENGTHENED GATE

SEMICONDUCTOR DEVICE