with a silicide layer contacting the silicon layer

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CPC
H01L29/4933

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4933with a silicide layer contacting the silicon layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with intergrated resistor at element region bo...
- Patent number 12,206,019
- Issue date Jan 21, 2025
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 12,199,149
- Issue date Jan 14, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor package
- Patent number 12,154,900
- Issue date Nov 26, 2024
- Rohm Co., Ltd.
- Kentaro Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum alloy film and semiconductor device using the same
- Patent number 12,154,963
- Issue date Nov 26, 2024
- Denso Corporation
- Hiroki Tsuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structures
- Patent number 12,148,752
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside vias in semiconductor device
- Patent number 12,132,092
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in a level shifter with electrostatic discharg...
- Patent number 12,057,442
- Issue date Aug 6, 2024
- MagnaChip Semiconductor, Ltd.
- Kyong Jin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-silicide structure for a semiconductor device and a method fo...
- Patent number 12,040,375
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 12,029,041
- Issue date Jul 2, 2024
- Infineon Technologies LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon implantation for thicker gate silicide
- Patent number 12,020,937
- Issue date Jun 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
And manufacture of power devices having increased cross over current
- Patent number 11,990,519
- Issue date May 21, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective formation of titanium silicide and titanium nitride by hy...
- Patent number 11,972,951
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide-sandwiched source/drain region and method of fabricating same
- Patent number 11,967,621
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage polysilicon gate in high-K metal gate device
- Patent number 11,950,413
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,942,475
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and fabrication method thereof
- Patent number 11,943,918
- Issue date Mar 26, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Liang Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,935,950
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing microelectronic components
- Patent number 11,929,290
- Issue date Mar 12, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,916,060
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 11,908,900
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure manufacturing method and two semiconductor...
- Patent number 11,887,854
- Issue date Jan 30, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor image sensor device
- Patent number 11,881,493
- Issue date Jan 23, 2024
- United Microelectronics Corp.
- Ming-Shing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced-form-factor transistor with self-aligned terminals and adju...
- Patent number 11,869,972
- Issue date Jan 9, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 11,798,994
- Issue date Oct 24, 2023
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including capacitors including multiple dielectric mate...
- Patent number 11,799,038
- Issue date Oct 24, 2023
- Lodestar Licensing Group LLC
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including a string selection line g...
- Patent number 11,792,994
- Issue date Oct 17, 2023
- Samsung Electronics Co., Ltd.
- Kohji Kanamori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with shallow trench isolation features with...
- Patent number 11,764,225
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME
- Publication number 20240421210
- Publication date Dec 19, 2024
- Shanghai Huali Integrated Circuit Corporation
- Zhi TIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240379758
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip LOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURES
- Publication number 20240379671
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Vias in Semiconductor Device
- Publication number 20240371957
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Formation Of Titanium Silicide And Titanium Nitride By Hy...
- Publication number 20240249948
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF...
- Publication number 20240234526
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...
- Publication number 20240206183
- Publication date Jun 20, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ARRAYS WITH CONTROLLABLE GATE VOLTAGE
- Publication number 20240194535
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Transistor Structure
- Publication number 20240186412
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240178279
- Publication date May 30, 2024
- SK HYNIX INC.
- Wan Sup SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20240153943
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20240136401
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
- Publication number 20240096956
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Hyungjoo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...
- Publication number 20240063062
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kouta ONOGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING CAPACITORS INCLUDING MULTIPLE DIELECTRIC MATE...
- Publication number 20240038904
- Publication date Feb 1, 2024
- Lodestar Licensing Group LLC
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
POWER MOSFET DEVICE WITH ISOLATED GATE STRUCTURE AND MANUFACTURING...
- Publication number 20240014286
- Publication date Jan 11, 2024
- STMicroelectronics S.r.l.
- Mario Giuseppe SAGGIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20240008279
- Publication date Jan 4, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20230420497
- Publication date Dec 28, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FO...
- Publication number 20230402524
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20230378183
- Publication date Nov 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON IMPLANTATION FOR THICKER GATE SILICIDE
- Publication number 20230307238
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230255024
- Publication date Aug 10, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Liang HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...
- Publication number 20230245891
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME
- Publication number 20230154991
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE
- Publication number 20230109700
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE BACKSIDE CONTACT
- Publication number 20230098930
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230091860
- Publication date Mar 23, 2023
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGE SENSOR DEVICE
- Publication number 20230082279
- Publication date Mar 16, 2023
- UNITED MICROELECTRONICS CORP.
- Ming-Shing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...
- Publication number 20230058216
- Publication date Feb 23, 2023
- Peking University
- Qianqian Huang
- H01 - BASIC ELECTRIC ELEMENTS

with a silicide layer contacting the silicon layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with intergrated resistor at element region bo...

Manufacture of power devices having increased cross over current

Semiconductor device including gate electrode for applying tensile...

Method of forming a transistor device with a gate structure having...

Semiconductor device and semiconductor package

Aluminum alloy film and semiconductor device using the same

High voltage transistor structures

Backside vias in semiconductor device

Semiconductor device in a level shifter with electrostatic discharg...

Multi-silicide structure for a semiconductor device and a method fo...

Method of forming high-voltage transistor with thin gate poly

Carbon implantation for thicker gate silicide

And manufacture of power devices having increased cross over current

Selective formation of titanium silicide and titanium nitride by hy...

Silicide-sandwiched source/drain region and method of fabricating same

High voltage polysilicon gate in high-K metal gate device

High voltage transistor structure

Memory structure and fabrication method thereof

High voltage transistor structure

Method of manufacturing microelectronic components

Semiconductor device having improved electrostatic discharge protec...

Passivation layer for epitaxial semiconductor process

Semiconductor structure manufacturing method and two semiconductor...

Semiconductor image sensor device

Reduced-form-factor transistor with self-aligned terminals and adju...

Manufacture of power devices having increased cross over current

Apparatuses including capacitors including multiple dielectric mate...

Power device integration on a common substrate

Three-dimensional memory device including a string selection line g...

Field effect transistor with shallow trench isolation features with...

Patents Applicationslast 30 patents

HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

HIGH VOLTAGE TRANSISTOR STRUCTURES

Backside Vias in Semiconductor Device

Selective Formation Of Titanium Silicide And Titanium Nitride By Hy...

SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF...

HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...

TRANSISTOR ARRAYS WITH CONTROLLABLE GATE VOLTAGE

High Voltage Transistor Structure

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...

APPARATUSES INCLUDING CAPACITORS INCLUDING MULTIPLE DIELECTRIC MATE...

POWER MOSFET DEVICE WITH ISOLATED GATE STRUCTURE AND MANUFACTURING...

Method of Forming High-Voltage Transistor with Thin Gate Poly

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FO...

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

CARBON IMPLANTATION FOR THICKER GATE SILICIDE

MEMORY STRUCTURE AND FABRICATION METHOD THEREOF

SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...

SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME

HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE

SILICIDE BACKSIDE CONTACT

SEMICONDUCTOR DEVICE

SEMICONDUCTOR IMAGE SENSOR DEVICE

A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...