with a step of forming an insulating sidewall spacer

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H01L29/66689

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66689with a step of forming an insulating sidewall spacer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Strained transistor with conductive plate
- Patent number 12,166,108
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high-resistance polysilicon resistor form...
- Patent number 12,159,867
- Issue date Dec 3, 2024
- SK keyfoundry Inc.
- Heuiseung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an integrated circuit with drain well having multi...
- Patent number 12,148,827
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zheng Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with implant alignment spacers
- Patent number 12,132,099
- Issue date Oct 29, 2024
- NXP USA, INC.
- Hernan Rueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having conductive field plate overlapping an e...
- Patent number 12,119,384
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of high voltage semiconductor device
- Patent number 12,080,794
- Issue date Sep 3, 2024
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 11,942,541
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hong-Shyang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with drain well having multiple zones
- Patent number 11,837,659
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method of high...
- Patent number 11,791,409
- Issue date Oct 17, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with enhanced safe operating area and method of manufacture
- Patent number 11,764,297
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lianjie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming shield structure for backside through substrate v...
- Patent number 11,764,129
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 11,711,917
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k side wall spacers for gate spacers
- Patent number 11,699,737
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation layer
- Patent number 11,682,725
- Issue date Jun 20, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure and manufacturing method thereof
- Patent number 11,682,724
- Issue date Jun 20, 2023
- United Microelectronics Corp.
- Chun-Ya Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method thereof
- Patent number 11,682,726
- Issue date Jun 20, 2023
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with implant alignment spacers
- Patent number 11,664,443
- Issue date May 30, 2023
- NXP USA, INC.
- Hernan Rueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET transistors with hybrid contact
- Patent number 11,646,371
- Issue date May 9, 2023
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with implant alignment spacers
- Patent number 11,616,134
- Issue date Mar 28, 2023
- NXP USA, INC.
- Hernan Rueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and manufacture thereof
- Patent number 11,594,631
- Issue date Feb 28, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method of high...
- Patent number 11,581,434
- Issue date Feb 14, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a field-effect transistor
- Patent number 11,545,569
- Issue date Jan 3, 2023
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with metal gate and metal field plate...
- Patent number 11,532,742
- Issue date Dec 20, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a conductive...
- Patent number 11,527,624
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching LDMOS device and method for making the same
- Patent number 11,527,644
- Issue date Dec 13, 2022
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Xinjie Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin poly field plate design
- Patent number 11,515,398
- Issue date Nov 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Li Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) amplifier device on silicon-on-insulator (SOI)...
- Patent number 11,482,543
- Issue date Oct 25, 2022
- metaMOS Solutions Inc.
- Timothy Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with enhanced safe operating area and method of manufacture
- Patent number 11,444,194
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lianjie Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240395929
- Publication date Nov 28, 2024
- United Microelectronics Corp.
- Chen-Yuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS
- Publication number 20240339446
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR FOR REDUCING HOT CARRIER DAMAGE AND METHODS...
- Publication number 20240274716
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hsin Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC
- Publication number 20240258373
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Yuan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...
- Publication number 20240250119
- Publication date Jul 25, 2024
- SANDISK TECHNOLOGIES LLC
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...
- Publication number 20230411519
- Publication date Dec 21, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH ENHANCED SAFE OPERATING AREA AND METHOD OF MANUFACTURE
- Publication number 20230395712
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lianjie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230387294
- Publication date Nov 30, 2023
- RENESAS ELECTRONICS CORPORATION
- Yotaro GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Transistor with Conductive Plate
- Publication number 20230378324
- Publication date Nov 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL TRANSISTOR DEVICE HAVING CONFORMAL LAYER
- Publication number 20230352580
- Publication date Nov 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas HAYNIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS
- Publication number 20230352554
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20230343870
- Publication date Oct 26, 2023
- DB HiTek Co., Ltd.
- Ho Jin YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20230335637
- Publication date Oct 19, 2023
- UNITED MICROELECTRONICS CORP.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20230335638
- Publication date Oct 19, 2023
- UNITED MICROELECTRONICS CORP.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...
- Publication number 20230320089
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED LDMOS WITH FIELD PLATE
- Publication number 20230317846
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Clint Alan Naquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230268437
- Publication date Aug 24, 2023
- UNITED MICROELECTRONICS CORP.
- Chih-Chien Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR WITH IMPLANT ALIGNMENT SPACERS
- Publication number 20230231034
- Publication date Jul 20, 2023
- NXP USA, Inc.
- Hernan Rueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...
- Publication number 20230145810
- Publication date May 11, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED OXIDE EDGING
- Publication number 20230135889
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230107025
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR DEVICE WITH LIGHTLY DOPED EXTENSION REGION
- Publication number 20230075374
- Publication date Mar 9, 2023
- Ralf Rudolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230061900
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HONG-SHYANG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230037410
- Publication date Feb 9, 2023
- United Microelectronics Corp.
- Chun-Ya Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH-RESISTANCE POLYSILICON RESISTOR FORM...
- Publication number 20220406771
- Publication date Dec 22, 2022
- KEY FOUNDRY CO., LTD.
- Heuiseung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH ENHANCED SAFE OPERATING AREA AND METHOD OF MANUFACTURE
- Publication number 20220384639
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lianjie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING AN INTEGRATED CIRCUIT WITH DRAIN WELL HAVING MULTI...
- Publication number 20220384646
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zheng Long CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Transistor With Implant Alignment Spacers
- Publication number 20220359727
- Publication date Nov 10, 2022
- NXP USA, Inc.
- Hernan Rueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...
- Publication number 20220277960
- Publication date Sep 1, 2022
- KEY FOUNDRY CO., LTD.
- Hee Hwan JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET TRANSISTORS WITH HYBRID CONTACT
- Publication number 20220254914
- Publication date Aug 11, 2022
- Amplexia, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS

with a step of forming an insulating sidewall spacer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Strained transistor with conductive plate

Semiconductor device with high-resistance polysilicon resistor form...

Method of making an integrated circuit with drain well having multi...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Integrated circuit with doped low-k sidewall spacers for gate stacks

LDMOS transistor with implant alignment spacers

Semiconductor device having conductive field plate overlapping an e...

Manufacturing method of high voltage semiconductor device

Semiconductor device and method for forming the same

Integrated circuit with drain well having multiple zones

High voltage semiconductor device and manufacturing method of high...

LDMOS with enhanced safe operating area and method of manufacture

Method of forming shield structure for backside through substrate v...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Integrated circuit with doped low-k side wall spacers for gate spacers

Semiconductor device with isolation layer

High voltage transistor structure and manufacturing method thereof

High voltage semiconductor device and manufacturing method thereof

LDMOS transistor with implant alignment spacers

MOSFET transistors with hybrid contact

LDMOS transistor with implant alignment spacers

LDMOS transistor and manufacture thereof

High voltage semiconductor device and manufacturing method of high...

Method of fabricating a field-effect transistor

Integrated circuit structure with metal gate and metal field plate...

Method of manufacturing a semiconductor device having a conductive...

Switching LDMOS device and method for making the same

Thin poly field plate design

Radio frequency (RF) amplifier device on silicon-on-insulator (SOI)...

LDMOS with enhanced safe operating area and method of manufacture

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS

FIELD EFFECT TRANSISTOR FOR REDUCING HOT CARRIER DAMAGE AND METHODS...

TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...

LDMOS WITH ENHANCED SAFE OPERATING AREA AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Strained Transistor with Conductive Plate

THREE-DIMENSIONAL TRANSISTOR DEVICE HAVING CONFORMAL LAYER

INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE

HIGH VOLTAGE SEMICONDUCTOR DEVICE

SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...

RUGGED LDMOS WITH FIELD PLATE

POWER DEVICE AND FABRICATION METHOD THEREOF

LDMOS TRANSISTOR WITH IMPLANT ALIGNMENT SPACERS

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...

INTEGRATED CIRCUIT DEVICE WITH IMPROVED OXIDE EDGING

SEMICONDUCTOR DEVICE

SEMICONDUCTOR-ON-INSULATOR DEVICE WITH LIGHTLY DOPED EXTENSION REGION

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

HIGH VOLTAGE TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH HIGH-RESISTANCE POLYSILICON RESISTOR FORM...

LDMOS WITH ENHANCED SAFE OPERATING AREA AND METHOD OF MANUFACTURE

METHOD OF MAKING AN INTEGRATED CIRCUIT WITH DRAIN WELL HAVING MULTI...

LDMOS Transistor With Implant Alignment Spacers

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...

MOSFET TRANSISTORS WITH HYBRID CONTACT