with a step of recessing the gate electrode

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CPC
H01L29/66704

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66704with a step of recessing the gate electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Laterally-diffused metal-oxide-semiconductor devices with an air gap
- Patent number 12,191,351
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,183,809
- Issue date Dec 31, 2024
- United Microelectronics Corp.
- Wei-Lun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 12,080,630
- Issue date Sep 3, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,068,411
- Issue date Aug 20, 2024
- Nissan Motor Co., Ltd.
- Toshiharu Marui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,046,671
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Che-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage extended-drain MOS (EDMOS) nanowire transistors
- Patent number 12,040,395
- Issue date Jul 16, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode extending into a shallow trench isolation structure...
- Patent number 12,040,397
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,973,108
- Issue date Apr 30, 2024
- Nissan Motor Co., Ltd.
- Wei Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,894,457
- Issue date Feb 6, 2024
- JOULWATT TECHNOLOGY CO., LTD.
- Weiwei Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,881,443
- Issue date Jan 23, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended drain field effect transistor with trench gate(s) and method
- Patent number 11,855,139
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor structure and method f...
- Patent number 11,830,932
- Issue date Nov 28, 2023
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Budong You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,777,002
- Issue date Oct 3, 2023
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,735,501
- Issue date Aug 22, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and associated fabricating method
- Patent number 11,721,758
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jia-Rui Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor device
- Patent number 11,705,506
- Issue date Jul 18, 2023
- Infineon Technologies Dresden GmbH & Co. KG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode extending into a shallow trench isolation structure...
- Patent number 11,705,515
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistors including vertical gates with multiple dielectric...
- Patent number 11,699,753
- Issue date Jul 11, 2023
- Maxim Integrated Products, Inc.
- Tom K. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,694,944
- Issue date Jul 4, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended transistor with trench gate
- Patent number 11,621,347
- Issue date Apr 4, 2023
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,616,004
- Issue date Mar 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,594,473
- Issue date Feb 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and formation method thereof
- Patent number 11,575,004
- Issue date Feb 7, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,557,674
- Issue date Jan 17, 2023
- Nissan Motor Co., Ltd.
- Toshiharu Marui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,476,181
- Issue date Oct 18, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device with vias and isolation layers
- Patent number 11,410,912
- Issue date Aug 9, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor formed with spacer
- Patent number 11,387,348
- Issue date Jul 12, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with extended drain region
- Patent number 11,329,156
- Issue date May 10, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistors including vertical gates with multiple dielectric...
- Patent number 11,316,044
- Issue date Apr 26, 2022
- Maxim Integrated Products, Inc.
- Tom K. Castro
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Dual-Thickness Active Area Architecture for SOI FETS
- Publication number 20240429239
- Publication date Dec 26, 2024
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE MOSFET
- Publication number 20240421224
- Publication date Dec 19, 2024
- NEXPERIA B.V.
- Jie Qi Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...
- Publication number 20240379502
- Publication date Nov 14, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE...
- Publication number 20240339533
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240339534
- Publication date Oct 10, 2024
- UNITED MICROELECTRONICS CORP.
- Che-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION
- Publication number 20240282853
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die with a Vertical Power Transistor Device
- Publication number 20240243130
- Publication date Jul 18, 2024
- Infineon Technologies Austria AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20240128165
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE NMOS TRANSISTOR AND TRENCH GATE PMOS TRANSISTOR MONOLIT...
- Publication number 20240113115
- Publication date Apr 4, 2024
- Infineon Technologies Austria AG
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Method of Manufacturing of a Semiconduct...
- Publication number 20240079494
- Publication date Mar 7, 2024
- NEXPERIA B.V.
- Manoj Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240055475
- Publication date Feb 15, 2024
- NISSAN MOTOR CO., LTD.
- Wei NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR STRUC...
- Publication number 20240030341
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20230420497
- Publication date Dec 28, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL ORIENTED METAL-OXIDE-SEMICONDUCTOR, MOS DEVICE COMPRISING A...
- Publication number 20230402541
- Publication date Dec 14, 2023
- NEXPERIA B.V.
- Manoj Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT, TRANSISTOR AND MEHTOD OF FABRICATING THE SAME
- Publication number 20230395673
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Cheng Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230343679
- Publication date Oct 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20230335640
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- JIA-RUI LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230326982
- Publication date Oct 12, 2023
- ARK SEMICONDUCTOR CORP. LTD.
- Chin-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230307454
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Honghai He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230307450
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE...
- Publication number 20230299196
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAA LDMOS STRUCTURE FOR HV OPERATION
- Publication number 20230275149
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Shyang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230253296
- Publication date Aug 10, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230231035
- Publication date Jul 20, 2023
- UNITED MICROELECTRONICS CORP.
- Wei-Lun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED DRAIN FIELD EFFECT TRANSISTOR WITH TRENCH GATE(S) AND METHOD
- Publication number 20230223437
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ESD PROTECTION DEVICE COMPRISING THE SAME
- Publication number 20230223473
- Publication date Jul 13, 2023
- NEXPERIA B.V.
- Chinmoy Khaund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230197573
- Publication date Jun 22, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230187547
- Publication date Jun 15, 2023
- UNITED MICROELECTRONICS CORP.
- Che-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230087787
- Publication date Mar 23, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20230059828
- Publication date Feb 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiang LIU
- H01 - BASIC ELECTRIC ELEMENTS

with a step of recessing the gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Laterally-diffused metal-oxide-semiconductor devices with an air gap

Manufacturing method of semiconductor device

3D semiconductor device and structure with metal layers and a conne...

Semiconductor device and method for manufacturing same

Semiconductor device and manufacturing method thereof

High voltage extended-drain MOS (EDMOS) nanowire transistors

Gate electrode extending into a shallow trench isolation structure...

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

3D semiconductor device and structure with metal layers and a conne...

Extended drain field effect transistor with trench gate(s) and method

Laterally diffused metal oxide semiconductor structure and method f...

Power device integration on a common substrate

Laterally-diffused metal-oxide semiconductor transistor and method...

3D semiconductor device and structure with metal layers and a conne...

Semiconductor structure and associated fabricating method

Lateral trench transistor device

Gate electrode extending into a shallow trench isolation structure...

LDMOS transistors including vertical gates with multiple dielectric...

3D semiconductor device and structure with metal layers and a conne...

Drain extended transistor with trench gate

3D semiconductor device and structure with metal layers and a conne...

3D semiconductor device and structure with metal layers and a conne...

Semiconductor structure and formation method thereof

Semiconductor device and method for manufacturing the same

3D semiconductor device and structure with metal layers

3D semiconductor device with vias and isolation layers

Transistor formed with spacer

Transistor with extended drain region

LDMOS transistors including vertical gates with multiple dielectric...

Patents Applicationslast 30 patents

Dual-Thickness Active Area Architecture for SOI FETS

SPLIT-GATE MOSFET

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...

GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION

Semiconductor Die with a Vertical Power Transistor Device

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

TRENCH GATE NMOS TRANSISTOR AND TRENCH GATE PMOS TRANSISTOR MONOLIT...

Semiconductor Device and a Method of Manufacturing of a Semiconduct...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HIGH PERFORMANCE LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR STRUC...

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

LATERAL ORIENTED METAL-OXIDE-SEMICONDUCTOR, MOS DEVICE COMPRISING A...

INTEGRATED CIRCUIT, TRANSISTOR AND MEHTOD OF FABRICATING THE SAME

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE...

GAA LDMOS STRUCTURE FOR HV OPERATION

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

EXTENDED DRAIN FIELD EFFECT TRANSISTOR WITH TRENCH GATE(S) AND METHOD

SEMICONDUCTOR DEVICE AND ESD PROTECTION DEVICE COMPRISING THE SAME

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

TRANSISTOR AND METHOD FOR MANUFACTURING SAME