with a step of recessing the source electrode

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H01L29/66696

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66696with a step of recessing the source electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Source contact formation of MOSFET with gate shield buffer for pitc...
- Patent number 12,230,707
- Issue date Feb 18, 2025
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection arrangements for integrated lateral diffusion field effe...
- Patent number 12,159,815
- Issue date Dec 3, 2024
- Silanna Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 12,113,106
- Issue date Oct 8, 2024
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source contact formation of MOSFET with gate shield buffer for pitc...
- Patent number 11,735,656
- Issue date Aug 22, 2023
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor device
- Patent number 11,705,506
- Issue date Jul 18, 2023
- Infineon Technologies Dresden GmbH & Co. KG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation layer
- Patent number 11,682,725
- Issue date Jun 20, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS device having an integrated current sensor and manufactur...
- Patent number 11,610,880
- Issue date Mar 21, 2023
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid semiconductor device
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- Issue date Jan 17, 2023
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
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- Issue date Dec 6, 2022
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection arrangements for integrated lateral diffusion field effe...
- Patent number 11,335,627
- Issue date May 17, 2022
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an LDMOS device having a well region below...
- Patent number 11,309,406
- Issue date Apr 19, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
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- Issue date Apr 12, 2022
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- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation layer and fabrication method th...
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- Issue date Dec 21, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device having reduced contact...
- Patent number 11,195,923
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- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a gradually increasing field dielec...
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- Issue date Jul 20, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor device
- Patent number 11,018,244
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS device having an integrated current sensor and manufactur...
- Patent number 10,943,896
- Issue date Mar 9, 2021
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device and method of manufacturing the same
- Patent number 10,910,477
- Issue date Feb 2, 2021
- Samsung Display Co., Ltd.
- Jongchan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a drift region
- Patent number 10,896,954
- Issue date Jan 19, 2021
- Semiconductor Components Industries, LLC
- Moshe Agam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
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- Issue date Dec 8, 2020
- Nissan Motor Co., Ltd.
- Wei Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra high voltage semiconductor device with electrostatic discharg...
- Patent number 10,840,371
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsai-Feng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source contact formation of MOSFET with gate shield buffer for pitc...
- Patent number 10,790,389
- Issue date Sep 29, 2020
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with metal filled deep source contact
- Patent number 10,707,344
- Issue date Jul 7, 2020
- Texas Instruments Incorporated
- Furen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a transistor including a first fiel...
- Patent number 10,629,690
- Issue date Apr 21, 2020
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a dielectric layer having a non-uniform...
- Patent number 10,593,774
- Issue date Mar 17, 2020
- Semiconductor Components Industries, LLC
- Gary H. Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device and method of manufacturing the same
- Patent number 10,593,770
- Issue date Mar 17, 2020
- Samsung Display Co., Ltd.
- Jongchan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon on insulator (FDSOI) lateral double-diffused...
- Patent number 10,497,803
- Issue date Dec 3, 2019
- GLOBALFOUNDRIES Inc.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicide layers
- Patent number 10,490,642
- Issue date Nov 26, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a gradually increasing field dielec...
- Patent number 10,483,360
- Issue date Nov 19, 2019
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...
- Publication number 20230335639
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- Silanna Asia Pte Ltd
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SEMICONDUCTOR DEVICE
- Publication number 20230115019
- Publication date Apr 13, 2023
- TEXAS INSTRUMENTS INCORPORATED
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE
- Publication number 20230054381
- Publication date Feb 23, 2023
- Amplexia, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...
- Publication number 20220278027
- Publication date Sep 1, 2022
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SEMICONDUCTOR DEVICE
- Publication number 20220209007
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE
- Publication number 20220181444
- Publication date Jun 9, 2022
- Silicet, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...
- Publication number 20220093749
- Publication date Mar 24, 2022
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION LAYER
- Publication number 20220029014
- Publication date Jan 27, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRENCH TRANSISTOR DEVICE
- Publication number 20210234023
- Publication date Jul 29, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOS DEVICE HAVING AN INTEGRATED CURRENT SENSOR AND MANUFACTUR...
- Publication number 20210183849
- Publication date Jun 17, 2021
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210175347
- Publication date Jun 10, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...
- Publication number 20200411685
- Publication date Dec 31, 2020
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE LDMOS SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD TH...
- Publication number 20200194583
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- AZ Power, Inc
- ZHENG ZUO
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DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200176576
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- SAMSUNG DISPLAY CO., LTD.
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CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...
- Publication number 20200144163
- Publication date May 7, 2020
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SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20200135918
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- Semiconductor Manufacturing International (Shanghai) Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
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- Publication number 20200127121
- Publication date Apr 23, 2020
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
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ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARG...
- Publication number 20200066902
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsai-Feng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...
- Publication number 20200058788
- Publication date Feb 20, 2020
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...
- Publication number 20200044036
- Publication date Feb 6, 2020
- INFINEON TECHNOLOGIES AG
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- H01 - BASIC ELECTRIC ELEMENTS
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POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20190245034
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- Silanna Asia Pte Ltd
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIELECTRIC-ISOLATED SOURCE AND DRAIN REGIONS
- Publication number 20190157424
- Publication date May 23, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONNECTION ARRANGEMENT FOR MINIMIZING CROSSTALK
- Publication number 20190157446
- Publication date May 23, 2019
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device Including a Drift Region
- Publication number 20190088554
- Publication date Mar 21, 2019
- Semiconductor Components Industries, LLC
- Moshe AGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY DEPLETED SILICON ON INSULATOR (FDSOI) LATERAL DOUBLE-DIFFUSED...
- Publication number 20190051747
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Ignasi CORTES MAYOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONNECTION ARRANGEMENT FOR MINIMIZING CROSSTALK
- Publication number 20180240904
- Publication date Aug 23, 2018
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...
- Publication number 20180212048
- Publication date Jul 26, 2018
- VISHAY-SILICONIX
- Wenjie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Silicide Layers
- Publication number 20180212031
- Publication date Jul 26, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS

with a step of recessing the source electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Source contact formation of MOSFET with gate shield buffer for pitc...

Connection arrangements for integrated lateral diffusion field effe...

LDMOS with self-aligned body and hybrid source

Power device integration on a common substrate

Source contact formation of MOSFET with gate shield buffer for pitc...

Lateral trench transistor device

Semiconductor device with isolation layer

Power MOS device having an integrated current sensor and manufactur...

Hybrid semiconductor device

LDMOS with self-aligned body and hybrid source

Connection arrangements for integrated lateral diffusion field effe...

Method of manufacturing an LDMOS device having a well region below...

Power device integration on a common substrate

Semiconductor device with isolation layer and fabrication method th...

Method of fabricating a semiconductor device having reduced contact...

Semiconductor device comprising a gradually increasing field dielec...

Lateral trench transistor device

Power MOS device having an integrated current sensor and manufactur...

Display device and method of manufacturing the same

Electronic device including a drift region

Semiconductor device and method of manufacturing the same

Ultra high voltage semiconductor device with electrostatic discharg...

Source contact formation of MOSFET with gate shield buffer for pitc...

Power MOSFET with metal filled deep source contact

Semiconductor device comprising a transistor including a first fiel...

Electronic device including a dielectric layer having a non-uniform...

Display device and method of manufacturing the same

Fully depleted silicon on insulator (FDSOI) lateral double-diffused...

Semiconductor device having silicide layers

Semiconductor device comprising a gradually increasing field dielec...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...

HYBRID SEMICONDUCTOR DEVICE

LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE

CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...

HYBRID SEMICONDUCTOR DEVICE

LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...

SEMICONDUCTOR DEVICE WITH ISOLATION LAYER

LATERAL TRENCH TRANSISTOR DEVICE

POWER MOS DEVICE HAVING AN INTEGRATED CURRENT SENSOR AND MANUFACTUR...

LDMOS DEVICE AND MANUFACTURING METHOD THEREOF

SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...

METAL SOURCE LDMOS SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD TH...

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

Lateral Trench Transistor Device

ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARG...

SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...

SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

TRANSISTORS WITH DIELECTRIC-ISOLATED SOURCE AND DRAIN REGIONS

INTEGRATED CIRCUIT CONNECTION ARRANGEMENT FOR MINIMIZING CROSSTALK

Electronic Device Including a Drift Region

FULLY DEPLETED SILICON ON INSULATOR (FDSOI) LATERAL DOUBLE-DIFFUSED...

INTEGRATED CIRCUIT CONNECTION ARRANGEMENT FOR MINIMIZING CROSSTALK

TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...

Semiconductor Device Having Silicide Layers