with a step of recessing the source electrode

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CPC
H01L29/66727

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66727with a step of recessing the source electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a super junction structure and super juncti...
- Patent number 12,040,358
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for manufacturing the same
- Patent number 12,034,073
- Issue date Jul 9, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for manufacturing the same
- Patent number 12,009,420
- Issue date Jun 11, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
And manufacture of self-aligned power devices
- Patent number 11,901,432
- Issue date Feb 13, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 11,894,445
- Issue date Feb 6, 2024
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistors and methods with low-voltage-drop shunt to body...
- Patent number 11,888,047
- Issue date Jan 30, 2024
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having elevated source regions and reces...
- Patent number 11,888,061
- Issue date Jan 30, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench power semiconductor devices having improved deep shield...
- Patent number 11,837,657
- Issue date Dec 5, 2023
- Wolfspeed, Inc.
- Naeem Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,777,025
- Issue date Oct 3, 2023
- Kabushika Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,757,033
- Issue date Sep 12, 2023
- Rohm Co., Ltd.
- Kengo Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 11,705,493
- Issue date Jul 18, 2023
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an alignment layer with mask pits
- Patent number 11,699,725
- Issue date Jul 11, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,652,072
- Issue date May 16, 2023
- Renesas Electronics Corporation
- Takashi Tonegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices including a trenched gate and methods o...
- Patent number 11,640,990
- Issue date May 2, 2023
- Wolfspeed, Inc.
- Daniel Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,640,982
- Issue date May 2, 2023
- Rohm Co., Ltd.
- Masatsugu Yutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical power MOSFET with channel including regions with di...
- Patent number 11,626,514
- Issue date Apr 11, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench power semiconductor devices having improved deep shield...
- Patent number 11,610,991
- Issue date Mar 21, 2023
- Wolfspeed, Inc.
- Naeem Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,557,672
- Issue date Jan 17, 2023
- Rohm Co., Ltd.
- Kengo Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 11,545,561
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, inverter circuit, drive device, vehicle, and...
- Patent number 11,495,665
- Issue date Nov 8, 2022
- Kabushiki Kaisha Toshiba
- Katsuhisa Tanaka
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Performance silicon carbide power devices
- Patent number 11,482,599
- Issue date Oct 25, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance silicon carbide power devices
- Patent number 11,482,598
- Issue date Oct 25, 2022
- GENESIC SEMICONDUCTOR INC.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 11,444,191
- Issue date Sep 13, 2022
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, inverter circuit, drive device, vehicle, and...
- Patent number 11,411,084
- Issue date Aug 9, 2022
- Kabushiki Kaisha Toshiba
- Katsuhisa Tanaka
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device, inverter circuit, drive device, vehicle, and...
- Patent number 11,398,556
- Issue date Jul 26, 2022
- Kabushiki Kaisha Toshiba
- Katsuhisa Tanaka
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 11,387,318
- Issue date Jul 12, 2022
- Fuji Electric Co., Ltd.
- Isamu Sugai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, transistor including the same, and method...
- Patent number 11,387,358
- Issue date Jul 12, 2022
- Samsung Electronics Co., Ltd.
- Younghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having integrated diodes
- Patent number 11,367,780
- Issue date Jun 21, 2022
- Infineon Technologies Austria AG
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED HYBRID TFET AND MOSFET
- Publication number 20240395814
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339507
- Publication date Oct 10, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR WITH SUPER JUNCTION STRUCTURE, AN...
- Publication number 20240290827
- Publication date Aug 29, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Pengcheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240204097
- Publication date Jun 20, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE
- Publication number 20240194754
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Weichun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240178316
- Publication date May 30, 2024
- Rohm Co., Ltd.
- Kentaro NASU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs
- Publication number 20240128348
- Publication date Apr 18, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SUPERJUNCTION DEVICE
- Publication number 20240128356
- Publication date Apr 18, 2024
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME
- Publication number 20240096962
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Junpei HISADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...
- Publication number 20240030300
- Publication date Jan 25, 2024
- STMicroelectronics S.r.l.
- Vincenzo ENEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240006528
- Publication date Jan 4, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240006492
- Publication date Jan 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Dong FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE FIELD EFFECT TRANSISTOR
- Publication number 20230411470
- Publication date Dec 21, 2023
- FORCE MOS TECHNOLOGY CO., LTD.
- Kao-Way TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230378344
- Publication date Nov 23, 2023
- Rohm Co., Ltd.
- Kengo OMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR AUTO-ALIGNED MANUFACTURING OF A TRENCH-GATE MOS TRANSIST...
- Publication number 20230268421
- Publication date Aug 24, 2023
- STMicroelectronics S.r.l.
- Vincenzo ENEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230261097
- Publication date Aug 17, 2023
- Fuji Electric Co., Ltd.
- Seiji NOGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES INCLUDING A TRENCHED GATE AND METHODS O...
- Publication number 20230231047
- Publication date Jul 20, 2023
- Wolfspeed, Inc.
- Daniel Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...
- Publication number 20230207686
- Publication date Jun 29, 2023
- Wolfspeed, Inc.
- Naeem Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230207687
- Publication date Jun 29, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230178646
- Publication date Jun 8, 2023
- RENESAS ELECTRONICS CORPORATION
- Yu NAGAHAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230111142
- Publication date Apr 13, 2023
- RENESAS ELECTRONICS CORPORATION
- Katsumi EIKYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING CONDUCTING PATH IN DOPED REGION, TRENCH-TY...
- Publication number 20230077336
- Publication date Mar 16, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230072989
- Publication date Mar 9, 2023
- Rohm Co., Ltd.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230044680
- Publication date Feb 9, 2023
- Rohm Co., Ltd.
- Kengo OMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE SILICON CARBIDE POWER DEVICES
- Publication number 20220367640
- Publication date Nov 17, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE SILICON CARBIDE POWER DEVICES
- Publication number 20220359664
- Publication date Nov 10, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SWITCHING DEVICE
- Publication number 20220336603
- Publication date Oct 20, 2022
- DENSO CORPORATION
- Eiji KAGOSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD T...
- Publication number 20220328658
- Publication date Oct 13, 2022
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- XIN YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Contact Trenches Extending from Opposit...
- Publication number 20220285550
- Publication date Sep 8, 2022
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BITS STORAGE IN POWER MOS (AND IGBT) AND SIMULTANEOUS READ ME...
- Publication number 20220208765
- Publication date Jun 30, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- G11 - INFORMATION STORAGE

with a step of recessing the source electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Trench field effect transistor structure comprising epitaxial layer...

Semiconductor device having contact trenches extending from opposit...

Method of manufacturing a super junction structure and super juncti...

Semiconductor device, and method for manufacturing the same

Semiconductor device, and method for manufacturing the same

And manufacture of self-aligned power devices

Method for producing a superjunction device

Lateral transistors and methods with low-voltage-drop shunt to body...

Power semiconductor device having elevated source regions and reces...

Gate trench power semiconductor devices having improved deep shield...

Semiconductor device

Semiconductor device and method of manufacturing the same

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Semiconductor device having an alignment layer with mask pits

Semiconductor device and method of manufacturing the same

Power semiconductor devices including a trenched gate and methods o...

Semiconductor device

Trench vertical power MOSFET with channel including regions with di...

Gate trench power semiconductor devices having improved deep shield...

Semiconductor device and method of manufacturing the same

Methods for manufacturing a MOSFET

Semiconductor device, inverter circuit, drive device, vehicle, and...

Performance silicon carbide power devices

Performance silicon carbide power devices

Integrated channel diode

Semiconductor device, inverter circuit, drive device, vehicle, and...

Semiconductor device, inverter circuit, drive device, vehicle, and...

Semiconductor device and method of manufacturing a semiconductor de...

Semiconductor structure, transistor including the same, and method...

Semiconductor device having integrated diodes

Patents Applicationslast 30 patents

STACKED HYBRID TFET AND MOSFET

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR WITH SUPER JUNCTION STRUCTURE, AN...

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE

SEMICONDUCTOR DEVICE

DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs

METHOD FOR PRODUCING A SUPERJUNCTION DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME

METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

TRENCH-GATE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR AUTO-ALIGNED MANUFACTURING OF A TRENCH-GATE MOS TRANSIST...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

POWER SEMICONDUCTOR DEVICES INCLUDING A TRENCHED GATE AND METHODS O...

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING CONDUCTING PATH IN DOPED REGION, TRENCH-TY...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PERFORMANCE SILICON CARBIDE POWER DEVICES

PERFORMANCE SILICON CARBIDE POWER DEVICES

METHOD FOR MANUFACTURING SWITCHING DEVICE

TRENCH FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD T...

Semiconductor Device Having Contact Trenches Extending from Opposit...

MULTI-BITS STORAGE IN POWER MOS (AND IGBT) AND SIMULTANEOUS READ ME...