with a substrate comprising an insulating layer

Industry

CPC
H01L29/7812

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7812with a substrate comprising an insulating layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,107,159
- Issue date Oct 1, 2024
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,646,368
- Issue date May 9, 2023
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with recessed access t...
- Patent number 11,605,733
- Issue date Mar 14, 2023
- NANYA TECHNOLOGY CORPORATION
- Tsung-Yu Tsai
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical diamond MOSFET and method of making the same
- Patent number 11,569,375
- Issue date Jan 31, 2023
- HRL Laboratories, LLC
- Biqin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator structure comprising a buried high resis...
- Patent number 11,508,612
- Issue date Nov 22, 2022
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with recessed access transistor and method of...
- Patent number 11,469,319
- Issue date Oct 11, 2022
- NANYA TECHNOLOGY CORPORATION
- Tsung-Yu Tsai
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure, transistor including the same, and method...
- Patent number 11,387,358
- Issue date Jul 12, 2022
- Samsung Electronics Co., Ltd.
- Younghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical isolated gate field effect transistor integrated in a semi...
- Patent number 11,121,086
- Issue date Sep 14, 2021
- Imec VZW
- Gaspard Hiblot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and alternator using the same
- Patent number 11,049,965
- Issue date Jun 29, 2021
- Hitachi Power Semiconductor Device, Ltd.
- Masaki Shiraishi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Lateral MOSFET with dielectric isolation trench
- Patent number 11,024,732
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,770,581
- Issue date Sep 8, 2020
- Fuji Electric Co., Ltd.
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,770,582
- Issue date Sep 8, 2020
- Fuji Electric Co., Ltd.
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor wafer including a porous lay...
- Patent number 10,714,377
- Issue date Jul 14, 2020
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having an SOI island
- Patent number 10,658,457
- Issue date May 19, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator structure comprising a buried high resis...
- Patent number 10,622,247
- Issue date Apr 14, 2020
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with dielectric isolation trench
- Patent number 10,516,045
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with thinned substrate
- Patent number 10,431,598
- Issue date Oct 1, 2019
- QUALCOMM Incorporated
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried insulator regions and methods of formation thereof
- Patent number 10,410,911
- Issue date Sep 10, 2019
- Infineon Technologies AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having N and P-doped pillar regions
- Patent number 10,374,032
- Issue date Aug 6, 2019
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET and power conversion circuit
- Patent number 10,290,734
- Issue date May 14, 2019
- Shindengen Electric Manufacturing Co., Ltd.
- Daisuke Arai
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
SOI island in a power semiconductor device
- Patent number 10,256,299
- Issue date Apr 9, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-sided vertical semiconductor device with thinned substrate
- Patent number 10,079,230
- Issue date Sep 18, 2018
- QUALCOMM Incorporated
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a conductive electrode
- Patent number 9,831,334
- Issue date Nov 28, 2017
- Semiconductor Components Industries, LLC
- Gary H. Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate
- Patent number 9,716,107
- Issue date Jul 25, 2017
- Shin-Etsu Chemical Co., Ltd.
- Makoto Kawai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral MOSFET with dielectric isolation trench
- Patent number 9,704,983
- Issue date Jul 11, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with thinned substrate
- Patent number 9,673,219
- Issue date Jun 6, 2017
- QUALCOMM Incorporated
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power device having low specific on-resistance and using hi...
- Patent number 9,324,855
- Issue date Apr 26, 2016
- University of Electronic Science and Technology of China
- Junhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-sided vertical semiconductor device with thinned substrate
- Patent number 9,159,825
- Issue date Oct 13, 2015
- Silanna Semiconductor U.S.A., Inc.
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with dielectric isolation trench
- Patent number 9,136,158
- Issue date Sep 15, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related fabrication methods
- Patent number 9,000,518
- Issue date Apr 7, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...
- Publication number 20230395701
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220310539
- Publication date Sep 29, 2022
- Kabushiki Kaisha Toshiba
- Yoshiharu TAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220293785
- Publication date Sep 15, 2022
- Kabushiki Kaisha Toshiba
- Yusuke KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH RECESSED ACCESS T...
- Publication number 20220130994
- Publication date Apr 28, 2022
- NANYA TECHNOLOGY CORPORATION
- TSUNG-YU TSAI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF AND ELECTRONI...
- Publication number 20210328053
- Publication date Oct 21, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DIAMOND MOSFET AND METHOD OF MAKING THE SAME
- Publication number 20210328052
- Publication date Oct 21, 2021
- HRL LABORATORIES, LLC
- Biqin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH RECESSED ACCESS TRANSISTOR AND METHOD OF...
- Publication number 20210320201
- Publication date Oct 14, 2021
- NANYA TECHNOLOGY CORPORATION
- TSUNG-YU TSAI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE, TRANSISTOR INCLUDING THE SAME, AND METHOD...
- Publication number 20210151595
- Publication date May 20, 2021
- Samsung Electronics Co., Ltd.
- Younghwan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ISOLATED GATE FIELD EFFECT TRANSISTOR INTEGRATED IN A SEMI...
- Publication number 20200203276
- Publication date Jun 25, 2020
- IMEC vzw
- Gaspard Hiblot
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A BURIED HIGH RESIS...
- Publication number 20200126846
- Publication date Apr 23, 2020
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MOSFET with Dielectric Isolation Trench
- Publication number 20200119186
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE
- Publication number 20190386026
- Publication date Dec 19, 2019
- QUALCOMM Incorporated
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having an SOI Island
- Publication number 20190198612
- Publication date Jun 27, 2019
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET AND POWER CONVERSION CIRCUIT
- Publication number 20190081172
- Publication date Mar 14, 2019
- Shindengen Electric Manufacturing Co., Ltd.
- Daisuke ARAI
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE AND ALTERNATOR USING THE SAME
- Publication number 20190043984
- Publication date Feb 7, 2019
- Hitachi Power Semiconductor Device, Ltd.
- Masaki SHIRAISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device and a Manufacturing Method Therefor
- Publication number 20180294333
- Publication date Oct 11, 2018
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Insulator Regions and Methods of Formation Thereof
- Publication number 20180166324
- Publication date Jun 14, 2018
- INFINEON TECHNOLOGIES AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI Island in a Power Semiconductor Device
- Publication number 20180053822
- Publication date Feb 22, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MOSFET with Dielectric Isolation Trench
- Publication number 20170309742
- Publication date Oct 26, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE
- Publication number 20170243887
- Publication date Aug 24, 2017
- QUALCOMM Incorporated
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double-Sided Vertical Semiconductor Device With Thinned Substrate
- Publication number 20160358910
- Publication date Dec 8, 2016
- QUALCOMM Incorporated
- Michael Andrew Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A CONDUCTIVE ELECTRODE
- Publication number 20160315185
- Publication date Oct 27, 2016
- Semiconductor Components Industries, LLC
- Gary H. Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MOSFET with Dielectric Isolation Trench
- Publication number 20160005855
- Publication date Jan 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-SIDED VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE
- Publication number 20150364597
- Publication date Dec 17, 2015
- Silanna Semiconductor U.S.A., Inc.
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER DEVICE HAVING LOW SPECIFIC ON-RESISTANCE AND USING HI...
- Publication number 20150333170
- Publication date Nov 19, 2015
- Junhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Semiconductor Device with Thinned Substrate
- Publication number 20150102401
- Publication date Apr 16, 2015
- Silanna Semiconductor U.S.A., Inc.
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20140235025
- Publication date Aug 21, 2014
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20140070312
- Publication date Mar 13, 2014
- Freescale Semiconductor, Inc.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR...
- Publication number 20130328063
- Publication date Dec 12, 2013
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MOSFET with Dielectric Isolation Trench
- Publication number 20130234247
- Publication date Sep 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS

with a substrate comprising an insulating layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Method of manufacturing semiconductor device with recessed access t...

Vertical diamond MOSFET and method of making the same

Semiconductor on insulator structure comprising a buried high resis...

Semiconductor device with recessed access transistor and method of...

Semiconductor structure, transistor including the same, and method...

Vertical isolated gate field effect transistor integrated in a semi...

Semiconductor device and alternator using the same

Lateral MOSFET with dielectric isolation trench

Semiconductor device

Semiconductor device

Semiconductor device and semiconductor wafer including a porous lay...

Power semiconductor device having an SOI island

Semiconductor on insulator structure comprising a buried high resis...

Lateral MOSFET with dielectric isolation trench

Vertical semiconductor device with thinned substrate

Buried insulator regions and methods of formation thereof

Field-effect semiconductor device having N and P-doped pillar regions

MOSFET and power conversion circuit

SOI island in a power semiconductor device

Double-sided vertical semiconductor device with thinned substrate

Electronic device including a conductive electrode

Composite substrate

Lateral MOSFET with dielectric isolation trench

Vertical semiconductor device with thinned substrate

Lateral power device having low specific on-resistance and using hi...

Double-sided vertical semiconductor device with thinned substrate

Lateral MOSFET with dielectric isolation trench

Semiconductor device and related fabrication methods

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH RECESSED ACCESS T...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF AND ELECTRONI...

VERTICAL DIAMOND MOSFET AND METHOD OF MAKING THE SAME

SEMICONDUCTOR DEVICE WITH RECESSED ACCESS TRANSISTOR AND METHOD OF...

SEMICONDUCTOR STRUCTURE, TRANSISTOR INCLUDING THE SAME, AND METHOD...

VERTICAL ISOLATED GATE FIELD EFFECT TRANSISTOR INTEGRATED IN A SEMI...

SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A BURIED HIGH RESIS...

Lateral MOSFET with Dielectric Isolation Trench

VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE

Power Semiconductor Device Having an SOI Island

MOSFET AND POWER CONVERSION CIRCUIT

SEMICONDUCTOR DEVICE AND ALTERNATOR USING THE SAME

Field-Effect Semiconductor Device and a Manufacturing Method Therefor

Buried Insulator Regions and Methods of Formation Thereof

SOI Island in a Power Semiconductor Device

Lateral MOSFET with Dielectric Isolation Trench

VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE

Double-Sided Vertical Semiconductor Device With Thinned Substrate

ELECTRONIC DEVICE INCLUDING A CONDUCTIVE ELECTRODE

Lateral MOSFET with Dielectric Isolation Trench

DOUBLE-SIDED VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE

LATERAL POWER DEVICE HAVING LOW SPECIFIC ON-RESISTANCE AND USING HI...

Vertical Semiconductor Device with Thinned Substrate

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR...

Lateral MOSFET with Dielectric Isolation Trench