with an active layer made of a group 13/15 material

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H01L29/66522

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66522with an active layer made of a group 13/15 material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure
- Patent number 12,272,755
- Issue date Apr 8, 2025
- Mediatek Inc.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,272,746
- Issue date Apr 8, 2025
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing nitride semiconductor device and nitride s...
- Patent number 12,237,379
- Issue date Feb 25, 2025
- Fuji Electric Co., Ltd.
- Ryo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,034,068
- Issue date Jul 9, 2024
- Soitec Belgium
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 12,027,607
- Issue date Jul 2, 2024
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,996,447
- Issue date May 28, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,990,530
- Issue date May 21, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,978,734
- Issue date May 7, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for etch depth control in III-V semiconductor dev...
- Patent number 11,948,801
- Issue date Apr 2, 2024
- NEXGEN POWER SYSTEMS, INC.
- Wayne Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor device and method of fabrication
- Patent number 11,942,537
- Issue date Mar 26, 2024
- Odyssey Semiconductor, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
- Patent number 11,929,435
- Issue date Mar 12, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,923,460
- Issue date Mar 5, 2024
- Mediatek Inc.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistors
- Patent number 11,862,715
- Issue date Jan 2, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-flexible transparent semiconductor film and preparation metho...
- Patent number 11,854,802
- Issue date Dec 26, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF...
- Yukun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
- Patent number 11,777,024
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,756,998
- Issue date Sep 12, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure having drain stressor, source stress...
- Patent number 11,757,038
- Issue date Sep 12, 2023
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- G11 - INFORMATION STORAGE
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,742,409
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with reduced subthreshold swing
- Patent number 11,735,658
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,735,670
- Issue date Aug 22, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for regrown source contacts for vertical gallium nitride bas...
- Patent number 11,728,415
- Issue date Aug 15, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 11,721,770
- Issue date Aug 8, 2023
- United Microelectronics Corp.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric transistors and assemblies comprising ferroelectric t...
- Patent number 11,715,797
- Issue date Aug 1, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method
- Patent number 11,710,780
- Issue date Jul 25, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiyang Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL
- Publication number 20240332285
- Publication date Oct 3, 2024
- Intel Corporation
- Sukru Yemenicioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240313089
- Publication date Sep 19, 2024
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240266169
- Publication date Aug 8, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR ETCH DEPTH CONTROL IN III-V SEMICONDUCTOR DEV...
- Publication number 20240242969
- Publication date Jul 18, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Wayne CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR, AND METHOD OF PRODUCTION
- Publication number 20240234571
- Publication date Jul 11, 2024
- ROBERT BOSCH GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...
- Publication number 20240222440
- Publication date Jul 4, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20240213363
- Publication date Jun 27, 2024
- Odyssey Semiconductor, Inc.
- James R. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240170580
- Publication date May 23, 2024
- MEDIATEK INC.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240105767
- Publication date Mar 28, 2024
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20240055520
- Publication date Feb 15, 2024
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRENCH MOSFET AND FABRICATION METHOD
- Publication number 20240021724
- Publication date Jan 18, 2024
- Sixpoint Materials, Inc.
- TADAO HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A TRANSISTOR WITH A HIGH DEGREE OF ELECTRON MO...
- Publication number 20230420542
- Publication date Dec 28, 2023
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Elke MEISSNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE BASED FETS WITH REGROWN SOURCE CONTACTS
- Publication number 20230420547
- Publication date Dec 28, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20230387289
- Publication date Nov 30, 2023
- Odyssey Semiconductor, Inc.
- James R. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20230369488
- Publication date Nov 16, 2023
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric Transistors and Assemblies Comprising Ferroelectric T...
- Publication number 20230327019
- Publication date Oct 12, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR BODY-INDUCED BODY LEAKAGE MITIGATION AT LOW TEMPERATURE
- Publication number 20230317851
- Publication date Oct 5, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20230282728
- Publication date Sep 7, 2023
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20230127978
- Publication date Apr 27, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230123907
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230080688
- Publication date Mar 16, 2023
- MEDIATEK INC.
- Po-Chao TSAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230047815
- Publication date Feb 16, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC GATE STACK FOR BAND-TO-BAND TUNNELING REDUCTION
- Publication number 20230006065
- Publication date Jan 5, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE FORMATION THEREOF
- Publication number 20220367713
- Publication date Nov 17, 2022
- ROBERT BOSCH GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220336680
- Publication date Oct 20, 2022
- MEDIATEK INC.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS

with an active layer made of a group 13/15 material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure

Semiconductor device

Semiconductor device, method of manufacturing the same and electron...

Method for manufacturing nitride semiconductor device and nitride s...

Notch shape of trench gate bottom corner for better breakdown volta...

Double-channel HEMT device and manufacturing method thereof

Semiconductor structure, HEMT structure and method of forming the same

Method of fabricating super-junction based vertical gallium nitride...

High electron mobility transistor

Methods for GAA I/O formation by selective epi regrowth

Field effect transistors with gate electrode self-aligned to semico...

Replacement-channel fabrication of III-V nanosheet devices

Semiconductor structure and method of forming the same

Method and system for etch depth control in III-V semiconductor dev...

Vertical field effect transistor device and method of fabrication

Ferroelectric gate stack for band-to-band tunneling reduction

Semiconductor structure

Vertical tunneling field-effect transistors

Super-flexible transparent semiconductor film and preparation metho...

Method of fabricating super-junction based vertical gallium nitride...

Nitride semiconductor device and fabrication method therefor

Source-channel junction for III-V metal-oxide-semiconductor field e...

Semiconductor memory structure having drain stressor, source stress...

Replacement-channel fabrication of III-V nanosheet devices

Tunnel field-effect transistor with reduced subthreshold swing

Non-selective epitaxial source/drain deposition to reduce dopant di...

Method for regrown source contacts for vertical gallium nitride bas...

Manufacturing method of semiconductor device

Ferroelectric transistors and assemblies comprising ferroelectric t...

Semiconductor device fabrication method

Patents Applicationslast 30 patents

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

POWER SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD AND SYSTEM FOR ETCH DEPTH CONTROL IN III-V SEMICONDUCTOR DEV...

FIELD-EFFECT TRANSISTOR, AND METHOD OF PRODUCTION

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...

VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION

SEMICONDUCTOR STRUCTURE

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

GaN TRENCH MOSFET AND FABRICATION METHOD

METHOD FOR PRODUCING A TRANSISTOR WITH A HIGH DEGREE OF ELECTRON MO...

VERTICAL GALLIUM NITRIDE BASED FETS WITH REGROWN SOURCE CONTACTS

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...

Ferroelectric Transistors and Assemblies Comprising Ferroelectric T...

TRANSISTOR BODY-INDUCED BODY LEAKAGE MITIGATION AT LOW TEMPERATURE

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

FERROELECTRIC GATE STACK FOR BAND-TO-BAND TUNNELING REDUCTION

VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE FORMATION THEREOF

SEMICONDUCTOR STRUCTURE