with an active layer made of a group 13/15 material

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CPC
H01L29/66446

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66446with an active layer made of a group 13/15 material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nano transistors with source/drain having side contacts to 2-D mate...
- Patent number 11,955,527
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and inverter
- Patent number 11,688,777
- Issue date Jun 27, 2023
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 11,495,694
- Issue date Nov 8, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing thin film transistor and thin film transistor
- Patent number 11,309,401
- Issue date Apr 19, 2022
- WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Tianyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 11,276,574
- Issue date Mar 15, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunnel field-effect transistor with U-shaped gate and band...
- Patent number 11,245,011
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiun-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method for producing same
- Patent number 11,127,863
- Issue date Sep 21, 2021
- Forschungsverbund Berlin e.V.
- Konstantin Osipov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High switching frequency, low loss and small form factor fully inte...
- Patent number 10,943,898
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Xin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 10,840,098
- Issue date Nov 17, 2020
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased source and drain contact edge width in two-dimensional ma...
- Patent number 10,741,681
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered vertical field effect transistor and methods of fabrication
- Patent number 10,629,720
- Issue date Apr 21, 2020
- Quanzhong Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased source and drain contact edge width in two-dimensional ma...
- Patent number 10,580,886
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
INP-based transistor fabrication
- Patent number 10,541,315
- Issue date Jan 21, 2020
- Purdue Research Foundation
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High switching frequency, low loss and small form factor fully inte...
- Patent number 10,535,650
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Xin Zhang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 10,515,805
- Issue date Dec 24, 2019
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field effect transistor with self-aligned gate
- Patent number 10,461,164
- Issue date Oct 29, 2019
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a multiple channe...
- Patent number 10,418,472
- Issue date Sep 17, 2019
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,411,098
- Issue date Sep 10, 2019
- Nuvoton Technology Corporation
- Chih-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with regrown contacts and methods of fabrication
- Patent number 10,403,718
- Issue date Sep 3, 2019
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor structure and process for fabricating...
- Patent number 10,388,752
- Issue date Aug 20, 2019
- Elta Systems Ltd.
- Joseph Kaplun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure and extension formation for III-V nFET
- Patent number 10,361,307
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for in-situ etch and regrowth in gallium nitride...
- Patent number 10,319,829
- Issue date Jun 11, 2019
- NEXGEN POWER SYSTEMS, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Long channels for transistors
- Patent number 10,312,326
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gallium nitride JFET with controlled doping profile
- Patent number 10,312,378
- Issue date Jun 4, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 10,290,713
- Issue date May 14, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device and semiconductor device
- Patent number 10,256,100
- Issue date Apr 9, 2019
- RENESAS ELECTRONICS CORPORATION
- Tomohiro Hirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electrical device
- Patent number 10,243,058
- Issue date Mar 26, 2019
- Kabushiki Kaisha Toshiba
- Toshiya Yonehara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having insulator pillars and semiconductor...
- Patent number 10,199,220
- Issue date Feb 5, 2019
- GLOBALFOUNDRIES Inc.
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device and manufacturing method thereof
- Patent number 10,181,514
- Issue date Jan 15, 2019
- Fuji Electric Co., Ltd.
- Hideaki Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous crystalline gallium nitride (GaN) PN structure with no i...
- Patent number 10,177,247
- Issue date Jan 8, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...
- Publication number 20230387235
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230369460
- Publication date Nov 16, 2023
- United Microelectronics Corp.
- Kuang-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A LATERAL TRANSISTOR DEVICE AND AN INVE...
- Publication number 20230317804
- Publication date Oct 5, 2023
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20230106300
- Publication date Apr 6, 2023
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CONTROL OF SIDEWALL ORIENTATION IN VERTICAL G...
- Publication number 20220328688
- Publication date Oct 13, 2022
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20220157606
- Publication date May 19, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nano Transistors with Source/Drain Having Side Contacts to 2-D Mate...
- Publication number 20220140098
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR WITH U-SHAPED GATE AND BAND...
- Publication number 20220123110
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiun-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20220013671
- Publication date Jan 13, 2022
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR
- Publication number 20210328040
- Publication date Oct 21, 2021
- Wuhan China Star Optoelectronics Semiconductor Display Techology Co., Ltd.
- Tianyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Inverter
- Publication number 20210134968
- Publication date May 6, 2021
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20210043456
- Publication date Feb 11, 2021
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20200161133
- Publication date May 21, 2020
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASED SOURCE AND DRAIN CONTACT EDGE WIDTH IN TWO-DIMENSIONAL MA...
- Publication number 20200144406
- Publication date May 7, 2020
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR WITH U-SHAPED GATE AND BAND...
- Publication number 20200098867
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiun-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD FOR PRODUCING SAME
- Publication number 20200066919
- Publication date Feb 27, 2020
- FORSCHUNGSVERBUND BERLIN E.V.
- Konstantin OSIPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SWITCHING FREQUENCY, LOW LOSS AND SMALL FORM FACTOR FULLY INTE...
- Publication number 20200058639
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Xin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASED SOURCE AND DRAIN CONTACT EDGE WIDTH IN TWO-DIMENSIONAL MA...
- Publication number 20190371925
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED VERTICAL FIELD EFFECT TRANSISTOR AND METHODS OF FABRICATION
- Publication number 20190334024
- Publication date Oct 31, 2019
- Quanzhong JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNELS FOR TRANSISTORS
- Publication number 20190252497
- Publication date Aug 15, 2019
- International Business Machines Corporation
- ROBIN HSIN KUO CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SWITCHING FREQUENCY, LOW LOSS AND SMALL FORM FACTOR FULLY INTE...
- Publication number 20190244955
- Publication date Aug 8, 2019
- International Business Machines Corporation
- Xin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION
- Publication number 20190206998
- Publication date Jul 4, 2019
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNELS FOR TRANSISTORS
- Publication number 20190189748
- Publication date Jun 20, 2019
- International Business Machines Corporation
- ROBIN HSIN KUO CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190035896
- Publication date Jan 31, 2019
- Nuvoton Technology Corporation
- Chih-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20190035895
- Publication date Jan 31, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE AND PROCESS FOR FABRICATING...
- Publication number 20180366558
- Publication date Dec 20, 2018
- ELTA SYSTEMS LTD.
- Joseph KAPLUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE
- Publication number 20180337242
- Publication date Nov 22, 2018
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20180277371
- Publication date Sep 27, 2018
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO I...
- Publication number 20180212045
- Publication date Jul 26, 2018
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20180190789
- Publication date Jul 5, 2018
- Nexgen Power Systems, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS

with an active layer made of a group 13/15 material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nano transistors with source/drain having side contacts to 2-D mate...

Semiconductor device and inverter

GaN vertical-channel junction field-effect transistors with regrown...

Method for manufacturing thin film transistor and thin film transistor

Semiconductor power device and method for producing same

Vertical tunnel field-effect transistor with U-shaped gate and band...

Gate structure and method for producing same

High switching frequency, low loss and small form factor fully inte...

Semiconductor power device and method for producing same

Increased source and drain contact edge width in two-dimensional ma...

Layered vertical field effect transistor and methods of fabrication

Increased source and drain contact edge width in two-dimensional ma...

INP-based transistor fabrication

High switching frequency, low loss and small form factor fully inte...

Semiconductor power device and method for producing same

Compound semiconductor field effect transistor with self-aligned gate

Process of forming an electronic device including a multiple channe...

Semiconductor device and manufacturing method thereof

Semiconductor devices with regrown contacts and methods of fabrication

Gallium nitride semiconductor structure and process for fabricating...

Contact structure and extension formation for III-V nFET

Method and system for in-situ etch and regrowth in gallium nitride...

Long channels for transistors

Lateral gallium nitride JFET with controlled doping profile

Field-effect transistor

Manufacturing method of semiconductor device and semiconductor device

Semiconductor device and electrical device

Semiconductor structure having insulator pillars and semiconductor...

Vertical semiconductor device and manufacturing method thereof

Continuous crystalline gallium nitride (GaN) PN structure with no i...

Patents Applicationslast 30 patents

NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A LATERAL TRANSISTOR DEVICE AND AN INVE...

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

METHOD AND SYSTEM FOR CONTROL OF SIDEWALL ORIENTATION IN VERTICAL G...

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

Nano Transistors with Source/Drain Having Side Contacts to 2-D Mate...

VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR WITH U-SHAPED GATE AND BAND...

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR

Semiconductor Device and Inverter

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

INCREASED SOURCE AND DRAIN CONTACT EDGE WIDTH IN TWO-DIMENSIONAL MA...

VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR WITH U-SHAPED GATE AND BAND...

GATE STRUCTURE AND METHOD FOR PRODUCING SAME

HIGH SWITCHING FREQUENCY, LOW LOSS AND SMALL FORM FACTOR FULLY INTE...

INCREASED SOURCE AND DRAIN CONTACT EDGE WIDTH IN TWO-DIMENSIONAL MA...

LAYERED VERTICAL FIELD EFFECT TRANSISTOR AND METHODS OF FABRICATION

LONG CHANNELS FOR TRANSISTORS

HIGH SWITCHING FREQUENCY, LOW LOSS AND SMALL FORM FACTOR FULLY INTE...

SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

LONG CHANNELS FOR TRANSISTORS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIELD-EFFECT TRANSISTOR

GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE AND PROCESS FOR FABRICATING...

COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO I...

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...