with an edge termination structure

Industry

CPC
H01L29/7823

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7823with an edge termination structure

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power MOSFETs structure
- Patent number 11,967,645
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yogendra Yadav
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for preparing same
- Patent number 11,923,453
- Issue date Mar 5, 2024
- CSMC Technologies Fab2 Co., Ltd.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,916,116
- Issue date Feb 27, 2024
- Sanken Electric Co., Ltd.
- Hironori Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plate structure to enhance transistor breakdown voltage
- Patent number 11,916,115
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral homogenization field high voltage power semiconductor d...
- Patent number 11,888,022
- Issue date Jan 30, 2024
- University of Electronic Science and Technology of China
- Wentong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion metal-oxide semiconductor device
- Patent number 11,881,527
- Issue date Jan 23, 2024
- United Microelectronics Corp.
- Ling-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor
- Patent number 11,855,202
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for silicon carbide integrated power MOSFETs on a single...
- Patent number 11,798,938
- Issue date Oct 24, 2023
- CoolCAD Electronics, LLC
- Neil Goldsman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased isolation breakdown voltage
- Patent number 11,756,992
- Issue date Sep 12, 2023
- KEY FOUNDRY CO., LTD.
- Yon Sup Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,742,422
- Issue date Aug 29, 2023
- Macronix International Co., Ltd.
- Shuo-Lun Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor device and method for...
- Patent number 11,742,206
- Issue date Aug 29, 2023
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Budong You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 11,742,396
- Issue date Aug 29, 2023
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for forming the same
- Patent number 11,688,805
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for eliminating divot formation and semiconductor device man...
- Patent number 11,670,689
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Wen Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFETs integrated with clamped diodes having trench field p...
- Patent number 11,600,725
- Issue date Mar 7, 2023
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination structures for semiconductor devices
- Patent number 11,600,724
- Issue date Mar 7, 2023
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with oxide liner in drift region
- Patent number 11,552,183
- Issue date Jan 10, 2023
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with metal gate and metal field plate...
- Patent number 11,532,742
- Issue date Dec 20, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power device with self-aligned field plate
- Patent number 11,355,596
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFETs integrated with clamped diodes having trench field p...
- Patent number 11,329,155
- Issue date May 10, 2022
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising getter layers and methods of makin...
- Patent number 11,315,845
- Issue date Apr 26, 2022
- Monolith Semiconductor, Inc.
- Kevin Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide gap semiconductor device
- Patent number 11,309,415
- Issue date Apr 19, 2022
- Shindengen Electric Manufacturing Co., Ltd.
- Shunichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET and JBSFET cell topologies with superior high frequenc...
- Patent number 11,276,779
- Issue date Mar 15, 2022
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,257,943
- Issue date Feb 22, 2022
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor arrangement and method of producing thereof
- Patent number 11,245,002
- Issue date Feb 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench with different transverse cross-sectional widths
- Patent number 11,217,675
- Issue date Jan 4, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS having reduced lateral size
- Patent number 11,205,722
- Issue date Dec 21, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 11,171,215
- Issue date Nov 9, 2021
- Silanna Asia Pte Ltd
- Stuart B. Molin
- G01 - MEASURING TESTING
Information Patent Grant
Lateral MOSFET with buried drain extension layer
- Patent number 11,152,459
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with diode coupled isolation ring
- Patent number 11,127,856
- Issue date Sep 21, 2021
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL DIFFUSION METAL-OXIDE SEMICONDUCTOR DEVICE
- Publication number 20240120419
- Publication date Apr 11, 2024
- UNITED MICROELECTRONICS CORP.
- Ling-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE
- Publication number 20240105838
- Publication date Mar 28, 2024
- KEY FOUNDRY CO., LTD.
- Tae Hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION METAL-OXIDE SEMICONDUCTOR DEVICE
- Publication number 20240105839
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Ling-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240055516
- Publication date Feb 15, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Qiong WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20240047577
- Publication date Feb 8, 2024
- Semiconductor Components Industries, LLC
- Arash ELHAMI KHORASANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240014318
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE
- Publication number 20230378286
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INCREASED ISOLATION BREAKDOWN VOLTAGE
- Publication number 20230369391
- Publication date Nov 16, 2023
- KEY FOUNDRY CO., LTD.
- Yon Sup PANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT USING ADAPTIVELY BIASED SHIELD PLATE
- Publication number 20230369421
- Publication date Nov 16, 2023
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL TRANSISTOR DEVICE HAVING CONFORMAL LAYER
- Publication number 20230352580
- Publication date Nov 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas HAYNIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20230343870
- Publication date Oct 26, 2023
- DB HiTek Co., Ltd.
- Ho Jin YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES
- Publication number 20230317775
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei SADOVNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED LDMOS WITH FIELD PLATE
- Publication number 20230317846
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Clint Alan Naquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20230282742
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MAN...
- Publication number 20230275131
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Wen TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCOTR DEVICE
- Publication number 20230238434
- Publication date Jul 27, 2023
- Sanken Electric Co., Ltd
- Hironori AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20230178650
- Publication date Jun 8, 2023
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20230170417
- Publication date Jun 1, 2023
- DB HiTek Co., Ltd.
- Ji Ye PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230081508
- Publication date Mar 16, 2023
- Macronix International Co., Ltd.
- Shuo-Lun Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...
- Publication number 20230053369
- Publication date Feb 23, 2023
- University of Electronic Science and Technology of China
- Wentong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION METAL-OXIDE SEMICONDUCTOR DEVICE
- Publication number 20230052714
- Publication date Feb 16, 2023
- UNITED MICROELECTRONICS CORP.
- Ling-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220384642
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220376040
- Publication date Nov 24, 2022
- RENESAS ELECTRONICS CORPORATION
- Makoto KOSHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MAN...
- Publication number 20220359671
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Wen TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220320333
- Publication date Oct 6, 2022
- KEY FOUNDRY CO., LTD.
- Hanseob CHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH METAL GATE AND METAL FIELD PLATE...
- Publication number 20220302306
- Publication date Sep 22, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND METHOD FOR PREPARING SAME
- Publication number 20220262948
- Publication date Aug 18, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...
- Publication number 20220231167
- Publication date Jul 21, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR SILICON CARBIDE INTEGRATED POWER MOSFETS ON A SINGLE...
- Publication number 20220115373
- Publication date Apr 14, 2022
- CoolCAD Electronics, LLC
- Neil GOLDSMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20220093791
- Publication date Mar 24, 2022
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS

with an edge termination structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power MOSFETs structure

LDMOS device and method for preparing same

Semiconductor device

Field plate structure to enhance transistor breakdown voltage

SOI lateral homogenization field high voltage power semiconductor d...

Lateral diffusion metal-oxide semiconductor device

LDMOS transistor

Structure for silicon carbide integrated power MOSFETs on a single...

Semiconductor device with increased isolation breakdown voltage

Semiconductor device and method of fabricating the same

Laterally diffused metal oxide semiconductor device and method for...

Threshold voltage adjustment using adaptively biased shield plate

Integrated circuit structure and method for forming the same

Method for eliminating divot formation and semiconductor device man...

Trench MOSFETs integrated with clamped diodes having trench field p...

Edge termination structures for semiconductor devices

Transistors with oxide liner in drift region

Integrated circuit structure with metal gate and metal field plate...

High power device with self-aligned field plate

Trench MOSFETs integrated with clamped diodes having trench field p...

Semiconductor devices comprising getter layers and methods of makin...

Wide gap semiconductor device

Power MOSFET and JBSFET cell topologies with superior high frequenc...

Semiconductor device

Superjunction transistor arrangement and method of producing thereof

Trench with different transverse cross-sectional widths

Lateral DMOS having reduced lateral size

Threshold voltage adjustment using adaptively biased shield plate

Lateral MOSFET with buried drain extension layer

LDMOS with diode coupled isolation ring

Patents Applicationslast 30 patents

LATERAL DIFFUSION METAL-OXIDE SEMICONDUCTOR DEVICE

HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE

LATERAL DIFFUSION METAL-OXIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR...

LDMOS TRANSISTOR AND METHOD OF FORMING THE SAME

FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE

SEMICONDUCTOR DEVICE WITH INCREASED ISOLATION BREAKDOWN VOLTAGE

THRESHOLD VOLTAGE ADJUSTMENT USING ADAPTIVELY BIASED SHIELD PLATE

THREE-DIMENSIONAL TRANSISTOR DEVICE HAVING CONFORMAL LAYER

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES

RUGGED LDMOS WITH FIELD PLATE

INTEGRATED CIRCUIT STRUCTURE

METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MAN...

SEMICONDUCOTR DEVICE

EDGE TERMINATION STRUCTURES FOR SEMICONDUCTOR DEVICES

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...

LATERAL DIFFUSION METAL-OXIDE SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE

METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MAN...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT STRUCTURE WITH METAL GATE AND METAL FIELD PLATE...

LDMOS DEVICE AND METHOD FOR PREPARING SAME

TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...

STRUCTURE FOR SILICON CARBIDE INTEGRATED POWER MOSFETS ON A SINGLE...

EDGE TERMINATION STRUCTURES FOR SEMICONDUCTOR DEVICES