with asymmetrical source and drain regions

Industry

CPC
H01L29/7835

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7835with asymmetrical source and drain regions

Industries

Patents Grantslast 30 patents

Information Patent Grant
Diffused field-effect transistor
- Patent number 12,154,972
- Issue date Nov 26, 2024
- NEXCHIP SEMICONDUCTOR CORPORATION
- Menghui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 12,132,108
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor device including LDD region and manufactur...
- Patent number 12,125,909
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Jongsung Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,107,148
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Hung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 12,100,740
- Issue date Sep 24, 2024
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with complementary drain extende...
- Patent number 12,094,970
- Issue date Sep 17, 2024
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure
- Patent number 12,087,635
- Issue date Sep 10, 2024
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in a level shifter with electrostatic discharg...
- Patent number 12,057,442
- Issue date Aug 6, 2024
- MagnaChip Semiconductor, Ltd.
- Kyong Jin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source and drain structures in semiconductor devices
- Patent number 12,057,503
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gated field effect transistor structure having shielded s...
- Patent number 12,027,622
- Issue date Jul 2, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Xiaoli Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated assemblies having transistors configur...
- Patent number 12,027,621
- Issue date Jul 2, 2024
- Micron Technology, Inc.
- Zia A. Shafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon, nitrogen and/or fluorine co-implants for low resistance tra...
- Patent number 12,015,057
- Issue date Jun 18, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,015,082
- Issue date Jun 18, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device
- Patent number 11,990,474
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Fang Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped region between gate and drain
- Patent number 11,978,797
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lian-Jie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-based power semiconductor device having increased current carry...
- Patent number 11,973,114
- Issue date Apr 30, 2024
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,973,108
- Issue date Apr 30, 2024
- Nissan Motor Co., Ltd.
- Wei Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFETs structure
- Patent number 11,967,645
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yogendra Yadav
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HVMOS reliability evaluation using bulk resistances as indices
- Patent number 11,955,389
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having asymmetric threshold voltage and buck converter
- Patent number 11,936,299
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,935,950
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,929,433
- Issue date Mar 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,929,432
- Issue date Mar 12, 2024
- Lapis Semiconductor Co., Ltd.
- Kazuya Uda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switch device
- Patent number 11,929,434
- Issue date Mar 12, 2024
- eMemory Technology Inc.
- Chih-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices with asymmetrical floating gates
- Patent number 11,901,425
- Issue date Feb 13, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Series connected stacked vertical transistors for high voltage appl...
- Patent number 11,901,449
- Issue date Feb 13, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 11,894,459
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,894,439
- Issue date Feb 6, 2024
- United Microelectronics Corp.
- Heng-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended-drain metal-oxide-semiconductor devices with a silicon-ger...
- Patent number 11,888,062
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Felix Holzmüller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SNAPBACK ELECTROSTATIC DISCHARGE (ESD) CIRCUIT, SYSTEM AND METHOD O...
- Publication number 20240395799
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387689
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Structures For Semiconductor Devices
- Publication number 20240387726
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMOELECTRIC COOLING OF SEMICONDUCTOR DEVICES
- Publication number 20240379746
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source and Drain Structures in Semiconductor Devices
- Publication number 20240363749
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-SOURCE STRUCTURE AND MANUFACTURING METHOD THEREOF, AND ASYMMET...
- Publication number 20240355925
- Publication date Oct 24, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Yanggang Ou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240322043
- Publication date Sep 26, 2024
- POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- WOOYEOL MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...
- Publication number 20240290844
- Publication date Aug 29, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies having Transistors Configured for High-Voltag...
- Publication number 20240282858
- Publication date Aug 22, 2024
- Micron Technology, Inc.
- Zia A. Shafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-Based Power Semiconductor Device Having Increased Current Carry...
- Publication number 20240282821
- Publication date Aug 22, 2024
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20240266436
- Publication date Aug 8, 2024
- DB HiTek Co., Ltd.
- Nam Kyu KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED INSULATING STRUCTURE SET
- Publication number 20240266435
- Publication date Aug 8, 2024
- UNITED MICROELECTRONICS CORP.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240258309
- Publication date Aug 1, 2024
- Fuji Electric Co., Ltd.
- Takahide TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN
- Publication number 20240250170
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lian-Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDMOS AND FABRICATING METHOD OF THE SAME
- Publication number 20240234572
- Publication date Jul 11, 2024
- UNITED MICROELECTRONICS CORP.
- Liang-An Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...
- Publication number 20240223087
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu Fu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Transistor Structure
- Publication number 20240186412
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS
- Publication number 20240178318
- Publication date May 30, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Martin B. Mollat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240120405
- Publication date Apr 11, 2024
- UNITED MICROELECTRONICS CORP.
- Heng-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGER...
- Publication number 20240113190
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20240097026
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20240096975
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HONG-SHYANG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
- Publication number 20240072178
- Publication date Feb 29, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE PICKUP DEVICE AND METHOD OF TRACKING SUBJECT THEREOF
- Publication number 20240069412
- Publication date Feb 29, 2024
- Maxell, Ltd.
- Hiroshi SHIMIZU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...
- Publication number 20240061320
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240055475
- Publication date Feb 15, 2024
- NISSAN MOTOR CO., LTD.
- Wei NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS
- Publication number 20240047387
- Publication date Feb 8, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH HYBRID GATE DIELECTRIC STRUCTURE AND ASYM...
- Publication number 20240030343
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Saloni Chaurasia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240014318
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS

with asymmetrical source and drain regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Diffused field-effect transistor

Dual gate structures for semiconductor devices

Asymmetric semiconductor device including LDD region and manufactur...

Semiconductor devices and methods of manufacturing thereof

Threshold voltage adjustment using adaptively biased shield plate

Electrostatic discharge guard ring with complementary drain extende...

Transistor structure

Semiconductor device in a level shifter with electrostatic discharg...

Asymmetric source and drain structures in semiconductor devices

DEPFET transistor and method of manufacturing a DEPFET transistor

Insulated gated field effect transistor structure having shielded s...

Method of forming integrated assemblies having transistors configur...

Carbon, nitrogen and/or fluorine co-implants for low resistance tra...

DEPFET transistor and method of manufacturing a DEPFET transistor

Method of making a semiconductor device

Semiconductor device with doped region between gate and drain

MOS-based power semiconductor device having increased current carry...

Semiconductor device and manufacturing method thereof

Power MOSFETs structure

HVMOS reliability evaluation using bulk resistances as indices

Transistor having asymmetric threshold voltage and buck converter

High voltage transistor structure

Asymmetric FET for FDSOI devices

Semiconductor device

High voltage switch device

Non-volatile memory devices with asymmetrical floating gates

Series connected stacked vertical transistors for high voltage appl...

Dual gate structures for semiconductor devices

Semiconductor device

Extended-drain metal-oxide-semiconductor devices with a silicon-ger...

Patents Applicationslast 30 patents

SNAPBACK ELECTROSTATIC DISCHARGE (ESD) CIRCUIT, SYSTEM AND METHOD O...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Dual Gate Structures For Semiconductor Devices

THERMOELECTRIC COOLING OF SEMICONDUCTOR DEVICES

Asymmetric Source and Drain Structures in Semiconductor Devices

GATE-SOURCE STRUCTURE AND MANUFACTURING METHOD THEREOF, AND ASYMMET...

INTEGRATED CIRCUIT DEVICE

DEPFET TRANSISTOR

CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...

Integrated Assemblies having Transistors Configured for High-Voltag...

MOS-Based Power Semiconductor Device Having Increased Current Carry...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

TRANSISTOR WITH EMBEDDED INSULATING STRUCTURE SET

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN

EDMOS AND FABRICATING METHOD OF THE SAME

METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...

High Voltage Transistor Structure

LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS

SEMICONDUCTOR DEVICE

WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGER...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

IMAGE PICKUP DEVICE AND METHOD OF TRACKING SUBJECT THEREOF

DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS

TRANSISTOR STRUCTURE WITH HYBRID GATE DIELECTRIC STRUCTURE AND ASYM...

LDMOS TRANSISTOR AND METHOD OF FORMING THE SAME