with at least one additional gate

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CPC
H01L29/42344

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42344with at least one additional gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor storage device with improved cutoff characteristics
- Patent number 12,211,913
- Issue date Jan 28, 2025
- Kioxia Corporation
- Yoshiro Shimojo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device having a subtrate with...
- Patent number 12,207,460
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Tomohiro Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,206,008
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having memory cell strings and separate read and writ...
- Patent number 12,200,928
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and semiconductor device
- Patent number 12,185,547
- Issue date Dec 31, 2024
- Kioxia Corporation
- Takanobu Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed signal neuromorphic computing with nonvolatile memory devices
- Patent number 12,106,211
- Issue date Oct 1, 2024
- The Regents of the University of California
- Dmitri Strukov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 12,089,410
- Issue date Sep 10, 2024
- Kioxia Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,058,856
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 12,029,041
- Issue date Jul 2, 2024
- Infineon Technologies LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming top select gate trenches
- Patent number 12,021,126
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 12,009,401
- Issue date Jun 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 12,004,350
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Euntaek Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including first structure having peripheral circuit and seco...
- Patent number 11,990,450
- Issue date May 21, 2024
- Samsung Electronics Co., Ltd.
- Eunji Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,984,484
- Issue date May 14, 2024
- Kioxia Corporation
- Tomonori Kajino
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,978,772
- Issue date May 7, 2024
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 11,968,836
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Younghwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and electronic systems including the same
- Patent number 11,967,623
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Sunggil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon-oxide-nitride-oxide-silicon (SONOS) memo...
- Patent number 11,956,966
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Chia-Ching Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof
- Patent number 11,955,565
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Chun-Sung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods including a method of forming a stack and isotropically etc...
- Patent number 11,948,639
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- John D. Hopkins
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate memory with control gate having nonplanar top surface
- Patent number 11,943,920
- Issue date Mar 26, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,427
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET and memory cell having improved drain current through back b...
- Patent number 11,908,899
- Issue date Feb 20, 2024
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor devices
- Patent number 11,910,607
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device with reduced variat...
- Patent number 11,894,447
- Issue date Feb 6, 2024
- Lapis Semiconductor Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device including a memory cell
- Patent number 11,888,041
- Issue date Jan 30, 2024
- Kioxia Corporation
- Megumi Ishiduki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistors and memories having multi-gate transistors
- Patent number 11,848,053
- Issue date Dec 19, 2023
- Micron Technology, Inc.
- Vladimir Mikhalev
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,844,214
- Issue date Dec 12, 2023
- Samsung Electronics Co., Ltd.
- Jaeryong Sim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-digitated capacitor in flash technology
- Patent number 11,832,448
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY AND CORRESPONDING MANUFACTURING METHOD
- Publication number 20250006267
- Publication date Jan 2, 2025
- STMicroelectronics International N.V.
- Radouane Habhab
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240397721
- Publication date Nov 28, 2024
- KIOXIA Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240365542
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Cheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECO...
- Publication number 20240282753
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- Eunji KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
- Publication number 20240237353
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Younghwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240213339
- Publication date Jun 27, 2024
- KIOXIA Corporation
- Tomonori KAJINO
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON MEMORY CELL
- Publication number 20240215251
- Publication date Jun 27, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Ching Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Comprising Strings Of Memory Cells And Methods Includi...
- Publication number 20240203496
- Publication date Jun 20, 2024
- Micron Technology, Inc.
- John D. Hopkins
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...
- Publication number 20240206183
- Publication date Jun 20, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240194797
- Publication date Jun 13, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Sung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240170551
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL
- Publication number 20240120395
- Publication date Apr 11, 2024
- KIOXIA Corporation
- Megumi ISHIDUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC...
- Publication number 20240021219
- Publication date Jan 18, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURIN...
- Publication number 20240008276
- Publication date Jan 4, 2024
- KIOXIA Corporation
- Yoshiaki FUKUZUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20240008277
- Publication date Jan 4, 2024
- KIOXIA Corporation
- Takanobu ONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20240008279
- Publication date Jan 4, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
- Publication number 20240008274
- Publication date Jan 4, 2024
- Samsung Electronics Co., Ltd.
- Jiwon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT, TRANSISTOR AND MEHTOD OF FABRICATING THE SAME
- Publication number 20230395673
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Cheng Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230380155
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230363167
- Publication date Nov 9, 2023
- KIOXIA Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE BRIDGE STRUCTURES FOR WORD LINE CONTACTS IN THREE-DIMENSI...
- Publication number 20230335170
- Publication date Oct 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang TANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- Publication number 20230317607
- Publication date Oct 5, 2023
- Samsung Electronics Co., Ltd.
- Jungtae SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE INCLUDING SUPPORT STRUCTURES AND CONTACT STRUCTURES H...
- Publication number 20230290739
- Publication date Sep 14, 2023
- Micron Technology, Inc.
- Shuangqiang Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230290845
- Publication date Sep 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING PILLARS INCLUDING A MEMORY MATERIAL, A...
- Publication number 20230276624
- Publication date Aug 31, 2023
- Micron Technology, Inc.
- Pankaj Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230268400
- Publication date Aug 24, 2023
- RENESAS ELECTRONICS CORPORATION
- Yoshiyuki KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230262974
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- ShihKuang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH DIVIDED DRAIN SELECT GATE LINE...
- Publication number 20230189521
- Publication date Jun 15, 2023
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS

with at least one additional gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor storage device with improved cutoff characteristics

Method of manufacturing semiconductor device having a subtrate with...

Semiconductor device

Memory device having memory cell strings and separate read and writ...

Semiconductor substrate and semiconductor device

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Mixed signal neuromorphic computing with nonvolatile memory devices

Semiconductor memory device and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Method of forming high-voltage transistor with thin gate poly

Method of forming top select gate trenches

Memory transistor with multiple charge storing layers and a high wo...

Three-dimensional semiconductor memory devices

Device including first structure having peripheral circuit and seco...

Semiconductor memory device

Method of manufacturing semiconductor device

Three-dimensional semiconductor memory devices

Semiconductor devices and electronic systems including the same

Method for forming silicon-oxide-nitride-oxide-silicon (SONOS) memo...

Semiconductor memory device and fabrication method thereof

Methods including a method of forming a stack and isotropically etc...

Split gate memory with control gate having nonplanar top surface

Semiconductor device

MOSFET and memory cell having improved drain current through back b...

Three-dimensional semiconductor devices

Method for manufacturing a semiconductor device with reduced variat...

Nonvolatile semiconductor memory device including a memory cell

Multi-gate transistors and memories having multi-gate transistors

Semiconductor device and method of manufacturing the same

Inter-digitated capacitor in flash technology

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY AND CORRESPONDING MANUFACTURING METHOD

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

METHOD OF FORMING TOP SELECT GATE TRENCHES

DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECO...

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

SEMICONDUCTOR MEMORY DEVICE

SILICON-OXIDE-NITRIDE-OXIDE-SILICON MEMORY CELL

Memory Array Comprising Strings Of Memory Cells And Methods Includi...

HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL

MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURIN...

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

Method of Forming High-Voltage Transistor with Thin Gate Poly

INTEGRATED CIRCUIT DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

INTEGRATED CIRCUIT, TRANSISTOR AND MEHTOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

STAIRCASE BRIDGE STRUCTURES FOR WORD LINE CONTACTS IN THREE-DIMENSI...

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

MEMORY DEVICE INCLUDING SUPPORT STRUCTURES AND CONTACT STRUCTURES H...

SPLIT GATE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

ELECTRONIC DEVICES INCLUDING PILLARS INCLUDING A MEMORY MATERIAL, A...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH DIVIDED DRAIN SELECT GATE LINE...