with at least one step of making a bit line

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H01L27/10885

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/10885with at least one step of making a bit line

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,676,820
- Issue date Jun 13, 2023
- SK Hynix Inc.
- Oh-Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...
- Patent number 11,672,110
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a landing area extends from first po...
- Patent number 11,665,887
- Issue date May 30, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Wei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having spacer capping pattern disposed...
- Patent number 11,665,883
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Inkyoung Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 11,647,627
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Jiseok Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having a channel provided on a memory unit
- Patent number 11,647,625
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Jaeho Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM and manufacturing method therefore
- Patent number 11,641,731
- Issue date May 2, 2023
- Winbond Electronics Corp.
- Shu-Mei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-containing layer for bit line resistance reduction
- Patent number 11,637,107
- Issue date Apr 25, 2023
- Applied Materials, Inc.
- Tom Ho Wing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device using different crystallinities in stor...
- Patent number 11,631,677
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Daeyoung Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for smoothing dynamic random access memory bi...
- Patent number 11,631,680
- Issue date Apr 18, 2023
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,626,408
- Issue date Apr 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Shuai Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method of manufacturing the same, and...
- Patent number 11,626,498
- Issue date Apr 11, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-containing layer for bit line resistance reduction
- Patent number 11,626,410
- Issue date Apr 11, 2023
- Applied Materials, Inc.
- Tom Ho Wing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a transistor and a capacitor along a common horizont...
- Patent number 11,626,406
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Fredrick D. Fishburn
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 11,626,411
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Jiyoung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and methods of forming semiconductor devices
- Patent number 11,610,896
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Daeik Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device using multipe photolitho...
- Patent number 11,610,898
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Hyun-Chul Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with covering liners and method for fabricatin...
- Patent number 11,610,811
- Issue date Mar 21, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory and method for manufacturing the dram...
- Patent number 11,610,611
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Ting-Ting Ke
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming semiconductor memory device comprises a bit line...
- Patent number 11,600,622
- Issue date Mar 7, 2023
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure
- Patent number 11,594,540
- Issue date Feb 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Lu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-d dram cell with mechanical stability
- Patent number 11,594,537
- Issue date Feb 28, 2023
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,594,538
- Issue date Feb 28, 2023
- Samsung Electronics Co., Ltd.
- Sang Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D DRAM structures and methods of manufacture
- Patent number 11,587,930
- Issue date Feb 21, 2023
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,587,932
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Byoung Deog Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor memory device with air gaps betw...
- Patent number 11,587,934
- Issue date Feb 21, 2023
- NANYA TECHNOLOGY CORPORATION
- Chun-Cheng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacturing the same
- Patent number 11,574,912
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Augustin Jinwoo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with protruding contact
- Patent number 11,574,911
- Issue date Feb 7, 2023
- NANYA TECHNOLOGY CORPORATION
- Chiang-Lin Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device including capacitor str...
- Patent number 11,574,914
- Issue date Feb 7, 2023
- NANYA TECHNOLOGY CORPORATION
- Jar-Ming Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including wiring contact plugs
- Patent number 11,569,171
- Issue date Jan 31, 2023
- Samsung Electronics Co., Ltd.
- Yonghyeok Son
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240188275
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- He Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240179889
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Chien-Ming Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240179891
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Hung-Yu WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240172414
- Publication date May 23, 2024
- NANYA TECHNOLOGY CORPORATION
- Jen-I LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical FinFet Formation Using Directional Deposition
- Publication number 20240172419
- Publication date May 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING 3D MEMORY STRUCTURE
- Publication number 20240121939
- Publication date Apr 11, 2024
- NANYA TECHNOLOGY CORPORATION
- SHIH-FAN KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR CHANNEL LAYER AND METHOD...
- Publication number 20240107744
- Publication date Mar 28, 2024
- NANYA TECHNOLOGY CORPORATION
- Hsih-Yang CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY
- Publication number 20240098965
- Publication date Mar 21, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE STRUCTURE AND METHOD FOR MANUFACTU...
- Publication number 20240090193
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- Chung-Peng HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240081043
- Publication date Mar 7, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS...
- Publication number 20240074142
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BONDING STRUCTURE AND METHOD OF MANUFAC...
- Publication number 20240074145
- Publication date Feb 29, 2024
- NANYA TECHNOLOGY CORPORATION
- YI-JEN LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240057315
- Publication date Feb 15, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20240049444
- Publication date Feb 8, 2024
- Changxin Memory Technologies, Inc.
- Kang YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROEL...
- Publication number 20240038588
- Publication date Feb 1, 2024
- Micron Technology, Inc.
- Terrence B. McDaniel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240040773
- Publication date Feb 1, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Changfu Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME
- Publication number 20240032283
- Publication date Jan 25, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ETCHED LANDING PAD SURFACE
- Publication number 20240023307
- Publication date Jan 18, 2024
- NANYA TECHNOLOGY CORPORATION
- YEN-HO CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240023317
- Publication date Jan 18, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guangsu SHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240023310
- Publication date Jan 18, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Min LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240015952
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE HAVING AIR GAP
- Publication number 20240008261
- Publication date Jan 4, 2024
- NANYA TECHNOLOGY CORPORATION
- Lu-Wei CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE...
- Publication number 20240008247
- Publication date Jan 4, 2024
- Changxin Memory Technologies, Inc.
- Xiaojie LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH VANADIUM-CONTAINING SPACERS AND METHOD FO...
- Publication number 20240008262
- Publication date Jan 4, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND FORMING METHOD THEREOF
- Publication number 20230422474
- Publication date Dec 28, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20230422466
- Publication date Dec 28, 2023
- Changxin Memory Technologies, Inc.
- Deyuan XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING MEMORY DEVICE WITH MULTILAYERED CAPACITOR DIEL...
- Publication number 20230413509
- Publication date Dec 21, 2023
- NANYA TECHNOLOGY CORPORATION
- CHIH-HSIUNG HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND FORMING METHOD THEREOF
- Publication number 20230413512
- Publication date Dec 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTO...
- Publication number 20230413520
- Publication date Dec 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH VOID-FREE CONDUCTIV...
- Publication number 20230413533
- Publication date Dec 21, 2023
- NANYA TECHNOLOGY CORPORATION
- CHENG-YAN JI
- H01 - BASIC ELECTRIC ELEMENTS

with at least one step of making a bit line

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method for fabricating the same

Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...

Semiconductor structure having a landing area extends from first po...

Semiconductor memory device having spacer capping pattern disposed...

Integrated circuit device

Memory device having a channel provided on a memory unit

DRAM and manufacturing method therefore

Silicon-containing layer for bit line resistance reduction

Semiconductor memory device using different crystallinities in stor...

Methods and apparatus for smoothing dynamic random access memory bi...

Memory device and forming method thereof

Semiconductor memory device, method of manufacturing the same, and...

Silicon-containing layer for bit line resistance reduction

Devices having a transistor and a capacitor along a common horizont...

Semiconductor memory device and method of fabricating the same

Semiconductor devices and methods of forming semiconductor devices

Method of fabricating semiconductor device using multipe photolitho...

Semiconductor device with covering liners and method for fabricatin...

Dynamic random access memory and method for manufacturing the dram...

Method of forming semiconductor memory device comprises a bit line...

Method for manufacturing semiconductor structure

3-d dram cell with mechanical stability

Semiconductor device and method of fabricating the same

3-D DRAM structures and methods of manufacture

Method for fabricating semiconductor device

Method for preparing semiconductor memory device with air gaps betw...

Memory devices and methods of manufacturing the same

Method for fabricating semiconductor device with protruding contact

Method for fabricating semiconductor device including capacitor str...

Semiconductor memory device including wiring contact plugs

Patents Applicationslast 30 patents

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Vertical FinFet Formation Using Directional Deposition

SEMICONDUCTOR DEVICE INCLUDING 3D MEMORY STRUCTURE

SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR CHANNEL LAYER AND METHOD...

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

SEMICONDUCTOR DEVICE HAVING GATE STRUCTURE AND METHOD FOR MANUFACTU...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MICROELECTRONIC DEVICES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS...

SEMICONDUCTOR DEVICE HAVING BONDING STRUCTURE AND METHOD OF MANUFAC...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROEL...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME

SEMICONDUCTOR DEVICE WITH ETCHED LANDING PAD SURFACE

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND FORMING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE HAVING AIR GAP

SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE...

SEMICONDUCTOR DEVICE WITH VANADIUM-CONTAINING SPACERS AND METHOD FO...

MEMORY AND FORMING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

METHOD FOR PREPARING MEMORY DEVICE WITH MULTILAYERED CAPACITOR DIEL...

MEMORY AND FORMING METHOD THEREOF

MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTO...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH VOID-FREE CONDUCTIV...