Patent Application
20240038588
Embodiments disclosed herein relate to microelectronic devices and microelectronic device fabrication. More particularly, embodiments of the disclosure relate to methods of forming microelectronic devices including self-aligned contact structures, and to related microelectronic devices, memory devices, and electronic systems.
Microelectronic device designers often desire to increase the level of integration or density of features within a microelectronic device by reducing the dimensions of the individual features and by reducing the separation distance between neighboring features. In addition, microelectronic device designers often desire to design architectures that are not only compact, but offer performance advantages, as well as simplified designs.
A relatively common microelectronic device is a memory device. A memory device may include a memory array having a number of memory cells arranged in a grid pattern. One type of memory cell is a dynamic random access memory (DRAM). In the simplest design configuration, a DRAM cell includes one access device, such as a transistor, and one storage device, such as a capacitor. Modern applications for memory devices can utilize vast numbers of DRAM unit cells, arranged in an array of rows and columns. The DRAM cells are electrically accessible through digit lines and word lines arranged along the rows and columns of the array.
Reducing the dimensions and spacing of memory device features places ever increasing demands on the methods used to form the memory device features. For example, DRAM device manufacturers face a tremendous challenge on reducing the DRAM cell area as feature spacing decreases to accommodate increased feature density. Conventional approaches to reducing spacing between neighboring digit lines often reduce margin for error (e.g., alignment errors), and can result in undesirable shorts and/or undesirable capacitive coupling effects without complex and time-consuming feature alignment methodologies.
The following description provides specific details, such as material types, material thicknesses, and process conditions in order to provide a thorough description of embodiments described herein. However, a person of ordinary skill in the art will understand that the embodiments disclosed herein may be practiced without employing these specific details. Indeed, the embodiments may be practiced in conjunction with conventional fabrication techniques employed in the semiconductor industry. In addition, the description provided herein does not form a complete description of a microelectronic device or a complete process flow for manufacturing the microelectronic device and the structures described below do not form a complete microelectronic device. Only those process acts and structures necessary to understand the embodiments described herein are described in detail below. Additional acts to form a complete microelectronic device may be performed by conventional techniques.
Drawings presented herein are for illustrative purposes only, and are not meant to be actual views of any particular material, component, structure, microelectronic device, or microelectronic system. Variations from the shapes depicted in the drawings as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein are not to be construed as being limited to the particular shapes or regions as illustrated, but include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as box-shaped may have rough and/or nonlinear features, and a region illustrated or described as round may include some rough and/or linear features. Moreover, sharp angles that are illustrated may be rounded, and vice versa. Thus, the regions illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of a region and do not limit the scope of the present claims. The drawings are not necessarily to scale. Additionally, elements common between figures may retain the same numerical designation.
As used herein, the singular forms of the terms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
As used herein, the terms “about” or “approximately” in reference to a numerical value for a particular parameter is inclusive of the numerical value and a degree of variance from the numerical value that one of ordinary skill in the art would understand is within acceptable tolerances for the particular parameter. For example, “about” or “approximately” in reference to a numerical value may include additional numerical values within a range of from 90.0 percent to 110.0 percent of the numerical value, such as within a range of from 95.0 percent to 105.0 percent of the numerical value, within a range of from 97.5 percent to 102.5 percent of the numerical value, within a range of from 99.0 percent to 101.0 percent of the numerical value, within a range of from 99.5 percent to 100.5 percent of the numerical value, or within a range of from 99.9 percent to 100.1 percent of the numerical value.
As used herein, spatially relative terms, such as “beneath,” “below,” “lower,” “bottom,” “above,” “upper,” “top,” “front,” “rear,” “left,” “right,” and the like, may be used for ease of description to describe one element's or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Unless otherwise specified, the spatially relative terms are intended to encompass different orientations of the materials in addition to the orientation depicted in the figures. For example, if materials in the figures are inverted, elements described as “below” or “beneath” or “under” or “on bottom of” other elements or features would then be oriented “above” or “on top of” the other elements or features. Thus, the term “below” can encompass both an orientation of above and below, depending on the context in which the term is used, which will be evident to one of ordinary skill in the art. The materials may be otherwise oriented (e.g., rotated 90 degrees, inverted, flipped) and the spatially relative descriptors used herein interpreted accordingly.
As used herein, the term “configured” refers to a size, shape, material composition, and arrangement of one or more of at least one structure and at least one apparatus facilitating operation of one or more of the structure and the apparatus in a pre-determined way.
As used herein, the phrase “coupled to” refers to structures operatively connected with each other, such as electrically connected through a direct Ohmic connection or through an indirect connection (e.g., by way of another structure).
As used herein, a “memory device” means and includes microelectronic devices exhibiting memory functionality, but not necessary limited to memory functionality. Stated another way, and by way of non-limiting example only, the term “memory device” includes not only conventional memory (e.g., conventional non-volatile memory, such as conventional NAND memory; conventional volatile memory, such as conventional DRAM), but also includes an application specific integrated circuit (ASIC) (e.g., a system on a chip (SoC)), a microelectronic device combining logic and memory, and a graphics processing unit (GPU) incorporating memory.
As used herein, the term “substantially” in reference to a given parameter, property, or condition means and includes to a degree that one of ordinary skill in the art would understand that the given parameter, property, or condition is met with a degree of variance, such as within acceptable manufacturing tolerances. By way of example, depending on the particular parameter, property, or condition that is substantially met, the parameter, property, or condition may be at least 90.0% met, at least 95.0% met, at least 99.0% met, or even at least 99.9% met.
As used herein, the terms “vertical,” “longitudinal,” “horizontal,” and “lateral” are in reference to a major plane of a structure and are not necessarily defined by Earth's gravitational field. A “horizontal” or “lateral” direction is a direction that is substantially parallel to the major plane of the structure, while a “vertical” or “longitudinal” direction is a direction that is substantially perpendicular to the major plane of the structure. The major plane of the structure is defined by a surface of the structure having a relatively large area compared to other surfaces of the structure. For example, these terms may include a direction that is parallel to a primary surface of the substrate on which the referenced material or structure is located. The width and length of a respective material or structure may be defined as dimensions in a horizontal plane. With reference to the figures, the “horizontal” direction may be perpendicular to an indicated “Z” axis and may be parallel to an indicated “X” axis and an indicated “Y” axis. The height of a respective material or feature (e.g., structure) may be defined as a dimension in a vertical plane.
As used herein, features (e.g., regions, structures, devices) described as “neighboring” one another means and includes features of the disclosed identity (or identities) that are located most proximate e.g., closest to) one another. Additional features (e.g., additional regions, additional structures, additional devices) not matching the disclosed identity (or identities) of the “neighboring” features may be disposed between the “neighboring” features. Put another way, the “neighboring” features may be positioned directly adjacent one another, such that no other feature intervenes between the “neighboring” features; or the “neighboring” features may be positioned indirectly adjacent one another, such that at least one feature having an identity other than that associated with at least one of the “neighboring” features is positioned between the “neighboring” features. Accordingly, features described as “vertically neighboring” one another means and includes features of the disclosed identity (or identities) that are located most vertically proximate (e.g., vertically closest to) one another. Moreover, features described as “horizontally neighboring” one another means and includes features of the disclosed identity (or identities) that are located most horizontally proximate (e.g., horizontally closest to) one another.
As used herein, the term “intersection” means and includes a location at which two or more features (e.g., regions, structures, materials, trenches, devices) or, alternatively, two or more portions of a single feature meet. For example, an intersection between a first feature extending in a first direction (e.g., an X-direction) and a second feature extending in a second direction (e.g., a Y-direction) different than the first direction may be the location at which the first feature and the second feature meet.
As used herein, “conductive material” means and includes electrically conductive material such as one or more of a metal (e.g., tungsten (W), titanium (Ti), molybdenum (Mo), niobium (Nb), vanadium (V), hafnium (Hf), tantalum (Ta), chromium (Cr), zirconium (Zr), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pa), platinum (Pt), copper (Cu), silver (Ag), gold (Au), aluminum (Al)), an alloy (e.g., a Co-based alloy, an Fe-based alloy, an Ni-based alloy, an Fe- and Ni-based alloy, a Co- and Ni-based alloy, an Fe- and Co-based alloy, a Co- and Ni- and Fe-based alloy, an Al-based alloy, a Cu-based alloy, a magnesium (Mg)-based alloy, a Ti-based alloy, a steel, a low-carbon steel, a stainless steel), a conductive metal-containing material (e.g., a conductive metal nitride, a conductive metal silicide, a conductive metal carbide, a conductive metal oxide), and a conductively-doped semiconductor material (e.g., conductively-doped polysilicon, conductively-doped germanium (Ge), conductively-doped silicon germanium (SiGe)). In addition, a “conductive structure” means and includes a structure formed of and including conductive material.
As used herein, “insulative material” means and includes electrically insulative material, such one or more of at least one dielectric oxide material (e.g., one or more of a silicon oxide (SiOx), phosphosilicate glass, borosilicate glass, borophosphosilicate glass, fluorosilicate glass, an aluminum oxide (AlOx), a hafnium oxide (HfOx), a niobium oxide (NbOx), a titanium oxide (TiOx), a zirconium oxide (ZrOx), a tantalum oxide (TaOx), and a magnesium oxide (MgOx)), at least one dielectric nitride material (e.g., a silicon nitride (SiNy)), at least one dielectric oxynitride material (e.g., a silicon oxynitride (SiOxNy)), at least one dielectric oxycarbide material (e.g., silicon oxycarbide (SiOxCy)), at least one hydrogenated dielectric oxycarbide material (e.g., hydrogenated silicon oxycarbide (SiCxOyHz)), and at least one dielectric carboxynitride material (e.g., a silicon carboxynitride (SiOxCzNy)). Formulae including one or more of “x,” “y,” and “z” herein (e.g., SiOx, AlOx, HfOx, NbOx, TiOx, SiNy, SiOxNy, SiOxCy, SiCxOyHz, SiOxCzNy) represent a material that contains an average ratio of “x” atoms of one element, “y” atoms of another element, and “z” atoms of an additional element (if any) for every one atom of another element (e.g., Si, Al, Hf, Nb, Ti). As the formulae are representative of relative atomic ratios and not strict chemical structure, an insulative material may comprise one or more stoichiometric compounds and/or one or more non-stoichiometric compounds, and values of “x,” “y,” and “z” (if any) may be integers or may be non-integers. As used herein, the term “non-stoichiometric compound” means and includes a chemical compound with an elemental composition that cannot be represented by a ratio of well-defined natural numbers and is in violation of the law of definite proportions. In addition, an “insulative structure” means and includes a structure formed of and including insulative material.
As used herein, the term “semiconductor material” refers to a material having an electrical conductivity between those of insulative materials and conductive materials. For example, a semiconductor material may have an electrical conductivity of between about 10−8 Siemens per centimeter (S/cm) and about 104 S/cm (106 S/m) at room temperature. Examples of semiconductor materials include elements found in column IV of the periodic table of elements such as silicon (Si), germanium (Ge), and carbon (C). Other examples of semiconductor materials include compound semiconductor materials such as binary compound semiconductor materials (e.g., gallium arsenide (GaAs)), ternary compound semiconductor materials (e.g., AlxGa1-XAs), and quaternary compound semiconductor materials (e.g., GaXIn1-XAsYP1-Y), without limitation. Compound semiconductor materials may include combinations of elements from columns III and V of the periodic table of elements (III-V semiconductor materials) or from columns II and VI of the periodic table of elements (II-VI semiconductor materials), without limitation. Further examples of semiconductor materials include oxide semiconductor materials such as zinc tin oxide (ZnxSnyO, commonly referred to as “ZTO”), indium zinc oxide (InxZnyO, commonly referred to as “IZO”), zinc oxide (ZnxO), indium gallium zinc oxide (InxGayZnzO, commonly referred to as “IGZO”), indium gallium silicon oxide (InxGaySizO, commonly referred to as “IGSO”), indium tungsten oxide (InxWyO, commonly referred to as “IWO”), gallium oxide (GaxO), indium oxide (InxO), tin oxide (SnxO), titanium oxide (TixO), other binary metal oxides, zinc oxide nitride (ZnxONz), magnesium zinc oxide (MgxZnyO), zirconium indium zinc oxide (ZrxInyZnzO), hafnium indium zinc oxide (HfxInyZnzO), tin indium zinc oxide (SnxInyZnzO), aluminum tin indium zinc oxide (AlxSnyInzZnaO), silicon indium zinc oxide (SixInyZnzO), aluminum zinc tin oxide (AlxZnySnzO), gallium zinc tin oxide (GaxZnySnzO), zirconium zinc tin oxide (ZrxZnySnzO), and other similar materials.
As used herein, the term “homogeneous” means relative amounts of elements included in a feature (e.g., a material, a structure, a region) do not vary throughout different portions (e.g., different horizontal portions, different vertical portions) of the feature. Conversely, as used herein, the term “heterogeneous” means relative amounts of elements included in a feature (e.g., a material, a structure, a region) vary throughout different portions of the feature. If a feature is heterogeneous, amounts of one or more elements included in the feature may vary stepwise (e.g., change abruptly), or may vary continuously (e.g., change progressively, such as linearly, parabolically) throughout different portions of the feature. The feature may, for example, be formed of and include a stack of at least two different materials.
Unless the context indicates otherwise, the materials described herein may be formed by any suitable technique including, but not limited to, spin coating, blanket coating, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD), physical vapor deposition (PVD) (e.g., sputtering), or epitaxial growth. Depending on the specific material to be formed, the technique for depositing or growing the material may be selected by a person of ordinary skill in the art. In addition, unless the context indicates otherwise, removal of materials described herein may be accomplished by any suitable technique including, but not limited to, etching (e.g., dry etching, wet etching, vapor etching), ion milling, abrasive planarization (e.g., chemical-mechanical planarization (CMP)), or other known methods.
Referring to
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As shown in
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Within horizontal areas of the EOA region 106 and the periphery region 108 of the microelectronic device structure 100 the STI structures 114 may vertically extend (e.g., in the Z-direction) at least partially through the base structure 102. In some embodiments, the STI structures 114 only partially vertically extend through the base structure 102. STI structures 114 horizontally neighboring one another may be horizontally separated from one another by portions of the base structure 102. Each of the STI structures 114 may have substantially the same geometric configuration (e.g., the same dimensions, the same shape), or at least one of the STI structures 114 may have a different geometric configuration (e.g., one or more different dimensions, a different shape) than at least one other of the STI structures 114. The STI structures 114 may individually be formed of and include insulative material. In some embodiments, the STI structures 114 are formed of and include silicon oxide (e.g., SiO2).
The array region 104 of the microelectronic device structure 100 may subsequently be formed to include arrays of memory cells and associated features (e.g., conductive contact structures, conductive line structures), as described in further detail below. The array region 104 may also be formed to include various circuitry, such as various logic circuitry (e.g., various complemental metal-oxide-semiconductor (CMOS) devices, various conductive routing structures) for operation of the subsequently formed memory cells. The array region 104 may be considered an “active region” of the microelectronic device structure 100.
Within the horizontal area of the array region 104 of the microelectronic device structure 100, the conductive line structures 112 and the insulative structures 116 may vertically extend into the base structure 102. The conductive line structures 112 may vertically underlie the insulative structures 116. Upper boundaries (e.g., upper surfaces) of the conductive line structures 112 are vertically offset (e.g., vertically underlie) an upper boundary (e.g., an upper surface) of the base structure 102. An insulative material (e.g., gate dielectric material, dielectric oxide material) may be interposed between (e.g., may extend from and between) the conductive line structures 112 and the base structure 102. The insulative material may electrically isolate the conductive line structures 112 from the base structure 102. Upper boundaries (e.g., upper surfaces) of the insulative structures 116 may be substantially coplanar with the upper boundary of the base structure 102.
The conductive line structures 112 may be formed to vertically extend partially (e.g., less than completely) through the base structure 102. In some embodiments, the conductive line structures 112 are employed as word line structures (e.g., access line structures) of the microelectronic device structure 100. Each of the conductive line structures 112 may be formed to exhibit substantially the same dimensions and shape as each other of the conductive line structures 112, or at least one of the conductive line structures 112 may be formed to exhibit one or more of different dimensions and a different shape than at least one other of the conductive line structures 112. As a non-limiting example, each of the conductive line structures 112 may be formed to exhibit substantially the same vertical dimension(s) and substantially the same vertical cross-sectional shape(s) as each other of the conductive line structures 112; or at least one of the conductive line structures 112 may be formed to exhibit one or more of different vertical dimension(s) and different vertical cross-sectional shape(s) than at least one other of the conductive line structures 112. In some embodiments, the conductive line structures 112 are all formed to vertically extend to and terminate at substantially the same depth within the base structure 102. In additional embodiments, at least one of the conductive line structures 112 is formed to vertically extend to and terminate at a relatively deeper depth within the base structure 102 than at least one other of the conductive line structures 112. As another non-limiting example, each of the conductive line structures 112 may be formed to exhibit substantially the same horizontal dimension(s) and substantially the same horizontal cross-sectional shape(s) as each other of the conductive line structures 112; or at least one of the conductive line structures 112 may be formed to exhibit one or more of different horizontal dimension(s) (e.g., relatively larger horizontal dimension(s), relatively smaller horizontal dimension(s)) and different horizontal cross-sectional shape(s) than at least one other of the conductive line structures 112. In some embodiments, at least one of the conductive line structures 112 is formed to have one or more different horizontal dimensions (e.g., in the X-direction and/or in the Y-direction) than at least one other of the conductive line structures 112.
The conductive line structures 112 may individually be formed of and include conductive material, such as such one or more of at least one metal, at least one an alloy, at least one conductive metal-containing material, and at least one conductively doped semiconductor material. In some embodiments, the conductive line structures 112 are individually formed of and include tungsten (W). The conductive line structures 112 may each be substantially homogeneous, or more or more of the conductive line structures 112 may individually be heterogeneous. At least one of the conductive line structures 112 may, for example, be formed of and include a stack of at least two different conductive materials.
The insulative structures 116 may be vertically interposed between the ILD material 110 and the conductive line structures 112. The insulative structures 116 may individually be formed of insulative material, such as one or more of a dielectric oxide material (e.g., silicon dioxide; phosphosilicate glass; borosilicate glass; borophosphosilicate glass; fluorosilicate glass; aluminum oxide; a combination thereof), a dielectric nitride material (e.g., SiNy, a dielectric an oxynitride material (e.g., SiOxNy), a dielectric carbonitride material (e.g., SiCxNy), and a dielectric carboxynitride material (e.g., SiOxCyNz), and amorphous carbon. In some embodiments, the insulative structures 116 are individually formed of and include silicon oxide (e.g., SiOx, such as SiO2). In additional embodiments, the insulative structures 116 are individually formed of and include silicon nitride (e.g., SiNy, such as Si3N4). The insulative structures 116 may individually be substantially homogeneous, or one or more of the insulative structures 116 may be heterogeneous. At least one of the insulative structures 116 may, for example, be formed of and include a stack of at least two different insulative materials.
Although depicted as having rectangular vertical cross-sectional shapes in
Horizontally interposed between neighboring conductive line structures 112 and the neighboring insulative structures 116 are projecting portions 113 of the base structure 102. The projecting portions 113 of the base structure 102 may be formed of and include semiconductor material (e.g., silicon, such as polycrystalline silicon). The projecting portions 113 of the base structure 102 are also reference to herein as “semiconductive projections” or “semiconductive structures.” The projecting portions 113 of the base structure 102 vertically extend past upper boundaries of the conductive line structures 112, and at least to upper boundaries of the insulative structures 116. Insulative material (e.g., gate dielectric material, dielectric oxide material) may be interposed between the projecting portions 113 of the base structure 102 and the conductive line structures 112.
Still referring to
The ILD material 110 may be formed to a desired thickness (e.g., vertical dimension in the Y-direction), such as a thickness within range of from about 1 nanometer (nm) to about 20 nm (e.g., from about 4 nm to about 12 nm, from about 4 nm to about 6 nm). In some embodiments, the ILD material 110 is formed to a vertical thickness within a range of from about 4 nm to about 6 nm.
As shown in
The gate dielectric material 122 may be formed of and include insulative material, such as one or more of a dielectric oxide material (e.g., silicon dioxide; phosphosilicate glass; borosilicate glass; borophosphosilicate glass; fluorosilicate glass; aluminum oxide; a combination thereof), a dielectric nitride material (e.g., SiNy, a dielectric an oxynitride material (e.g., SiOxNy), a dielectric carbonitride material (e.g., SiCxNy), and a dielectric carboxynitride material (e.g., SiOxCyNz), and amorphous carbon. In some embodiments, the gate dielectric material 122 is formed of and includes high-K dielectric material, such as high-K dielectric oxide material (e.g., one or more hafnium oxide (HfOx), niobium oxide (NbOx), titanium oxide (TiOx), aluminum oxide (AlOx), and zirconium oxide (ZrOx)).
The first gate material 120 may be formed of and include conductive material, such as one or more of at least one metal (e.g., one or more of tungsten, titanium, nickel, platinum, gold), at least one metal alloy, at least one metal-containing material (e.g., one or more of at least one metal nitride, at least one metal silicide, at least one metal carbide, at least one conductive metal oxide), and at least one conductively doped semiconductor material (e.g., conductively doped silicon, conductively doped germanium, conductively doped silicon germanium). In some embodiments, the first gate material 120 is formed of and includes tungsten (W). In additional embodiments, the first gate material 120 is formed of and includes conductively doped semiconductor material, such as conductively doped silicon germanium (SiGe) material. For example, the first gate material 120 may be formed of and include epitaxial SiGe material doped with at least one N-type dopant (e.g., one or more of arsenic, phosphorous, antimony, and bismuth) or at least one P-type dopant (e.g., one or more of boron, aluminum, and gallium).
The second gate material 118 may be formed of and include additional conductive material. In some embodiments, the first gate material 120 is formed of and includes conductively doped semiconductor material, such as conductively doped polysilicon. For example, the second gate material 118 may be formed of and include polysilicon doped with at least one N-type dopant (e.g., one or more of arsenic, phosphorous, antimony, and bismuth) or and least one P-type dopant (e.g., one or more of boron, aluminum, and gallium).
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In some embodiments, the trench 126 between the remaining portion of the ILD material 110 and the remaining portions of the gate dielectric material 122, the first gate material 120, and the second gate material 118 is positioned within a horizontal area of an STI structure 114 within the EOA region 106. In addition, a horizontal center of the trench 126 in the X-direction may, for example, be substantially aligned with a horizontal center of the STI structure 114 exposed thereby. In additional embodiments, the trench 126 is positioned outside of the horizontal area of the STI structure 114 most proximate thereto, or the horizontal center of the trench in the X-direction is offset from the horizontal center of the STI structure 114 exposed thereby.
The sacrificial material 128 may be formed of and include insulative material. In some embodiments, the sacrificial material 128 is formed of includes dielectric nitride material (e.g., SiNy, such as Si3N4). In additional embodiments, the sacrificial material 128 is formed of and includes a dielectric oxide material (e.g., SiOx, such as SiO2). The sacrificial material 128 may be substantially homogeneous, or the sacrificial material 128 may be heterogeneous. The sacrificial material 128 may be formed to a desired vertical height above upper boundaries of the remaining portions of the ILD material 110 and the second gate material 118.
Referring to
A vertical height in the Z-direction of each of the sacrificial line structures 132 may be within a range from about 20 nm to about 100 nm, such as from about 30 nm to about 60 nm, or from about 35 nm to about 45 nm. In some embodiments, each of the sacrificial line structures 132 has a vertical height within a range of from about 35 nm to about 45 nm.
Horizontal widths and positions in the X-direction of the sacrificial line structures 132 may at least partially depend on horizontal widths and positions in the X-direction of the projecting portions 113 of the base structure 102, the conductive line structures 112, and the insulative structures 116. Each of the sacrificial line structures 132 may have a horizontal width and a horizontal position permitting a horizontal center of the sacrificial line structures 132 in the X-direction to be substantially horizontally aligned with a horizontal center in the X-direction of one of the projecting portions 113 of the base structure 102, and also permitting a horizontal center in the X-direction of each of the first openings 130 horizontally neighboring the sacrificial line structures 132 be substantially aligned with a horizontal center in the X-direction of an additional one of the projecting portions 113 of the base structure 102. In some embodiments, each of the sacrificial line structures 132 is formed to horizontally overlap, in the X-direction, one of the projecting portions 113 of the base structure 102 and two (2) of the insulative structures 116 (and, hence, two (2) of the conductive line structures 112) horizontally neighboring the projecting portion 113 of the base structure 102. A ratio of the horizontal width of an individual sacrificial line structure 132 to the horizontal width of an individual first opening 130 may be within range of from about 1.5:1 to about 3.0:1, such as from about 1.75:1 to about 2.5:1, or about 2.0:1. Each of the sacrificial line structures 132 may, for example, be formed to have a horizontal width in the X-direction within a range of from about 10 nm to about 60 nm, such as from about 15 nm to about 50 nm, or from about 20 nm to about 40 nm. In some embodiments, each of the sacrificial line structures 132 is formed to have a horizontal width in the X-direction within a range of from about 15 nm to about 30 nm. A pitch between two sacrificial line structures 132 horizontally neighboring may be within a range of from about 10 nm to about 100 nm, such as from about 15 nm to about 75 nm, from about 15 nm to about 50 nm, from 20 nm to about 50 nm, or from about 25 nm to about 35 nm.
The first openings 130 may be formed to horizontally alternate with the sacrificial line structures 132 in the X-direction. Each first openings 130 may horizontal extend in the X-direction between two (2) of the insulative structures 116 (and, hence, between two (2) of the conductive line structures 112) horizontally neighboring one another in the X-direction. In some embodiments, an individual first opening 130 is formed to horizontally overlap each of the two (2) of the insulative structures 116 (and, hence, each of the two (2) of the conductive line structures 112) most horizontally proximate thereto. In additional embodiments, an individual first opening 130 is not formed to horizontally overlap each of the two (2) of the insulative structures 116 (and, hence, each of the two (2) of the conductive line structures 112) most horizontally proximate thereto. For example, the horizontal distance in the X-direction between the two (2) of the insulative structures 116 may be greater than the maximum horizontal width in the X-direction of the individual first opening 130. Each of the first openings 130 may, for example, be formed to have a horizontal width in the X-direction within a range from about 8 nm to about 20 nm, such as from about 8 nm to about 15 nm, or from about 9 nm to about 12 nm. An aspect ratio (AR) of each of the first openings 130 may be within a range from about 10:1 to about 2:1, such as from about 6:1 to about 2:1, or from about from 5:1 to about 3:1.
Referring to next to
Referring to
The fill structures 134 may positioned at or proximate horizontal boundaries of the array region 104 of the microelectronic device structure 100. The plug structures 138 may collectively be positioned horizontally between pairs of the fill structures 134, and may be dispersed throughout the horizontal area of the array region 104. The horizontal positions in the X-direction of the fill structures 134 and the plug structures 138 may correspond to the horizontal positions in the X-direction of the first openings 130 (
The fill structures 134 and the plug structures 138 may individually be formed of and include one or more of semiconductor material and conductive material. In some embodiments, the fill structures 134 and the plug structures 138 are individually formed of and include semiconductor material, such as polycrystalline silicon. In additional embodiments, the fill structures 134 and the plug structures 138 are individually formed of and include conductive material, such one or more of at least one metal, at least one an alloy, at least one conductive metal-containing material, and at least one conductively doped semiconductor material. In further embodiments, the fill structures 134 and the plug structures 138 are individually formed of and include a combination of semiconductor material (e.g., polysilicon) and conductive material (e.g., metal). For example, relatively lower portions of the fill structures 134 and the plug structures 138 may be formed of and include semiconductor material (e.g., polysilicon), and relatively higher portions of the fill structures 134 and the plug structures 138 may be formed of and include conductive material (e.g., metal). In some embodiments, upper portions of the fill structures 134 and the plug structures 138 having vertical dimensions within a range of from about 5 nm to about 25 nm (e.g., from about 10 nm to about 15 nm) have a different material composition than relatively lower portions of the fill structures 134 and the plug structures 138.
Referring to
The isolation structures 140 may be dispersed throughout the horizontal area of the array region 104 of the microelectronic device structure 100. The horizontal positions in the X-direction of the fill structures 134 and the plug structures 138 may correspond to the horizontal positions in the X-direction of the first openings 130 (
The isolation structures 140 may individually be formed of and include insulative material. A material composition of the isolation structures 140 may be different than a material composition of the sacrificial line structure 132. The sacrificial line structure 132 may be selectively etchable relative to the isolation structures 140 during mutual exposure to a first etchant, and the isolation structures 140 may be selectively etchable relative to sacrificial line structure 132 during mutual exposure to a second etchant different than the first etchant. In some embodiments, the isolation structures 140 are individually formed of and include carbon-doped dielectric nitride material. In additional embodiments, the isolation structures 140 are individually formed of and include carbon-doped dielectric oxide material. In further embodiments, the isolation structures 140 are individually formed of and include low-K dielectric material (e.g., one or more of SiOxCy, SiOxNy, SiCxOyHz, and SiOxCyNz).
In some embodiments, the fill structures 134 and the plug structures 138 are formed prior to the formation of the isolation structures 140. Portions of the ILD material 110 may be removed (e.g., by way of so-called “punch through” etching) at predetermined horizontal positions of the plug structures 138, and then the resulting openings in the ILD material 110 as well as the first openings 130 (
In additional embodiments, the isolation structures 140 are formed prior to the fill structures 134 and the plug structures 138. The first openings 130 (
Referring to next to
The sacrificial line structures 132 (
The dielectric fill material 146 may be formed of and include insulative material, such as one or more of dielectric oxide material (e.g., SiOx, such as SiO2; phosphosilicate glass; borosilicate glass; borophosphosilicate glass; fluorosilicate glass; aluminum oxide; high-k oxide, such as HfOx; a combination thereof), dielectric nitride material (e.g., SiNy, dielectric oxynitride material (e.g., SiOxNy), dielectric carbonitride material (e.g., SiCxNy), and dielectric carboxynitride material (e.g., SiOxCyNz), and amorphous carbon. In some embodiments, the dielectric fill material 146 is formed of and includes dielectric oxide materials (e.g., SiOx, such as SiO2). The dielectric fill material 146 may be formed within the linear trenches resulting from the removal of the sacrificial line structures 132 (
Optionally, the sacrificial spacer material 148 may be formed (e.g., conformally formed) within the linear trenches resulting from the removal of the sacrificial line structures 132 (
If formed, the sacrificial spacer material 148 may be formed of and include at least one material having etch selectively relative to the dielectric fill material 146 and the ILD material 110. In some embodiments, the sacrificial spacer material 148 is formed of and includes a dielectric oxide material, such as AlOx (e.g., Al2O3). In additional embodiments, the sacrificial spacer material 148 is formed of and includes a different dielectric material (e.g., a nitride dielectric material, an oxynitride dielectric material, a carbonitride dielectric material, a carboxynitride dielectric material) may be employed in place of the oxide dielectric material forming the sacrificial spacer material 148, so long as the different dielectric material has etch selectivity relative to the dielectric fill material 146 and the ILD material 110.
The sacrificial spacer material 148, if any, may be formed to any desired thickness, such as a thickness less than or equal to about 10 nm, less than or equal to about 6 nm, or less than or equal to about 4 nm. The thickness of the sacrificial spacer material 148 may at least partially depend on the geometric configuration (e.g., dimensions, shapes) of the linear trenches within which the sacrificial spacer material 148 is formed.
Referring next to
As shown in
The masking material 150 of the patterned mask 149 may be formed of an include at least one material facilitating subsequent removal of exposed portions of the dielectric fill material 146 relative to non-exposed (e.g., covered) portions of the dielectric fill material 146, the sacrificial spacer material 148 (if any), the fill structures 134, and the plug structures 138. In some embodiments, the masking material 150 is formed of and includes a photoresist material (e.g., a positive tone photoresist material, a negative tone photoresist material). In additional embodiments, the masking material 150 is formed of and includes a different material, such as a hard mask material (e.g., one or more of amorphous carbon and doped amorphous carbon).
Still referring to
In some embodiments, a dimension of an individual pattern opening 152 in the X-direction is less than or equal to about a distance between plug structures 138 horizontally neighboring one another in the X-direction. By way of non-limiting example, the dimension of an individual pattern opening 152 in the X-direction may be within a range from about 15 nm to about 35 nm, such as from about 15 nm to about 30 nm, or from about 15 nm to about 25 nm. In addition, in some embodiments, a dimension of an individual pattern opening 152 in the Y-direction is less than or equal to a dimension in the Y-direction of an individual plug structure 138 adjacent thereto in the X-direction. By way of non-limiting example, the dimension of an individual pattern opening 152 in the Y-direction may be within a range from about 15 nm to about 35 nm, such as from about 15 nm to about 30 nm, or from about 15 nm to about 25 nm. In some embodiments, a dimension of an individual plug structure 138 in the X-direction is substantially equal to a dimension of the individual plug structure 138 in the Y-direction.
Referring to next to
In some embodiments, a material removal process to form the first trenches 153 comprises at least one etching process, such as one or more of a wet etching process and a vapor etching process. By way of non-limiting example, depending at least on the material compositions of the dielectric fill material 146 (
With continued reference to
Referring collectively to
In some embodiments, an additional material removal process to form the first contact openings 154 comprises at least one etching process, such as one or more of a vapor etching process and a dry etching process. The additional material removal process to form the first contact openings 154 may, for example, comprise a so-called “punch through” etch. The etching process may result in the removal of portions of the sacrificial spacer material 148 (if any), the ILD material 110, and upper regions of the projecting portions 113 of the base structure 102 without substantial removal of the STI structures 114 and the insulative structures 116. In some embodiments, additional material removal process to remove portions of the sacrificial spacer material 148 (if any), the ILD material 110, and upper regions of the projecting portions 113 of the base structure 102 and form the contact openings 154 comprises a single anisotropic dry etch process (e.g., using one or more of chlorine gas, boron trichloride (BCl3), oxygen, and argon), where the etch chemistries are in situ changed for “punching through” the sacrificial spacer material 148, for “punching through” the ILD material 110, and for removing the upper regions of the projecting portions 113 of the base structure 102. In additional embodiments, the additional material removal process to remove portions of the sacrificial spacer material 148 (if any), the ILD material 110, and the upper regions of the projecting portions 113 of the base structure 102 comprises multiple (e.g., two or more), separate and distinct etch processes. In some embodiments, the additional material removal process to form the contact openings 154 is preceded by a deposition of another material (e.g., mask material) to protect the fill structures 134 and plug structures 138 during the additional material removal process.
Referring to
The second optional mask material 144 (
Referring to
The digit line spacer material 160 may be formed of and include dielectric material. In some embodiments, the digit line spacer material 160 is formed of and includes a dielectric nitride material (e.g., SiNy, such as Si3N4). In additional embodiments, the digit line spacer material 160 is formed of and includes at least one low-K dielectric material, such as one or more of silicon oxycarbide (SiOxCy), silicon oxynitride (SiOxNy), hydrogenated silicon oxycarbide (SiCxOyHz), and silicon oxycarbonitride (SiOxCzNy). By way of non-limiting example, the digit line spacer material 160 may be formed of and include SiCxOyHz. In some such embodiments, hydrogen migration within and from the SiCxOyHz may result in the formation of air pockets (e.g., air bubbles) within the digit line conformal spacer material 160.
As shown in
The digit line spacer material 160 may be formed through a multistep process. In some embodiments, such as embodiments wherein the digit line spacer material 160 is formed of and includes dielectric nitride material, the digit line spacer material 160 is formed (e.g., conformally formed) inside and outside of the second contact openings 155 and the second trenches 156, portions of the digit line spacer material 160 overlying upper boundaries of the second trenches 156 are removed (e.g., by way of CMP), and then additional portions of the digit line spacer material 160 at the bottoms of the second contact openings 155 are removed by way a “punch through” etch to expose the upper surfaces of the projecting portions 113 of the base structure 102. In additional embodiments, a “punch through” etch is not employed to remove portions of the digit line spacer material 160 on the upper surfaces of the projecting portions 113 of the base structure 102, as described in further detail below. For example, the digit line spacer material 160 may be formed through one or more of an epitaxial growth process and a material deposition process that precludes the digit line spacer material 160 from being formed on portions of the upper surfaces of the projecting portions 113 of the base structure 102. Furthermore, in some embodiments, portions (e.g., upper portions) of the digit line spacer material 160 are subsequently removed and replaced with additional digit line spacer material (e.g., low-K dielectric material in place of dielectric nitride material), as also described in further detail below.
Referring to next to
The conductive contacts 164 may individually be formed of and include conductive material. In some embodiments, the conductive contacts 164 individually include multiple conductive materials. As a non-limiting example, the conductive contacts 164 may individually include conductive material and conductive barrier material on or over the conductive material. The conductive material may include one or more of at least one elemental metal (e.g., W, Ti, Mo, Nb, V, Hf, Ta, Cr, Zr, Fe, Ru, Os, Co, Rh, Ir, Ni, Pa, Pt, Cu, Ag, Au, Al), at least one alloy (e.g., a Co-based alloy, an Fe-based alloy, an Ni-based alloy, an Fe- and Ni-based alloy, a Co- and Ni-based alloy, an Fe- and Co-based alloy, a Co- and Ni- and Fe-based alloy, an Al-based alloy, a Cu-based alloy, a magnesium (Mg)-based alloy, a Ti-based alloy, a steel, a low-carbon steel, a stainless steel), at least one conductively doped semiconductor material (e.g., conductively doped polysilicon, conductively doped Ge, conductively-doped SiGe), and at least one conductive metal-containing material (e.g., a conductive metal nitride, a conductive metal silicide, a conductive metal carbide, a conductive metal oxide). The conductive barrier material may, for example, include one or more of elemental metal, conductive silicide material (e.g., cobalt silicide (CoSix), tungsten silicide (WSix), tantalum silicide (TaSix), molybdenum silicide (MoSix), nickel silicide (NiSix), and titanium silicide (TiSix)), and conductive nitride material (e.g., tungsten nitride (WNy), tantalum nitride (TaNy), titanium nitride (TiNy), and molybdenum nitride (MoNx)).
The conductive contacts 164 are individually formed to be positioned horizontally between two (2) of insulative structures 116 (and, hence, two (2) of the conductive line structures 112). Each conductive contact 164 may have an upper boundary (e.g., upper surface) vertically above upper boundaries (e.g., upper surfaces) of the insulative structures 116, and a lower boundary (e.g., a lower surface) vertically above lower boundaries (e.g., lower surfaces) of the insulative structures 116. In some embodiments, upper boundaries of the conductive contacts 164 are formed to be substantially vertically aligned with an upper boundary (e.g., upper surface) of the ILD material 110. In additional embodiments, upper boundaries of the conductive contacts 164 are formed to be vertically offset from (e.g., vertically overlie, vertically underlie) the upper boundary (e.g., upper surface) of the ILD material 110. For example, upper boundaries of the conductive contacts 164 may be formed to be substantially vertically aligned with upper boundaries (e.g., upper surfaces) of portions of the digit line spacer material 160 vertically overlying and in physical contact with the ILD material 110. The lower boundaries of the conductive contacts 164 may be formed to vertically overlie upper boundaries (e.g., upper surfaces) of the conductive line structures 112.
In some embodiments, to form the conductive contacts 164, portions of the digit line spacer material 160 are subjected to a “punch through” etch to expose the projecting portions 113 of the base structure 102, and then a seed material is formed (e.g., epitaxially grown) at the resulting termination points 162 to facilitate the formation of the conductive contacts 164. The conductive contacts 164 may be formed using the seed material, and may individual include the seed material. In some embodiments, portions of the conductive contacts 164 at least partially epitaxially grown using the seed material. In additional embodiments, portions of the conductive contacts 164 are deposited on the seed material. A material removal process may optionally be employed following formation (e.g., epitaxial growth, deposition) of material of the conductive contacts 164 to facilitate desired upper vertical boundaries of the conductive contacts 164. In addition, optionally, following the formation of the conductive contacts 164, portions of the digit line spacer material 160 vertically overlying the upper vertical boundaries of the conductive contacts 164 may be removed (e.g., wet etched), replaced with a different digit line spacer material, and then the different digit line spacer material may be subject to an additional “punch through” etch to expose the conductive contacts 164. By way of non-limiting example, if the digit line spacer material 160 is formed of and includes a dielectric nitride material, following the formation of conductive contacts 164 portions of the digit line spacer material 160 overlying the upper vertical boundaries of the digit line spacer material 160 may be removed (e.g., wet etched), a second digit line spacer material formed of and including a low-K dielectric material may be formed (e.g., conformally formed) to partially fill remaining portions of the second trenches 156, and then the second digit line spacer material may be subjected to an additional “punch through” etch to expose the conductive contacts 164.
In additional embodiments, the conductive contacts 164 are formed without the use of a “punch through” etch through the digit line spacer material 160. For example, an epitaxial growth process employed to form digit line spacer material 160 may also be employed to form the seed material for the conductive contacts 164. A first processing act of the epitaxial growth process may include epitaxially growing a silicon-containing material for the digit line spacer material 160. The first processing act may then be halted and a second processing act may be effectuated to grow the seed material at the lower vertical boundaries of the second contact openings 155 (
In further embodiments, a sacrificial material (e.g., spin-on-carbon (SOC)) is formed to fill the second contact openings 155 (
Referring to next to
The digit line structures 166 may be formed of and include conductive material. For example, the digit line structures 166 may be formed to include one or more of metal (e.g., tungsten, titanium, nickel, platinum, gold, copper), metal alloy, metal-containing material (e.g., metal nitrides, metal silicides, metal carbides, metal oxides), and conductively-doped semiconductor material (e.g., conductively doped silicon). By way of non-limiting example, the digit line structures 166 may individually comprise one or more of titanium nitride (TiNy), tantalum nitride (TaNy), tungsten nitride (WNy), titanium aluminum nitride (TiAlxNy), elemental titanium (Ti), elemental platinum (Pt), elemental rhodium (Rh), elemental iridium (Ir), iridium oxide (IrOx), elemental ruthenium (Ru), ruthenium oxide (RuOx), and alloys thereof. In some embodiments, the digit line structures 166 are formed of and include a conductive material having relatively lower electrical resistivity than the conductive contacts 164.
The digit line structures 166 may formed by depositing conductive material within the second trenches 156, and then vertically recessing the conductive material to form the digit line structures 166. In some embodiments, the deposition process comprises one or more of a CVD process and an ALD process employing at least one metal-containing precursor (e.g., tungsten-containing precursor) and at least one reducing agent (e.g., hydrogen (H2) gas). In some such embodiments, the metal-containing precursor is substantially free of fluorine atoms, such as a tungsten chloride (WClx, where x is an integer between 2 and 6). The use of WClx may mitigate the risk of damage to the conductive contacts 164 as compared, for example, to fluorine-based precursors. In additional embodiments, the deposition process comprises a PVD process.
Referring to next to
Referring to next to
The capping dielectric structures 172 may be formed of and include dielectric material, such as one or more of a dielectric oxide material, dielectric nitride material, dielectric oxynitride material, and dielectric carboxynitride material. In some embodiments, the capping dielectric structures 172 are formed of and include dielectric nitride material, such as silicon nitride (Si3N4). The capping dielectric structures 172 may individually be substantially homogeneous, or may individually be heterogeneous.
Following the formation of the capping dielectric structures 172, the microelectronic device structure 100 may be subjected to additional processing to form a microelectronic device (e.g., a memory device). By way of non-limiting example, storage node devices (e.g., capacitors, memory elements) may be formed vertically over and in electrical communication with the plug structures 138. In some embodiments, conductive redistribution layer (RDL) structures are also formed vertically between and in electrical communication with the plug structures 138 and the storage node devices. The conductive RDL structures may, for example, be employed to facilitate a horizontal pattern (e.g., a horizontal arrangement) of the storage node devices that is different than a horizontal pattern of the plug structures 138, while electrically connecting the plug structures 138 to the storage node devices.
Thus, in accordance with embodiments of the disclosure, a method of forming a microelectronic device comprises forming interlayer dielectric material over a base structure comprising semiconductive structures separated from one another by conductive line structures. Sacrificial line structures separated from one another by trenches are formed over the interlayer dielectric material. The sacrificial line structures horizontally overlap some of the semiconductive structures, and the trenches horizontally overlap some other of the semiconductive structures. Plug structures are formed within horizontal areas of the trenches and extend through the interlayer dielectric material and into the some other of the semiconductive structures. The sacrificial line structures are replaced with additional trenches. Conductive contact structures are formed within horizontal areas of the additional trenches and extend through the interlayer dielectric material and into the some of the semiconductive structures. Additional conductive line structures are formed within the additional trenches and in contact with the conductive contact structures.
Microelectronic device structures (e.g., the microelectronic device structure 100 at or following the processing stage previously described with reference to
The memory cells 202 of the memory device 200 are programmable to at least two different logic states (e.g., logic 0 and logic 1). Each memory cell 202 may individually include a capacitor and transistor (e.g., a pass transistor). The capacitor stores a charge representative of the programmable logic state (e.g., a charged capacitor may represent a first logic state, such as a logic 1; and an uncharged capacitor may represent a second logic state, such as a logic 0) of the memory cell 202. The transistor grants access to the capacitor upon application (e.g., by way of one of the word lines 206) of a minimum threshold voltage to a semiconductive channel thereof for operations (e.g., reading, writing, rewriting) on the capacitor.
The digit lines 204 are connected to the capacitors of the memory cells 202 by way of the transistors of the memory cells 202. The transistors of the memory cells 202 may include, for example, an embodiment of the microelectronic device structure 100 previously described herein with reference to
The memory controller 212 may control the operations of memory cells 202 through various components, including the row decoder 208, the column decoder 210, and the sense device 214 (e.g., local I/O device). The memory controller 212 may generate row address signals that are directed to the row decoder 208 to activate (e.g., apply a voltage potential to) predetermined word lines 206, and may generate column address signals that are directed to the column decoder 210 to activate (e.g., apply a voltage potential to) predetermined digit lines 204. The sense device 214 may include sense amplifiers configured and operated to receive digit line inputs from the digit lines selected by the column decoder 210 and to generate digital data values during read operations. The memory controller 212 may also generate and control various voltage potentials employed during the operation of the memory device 200. In general, the amplitude, shape, and/or duration of an applied voltage may be adjusted (e.g., varied), and may be different for various operations of the memory device 200.
During use and operation of the memory device 200, after being accessed, a memory cell 202 may be read (e.g., sensed) by the sense device 214. The sense device 214 may compare a signal (e.g., a voltage) of an appropriate digit line 204 to a reference signal in order to determine the logic state of the memory cell 202. If, for example, the digit line 204 has a higher voltage than the reference voltage, the sense device 214 may determine that the stored logic state of the memory cell 202 is a logic 1, and vice versa. The sense device 214 may include transistors and amplifiers to detect and amplify a difference in the signals (commonly referred to in the art as “latching”). The detected logic state of a memory cell 202 may be output through the column decoder 210 to the input/output device 216. In addition, a memory cell 202 may be set (e.g., written) by similarly activating an appropriate word line 206 and an appropriate digit line 204 of the memory device 200. By controlling the digit line 204 while the word line 206 is activated, the memory cell 202 may be set (e.g., a logic value may be stored in the memory cell 202). The column decoder 210 may accept data from the input/output device 216 to be written to the memory cells 202. Furthermore, a memory cell 202 may also be refreshed (e.g., recharged) by reading the memory cell 202. The read operation will place the contents of the memory cell 202 on the appropriate digit line 204, which is then pulled up to full level (e.g., full charge or discharge) by the sense device 214. When the word line 206 associated with the memory cell 202 is deactivated, all of memory cells 202 in the row associated with the word line 206 are restored to full charge or discharge.
Thus, a microelectronic device according to embodiments of the disclosure comprises interlayer dielectric material over a base structure comprising semiconductive structures alternating with conductive line structures in a first horizontal direction; conductive contact structures vertically extending through the interlayer dielectric material and in physical contact with some of the semiconductive structures; additional conductive line structures in physical contact with the conductive contact structures and horizontally extending in parallel in a second horizontal direction orthogonal to the first horizontal direction; plug structures comprising semiconductive material horizontal alternating with the additional conductive line structures in the first horizontal direction, the plug structures vertically extending through the interlayer dielectric material and in physical contact with some other of the semiconductive structures; and dielectric liner structures horizontally interposed between the plug structures and the conductive contact structures and the additional conductive line structures, portions of the dielectric liner structures at vertical elevations of the conductive contact structures having different material compositions than additional portions of the dielectric liner structures at vertical elevations of the additional conductive line structures.
Microelectronic devices (e.g., the memory device 200 shown in
Thus, an electronic system according to embodiments of the disclosure comprises an input device, an output device, a processor device operably coupled to the input device and the output device, and a memory device operably coupled to the processor device and comprising a microelectronic device structure. The microelectronic device structure comprises interlayer dielectric material over a base structure comprising semiconductive structures horizontally alternating with word line structures; digit line contact structures extending through the interlayer dielectric material and to some of the semiconductive structures; digit line structures on the digit line contact structures; cell contact structures horizontal alternating with the digit line structures, the cell contact structures extending through the interlayer dielectric material and to some other of the semiconductive; dielectric liner structures horizontally extending from the cell contact structures to the digit line contact structures and the digit line structures, the dielectric liner structures comprising: lower portions at vertical positions of the digit line contact structures and comprising dielectric nitride material; and upper portions at vertical positions of the digit line structures and comprising low-K dielectric material; and storage node devices in electrical communicate with the cell contact structures.
The structures, devices, methods, and systems of the disclosure advantageously facilitate one or more of improved microelectronic device performance, reduced costs (e.g., manufacturing costs, material costs), increased miniaturization of components, and greater packaging density as compared to conventional structures, conventional devices, conventional methods, and conventional systems. For example, the methods of the disclosure may facilitate the formation of self-aligned features (e.g., the plug structures 138, the conductive contacts 164) using damascene processes, thereby decreasing probability of misalignment the features, decreasing process complexity, and/or decreasing the risk of undesirable damage to neighboring features relative to conventional processes. The structure, devices, methods, and systems of the disclosure may improve scalability, efficiency, and simplicity as compared to conventional structures, conventional devices, conventional methods, and conventional systems.
While the disclosure is susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and have been described in detail herein. However, the disclosure is not intended to be limited to the particular forms disclosed. Rather, the disclosure is to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure as defined by the following appended claims and their legal equivalents.
