with at least one step of making a word line

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H01L27/10891

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/10891with at least one step of making a word line

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure having a landing area extends from first po...
- Patent number 11,665,887
- Issue date May 30, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Wei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having a channel provided on a memory unit
- Patent number 11,647,625
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Jaeho Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a transistor and a capacitor along a common horizont...
- Patent number 11,626,406
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Fredrick D. Fishburn
- G11 - INFORMATION STORAGE
Information Patent Grant
DRAM with selective epitaxial cell transistor
- Patent number 11,626,407
- Issue date Apr 11, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 11,626,411
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Jiyoung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of testing a gap fill for DRAM
- Patent number 11,621,266
- Issue date Apr 4, 2023
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried word line structure and manufacturing method thereof
- Patent number 11,610,892
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Chang-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory and method for manufacturing the dram...
- Patent number 11,610,611
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Ting-Ting Ke
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure
- Patent number 11,600,726
- Issue date Mar 7, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qinghua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor memory device with air gaps betw...
- Patent number 11,587,934
- Issue date Feb 21, 2023
- NANYA TECHNOLOGY CORPORATION
- Chun-Cheng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity DRAM buried word line stack
- Patent number 11,587,936
- Issue date Feb 21, 2023
- Applied Materials, Inc.
- Yixiong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
DRAM memory device having angled structures with sidewalls extendin...
- Patent number 11,569,242
- Issue date Jan 31, 2023
- Applied Materials, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including passing word lines comprising a band offset m...
- Patent number 11,569,353
- Issue date Jan 31, 2023
- Micron Technology, Inc.
- Venkata Naveen Kumar Neelapala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked-substrate DRAM semiconductor devices
- Patent number 11,569,243
- Issue date Jan 31, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,569,240
- Issue date Jan 31, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qinghua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with vertical gate transistor
- Patent number 11,563,007
- Issue date Jan 24, 2023
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having buried word line
- Patent number 11,557,594
- Issue date Jan 17, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Wei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate induced drain leakage in DRAM wordline
- Patent number 11,552,082
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Sung-Kwan Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, arrays of transistors, arrays of memory cells individu...
- Patent number 11,545,492
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of fabricating the same
- Patent number 11,545,493
- Issue date Jan 3, 2023
- Winbond Electronics Corp.
- Ying-Chu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for memory cells
- Patent number 11,538,808
- Issue date Dec 27, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with air gap and method for fabricating the same
- Patent number 11,538,812
- Issue date Dec 27, 2022
- SK Hynix Inc.
- Chan-Bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device with array region and...
- Patent number 11,527,538
- Issue date Dec 13, 2022
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure formation at differential depths
- Patent number 11,515,311
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Venkata Naveen Kumar Neelapala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,508,731
- Issue date Nov 22, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Shuai Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies, and methods of forming integrated assemblies
- Patent number 11,508,734
- Issue date Nov 22, 2022
- Micron Technology, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with ion doped regions that provide dopan...
- Patent number 11,508,733
- Issue date Nov 22, 2022
- Samsung Electronics Co., Ltd.
- Hyungjun Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,502,180
- Issue date Nov 15, 2022
- United Microelectronics Corp.
- Chia-Wei Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,502,181
- Issue date Nov 15, 2022
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical three-dimensional memory with vertical channel
- Patent number 11,495,600
- Issue date Nov 8, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20240153873
- Publication date May 9, 2024
- NANYA TECHNOLOGY CORPORATION
- Yu-Hsin WU
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240147690
- Publication date May 2, 2024
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY
- Publication number 20240098965
- Publication date Mar 21, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SUPPORT PILLARS WITH MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HO...
- Publication number 20240098969
- Publication date Mar 21, 2024
- Micron Technology, Inc.
- David K. Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR WORD LINE MULTIPLEXING IN THREE-DIMENSIONAL MEMORY A...
- Publication number 20240071423
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BONDING STRUCTURE AND METHOD OF MANUFAC...
- Publication number 20240074145
- Publication date Feb 29, 2024
- NANYA TECHNOLOGY CORPORATION
- YI-JEN LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LANTHANUM NITRIDE AS A DRAM MOLYBDENUM LINER
- Publication number 20240074162
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Rand Haddadin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF
- Publication number 20240074152
- Publication date Feb 29, 2024
- NANYA TECHNOLOGY CORPORATION
- Chiang-Lin SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240064960
- Publication date Feb 22, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240032273
- Publication date Jan 25, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- XUANXUAN CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device having word line surrounding gate structure and manuf...
- Publication number 20240023321
- Publication date Jan 18, 2024
- NANYA TECHNOLOGY CORPORATION
- Szu-Yao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240023310
- Publication date Jan 18, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Min LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240015952
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE HAVING AIR GAP
- Publication number 20240008261
- Publication date Jan 4, 2024
- NANYA TECHNOLOGY CORPORATION
- Lu-Wei CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE...
- Publication number 20240008247
- Publication date Jan 4, 2024
- Changxin Memory Technologies, Inc.
- Xiaojie LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME
- Publication number 20230422478
- Publication date Dec 28, 2023
- Changxin Memory Technologies, Inc.
- Kang YOU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20230422466
- Publication date Dec 28, 2023
- Changxin Memory Technologies, Inc.
- Deyuan XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTO...
- Publication number 20230413520
- Publication date Dec 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...
- Publication number 20230413513
- Publication date Dec 21, 2023
- CHANGXIN MEMORY TECHNOLIGIES, INC.
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230413536
- Publication date Dec 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guangsu SHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230413537
- Publication date Dec 21, 2023
- Changxin Memory Technologies, Inc.
- Guangsu SHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE, ALTERNATING EPITAXIAL SILICON
- Publication number 20230397392
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- John F. Kaeding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230397400
- Publication date Dec 7, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVIC...
- Publication number 20230397390
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- David K. Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH WORD LINES
- Publication number 20230397409
- Publication date Dec 7, 2023
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME
- Publication number 20230389293
- Publication date Nov 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Min LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230389278
- Publication date Nov 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- YOUMING LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...
- Publication number 20230389279
- Publication date Nov 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230386845
- Publication date Nov 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230387008
- Publication date Nov 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yongxiang LI
- H01 - BASIC ELECTRIC ELEMENTS

with at least one step of making a word line

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure having a landing area extends from first po...

Memory device having a channel provided on a memory unit

Devices having a transistor and a capacitor along a common horizont...

DRAM with selective epitaxial cell transistor

Semiconductor memory device and method of fabricating the same

Method of testing a gap fill for DRAM

Buried word line structure and manufacturing method thereof

Dynamic random access memory and method for manufacturing the dram...

Semiconductor structure

Method for preparing semiconductor memory device with air gaps betw...

Low resistivity DRAM buried word line stack

DRAM memory device having angled structures with sidewalls extendin...

Apparatuses including passing word lines comprising a band offset m...

Stacked-substrate DRAM semiconductor devices

Semiconductor structure and manufacturing method thereof

Semiconductor structure with vertical gate transistor

Method of manufacturing semiconductor device having buried word line

Reducing gate induced drain leakage in DRAM wordline

Transistors, arrays of transistors, arrays of memory cells individu...

Memory devices and methods of fabricating the same

Structures and methods for memory cells

Semiconductor device with air gap and method for fabricating the same

Method for fabricating a semiconductor device with array region and...

Semiconductor structure formation at differential depths

Semiconductor structure and manufacturing method thereof

Integrated assemblies, and methods of forming integrated assemblies

Integrated circuit device with ion doped regions that provide dopan...

Semiconductor device and method of forming the same

Semiconductor device and method for fabricating the same

Vertical three-dimensional memory with vertical channel

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

SUPPORT PILLARS WITH MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HO...

STRUCTURES FOR WORD LINE MULTIPLEXING IN THREE-DIMENSIONAL MEMORY A...

SEMICONDUCTOR DEVICE HAVING BONDING STRUCTURE AND METHOD OF MANUFAC...

LANTHANUM NITRIDE AS A DRAM MOLYBDENUM LINER

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Memory device having word line surrounding gate structure and manuf...

SEMICONDUCTOR MEMORY DEVICE AND FORMING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE HAVING AIR GAP

SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTO...

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

MULTIPLE, ALTERNATING EPITAXIAL SILICON

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVIC...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH WORD LINES

SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF