with charge trapping gate insulator

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H01L27/11563

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/11563with charge trapping gate insulator

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods of fabrication
- Patent number 11,626,424
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,621,278
- Issue date Apr 4, 2023
- Kioxia Corporation
- Toshifumi Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded SONOS and high voltage select gate with a high-K metal gat...
- Patent number 11,610,820
- Issue date Mar 21, 2023
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory device containing lattice-ma...
- Patent number 11,594,553
- Issue date Feb 28, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,581,332
- Issue date Feb 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pad structure and manufacturing method thereof in semiconductor device
- Patent number 11,574,882
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor method for manufacturing a device including silicides...
- Patent number 11,563,020
- Issue date Jan 24, 2023
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with ferroelectricity
- Patent number 11,532,641
- Issue date Dec 20, 2022
- SK hynix Inc.
- In Ku Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing memory structure
- Patent number 11,508,739
- Issue date Nov 22, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Hui-Chin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 11,456,365
- Issue date Sep 27, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electrostatic catalysis
- Patent number 11,437,476
- Issue date Sep 6, 2022
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid memory structure
- Patent number 11,437,347
- Issue date Sep 6, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Chen-Liang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,411,016
- Issue date Aug 9, 2022
- Kioxia Corporation
- Tomoya Sanuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array having connections going through control gates
- Patent number 11,398,489
- Issue date Jul 26, 2022
- Micron Technology, Inc.
- Toru Tanzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,315,950
- Issue date Apr 26, 2022
- Kioxia Corporation
- Toshifumi Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erasable programmable non-volatile memory
- Patent number 11,316,011
- Issue date Apr 26, 2022
- eMemory Technology Inc.
- Wein-Town Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 11,309,322
- Issue date Apr 19, 2022
- Kioxia Corporation
- Ryota Fujitsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including ferroelectric film and method of man...
- Patent number 11,289,510
- Issue date Mar 29, 2022
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sonos stack with split nitride memory layer
- Patent number 11,257,912
- Issue date Feb 22, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic catalysis
- Patent number 11,251,277
- Issue date Feb 15, 2022
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with isolated well region and associated non-volatile m...
- Patent number 11,245,004
- Issue date Feb 8, 2022
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,227,934
- Issue date Jan 18, 2022
- Kioxia Corporation
- Mitsuo Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory with improved gate structure and a method of creating...
- Patent number 11,217,596
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chieh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-dimensional NOR string arrays in segmented stacks
- Patent number 11,180,861
- Issue date Nov 23, 2021
- SUNRISE MEMORY CORPORATION
- Eli Harari
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Flash memory with improved gate structure and a method of creating...
- Patent number 11,171,147
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chieh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device and method
- Patent number 11,056,565
- Issue date Jul 6, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,004,861
- Issue date May 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor wafer, and electronic device
- Patent number 10,998,447
- Issue date May 4, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Tatsuya Onuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and precursors for manufacturing 3D devices
- Patent number 10,985,013
- Issue date Apr 20, 2021
- VERSUM MATERIALS US, LLC
- Jianheng Li
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of fabricating a flash memory
- Patent number 10,916,634
- Issue date Feb 9, 2021
- United Microelectronics Corp.
- Wei Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY SYSTEM AND PROCESSING METHOD OF MEMORY SYSTEM
- Publication number 20230282289
- Publication date Sep 7, 2023
- KIOXIA Corporation
- Tomoya SANUKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20230074522
- Publication date Mar 9, 2023
- SK HYNIX INC.
- In Ku KANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20230023852
- Publication date Jan 26, 2023
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
OPERATION METHOD OF MULTI-BITS READ ONLY MEMORY
- Publication number 20220343986
- Publication date Oct 27, 2022
- Chen-Feng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPERATION METHOD OF MULTI-BITS READ ONLY MEMORY
- Publication number 20220328115
- Publication date Oct 13, 2022
- Chen-Feng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220216232
- Publication date Jul 7, 2022
- KIOXIA Corporation
- Toshifumi MINAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER
- Publication number 20220173216
- Publication date Jun 2, 2022
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220165743
- Publication date May 26, 2022
- RENESAS ELECTRONICS CORPORATION
- Satoru MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC CATALYSIS
- Publication number 20220149162
- Publication date May 12, 2022
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MEMORY STRUCTURE
- Publication number 20220068878
- Publication date Mar 3, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Chen-Liang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-DIMENSIONAL NOR STRING ARRAYS IN SEGMENTED STACKS
- Publication number 20220025532
- Publication date Jan 27, 2022
- SUNRISE MEMORY CORPORATION
- Eli Harari
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20220005929
- Publication date Jan 6, 2022
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING MEMORY STURCTURE
- Publication number 20210320113
- Publication date Oct 14, 2021
- Powerchip Semiconductor Manufacturing Corporation
- Hui-Chin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded Flash Memory Device with Floating Gate Embedded in a Subst...
- Publication number 20210233921
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20210217862
- Publication date Jul 15, 2021
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY CELL WITH ISOLATED WELL REGION AND ASSOCIATED NON-VOLATILE M...
- Publication number 20210183998
- Publication date Jun 17, 2021
- EMEMORY TECHNOLOGY INC.
- Hsueh-Wei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210083069
- Publication date Mar 18, 2021
- KIOXIA Corporation
- Mitsuo IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER
- Publication number 20210074822
- Publication date Mar 11, 2021
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20210066321
- Publication date Mar 4, 2021
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- JungWook LIM
- G11 - INFORMATION STORAGE
Information Patent Application
PAD STRUCTURE AND MANUFACTURING METHOD THEREOF IN SEMICONDUCTOR DEVICE
- Publication number 20210050314
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20200411551
- Publication date Dec 31, 2020
- Toshiba Memory Corporation
- Toshifumi MINAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC CATALYSIS
- Publication number 20200411650
- Publication date Dec 31, 2020
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A FLASH MEMORY
- Publication number 20200373164
- Publication date Nov 26, 2020
- UNITED MICROELECTRONICS CORP.
- WEI XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SONOS AND HIGH VOLTAGE SELECT GATE WITH A HIGH-K METAL GAT...
- Publication number 20200350213
- Publication date Nov 5, 2020
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20200303393
- Publication date Sep 24, 2020
- Toshiba Memory Corporation
- Ryota Fujitsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20200152752
- Publication date May 14, 2020
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of ONO Stack Formation
- Publication number 20200111805
- Publication date Apr 9, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONVEX SHAPED THIN-FILM TRANSISTOR DEVICE HAVING ELONGATED CHANNEL...
- Publication number 20200105779
- Publication date Apr 2, 2020
- MONTEREY RESEARCH, LLC
- Yukio HAYAKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY WITH IMPROVED GATE STRUCTURE AND A METHOD OF CREATING...
- Publication number 20200098768
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- SHENG-CHIEH CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PAD STRUCTURE AND MANUFACTURING METHOD THEREOF IN SEMICONDUCTOR DEVICE
- Publication number 20200091096
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS

with charge trapping gate insulator

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices and methods of fabrication

Semiconductor memory device

Embedded SONOS and high voltage select gate with a high-K metal gat...

Three-dimensional ferroelectric memory device containing lattice-ma...

Three-dimensional memory devices and fabrication methods thereof

Pad structure and manufacturing method thereof in semiconductor device

Semiconductor method for manufacturing a device including silicides...

Semiconductor device with ferroelectricity

Method of manufacturing memory structure

Memory transistor with multiple charge storing layers and a high wo...

Electrostatic catalysis

Hybrid memory structure

Semiconductor memory device

Memory array having connections going through control gates

Semiconductor memory device

Erasable programmable non-volatile memory

Semiconductor memory device

Semiconductor device including ferroelectric film and method of man...

Sonos stack with split nitride memory layer

Electrostatic catalysis

Memory cell with isolated well region and associated non-volatile m...

Semiconductor device and method for manufacturing the same

Flash memory with improved gate structure and a method of creating...

3-dimensional NOR string arrays in segmented stacks

Flash memory with improved gate structure and a method of creating...

Flash memory device and method

Three-dimensional memory devices and fabrication methods thereof

Semiconductor device, semiconductor wafer, and electronic device

Method and precursors for manufacturing 3D devices

Method of fabricating a flash memory

Patents Applicationslast 30 patents

MEMORY SYSTEM AND PROCESSING METHOD OF MEMORY SYSTEM

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

OPERATION METHOD OF MULTI-BITS READ ONLY MEMORY

OPERATION METHOD OF MULTI-BITS READ ONLY MEMORY

SEMICONDUCTOR MEMORY DEVICE

SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

ELECTROSTATIC CATALYSIS

HYBRID MEMORY STRUCTURE

3-DIMENSIONAL NOR STRING ARRAYS IN SEGMENTED STACKS

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

METHOD OF MANUFACTURING MEMORY STURCTURE

Embedded Flash Memory Device with Floating Gate Embedded in a Subst...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

MEMORY CELL WITH ISOLATED WELL REGION AND ASSOCIATED NON-VOLATILE M...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER

MEMORY DEVICE

PAD STRUCTURE AND MANUFACTURING METHOD THEREOF IN SEMICONDUCTOR DEVICE

SEMICONDUCTOR MEMORY DEVICE

ELECTROSTATIC CATALYSIS

METHOD OF FABRICATING A FLASH MEMORY

EMBEDDED SONOS AND HIGH VOLTAGE SELECT GATE WITH A HIGH-K METAL GAT...

SEMICONDUCTOR MEMORY DEVICE

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

Method of ONO Stack Formation

CONVEX SHAPED THIN-FILM TRANSISTOR DEVICE HAVING ELONGATED CHANNEL...

FLASH MEMORY WITH IMPROVED GATE STRUCTURE AND A METHOD OF CREATING...

PAD STRUCTURE AND MANUFACTURING METHOD THEREOF IN SEMICONDUCTOR DEVICE