with floating gate

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CPC
H01L29/788

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/788with floating gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory device having 2-transistor memory cell and access line plate
- Patent number 12,266,660
- Issue date Apr 1, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type semiconductor devices and methods of manufacturing th...
- Patent number 12,262,537
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Eun-Taek Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,228
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Chung Jen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method including memory device having 2-transistor ve...
- Patent number 12,256,541
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device and fabrication method thereof
- Patent number 12,249,647
- Issue date Mar 11, 2025
- United Microelectronics Corp.
- Chih-Chien Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,249,657
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chu Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Neural network classifier using array of three-gate non-volatile me...
- Patent number 12,249,368
- Issue date Mar 11, 2025
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming memory transistor with sacrificial polysilicon layer
- Patent number 12,250,813
- Issue date Mar 11, 2025
- Kabushiki Kaisha Toshiba
- Yu Nakane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate based 3-terminal analog synapse device
- Patent number 12,237,426
- Issue date Feb 25, 2025
- Korea Advanced Institute of Science and Technology
- Shinhyun Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor devices and manufacturing methods of the same
- Patent number 12,225,725
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- So Hyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 12,223,994
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device with three dimensional half flash structure and...
- Patent number 12,218,253
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory and methods of forming the same
- Patent number 12,219,765
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor structure
- Patent number 12,206,010
- Issue date Jan 21, 2025
- Winbond Electronics Corp.
- Shu-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Input function circuit block and output neuron circuit block couple...
- Patent number 12,200,926
- Issue date Jan 14, 2025
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Flash memory device including a buried floating gate and a buried e...
- Patent number 12,199,159
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and method for manufacturin...
- Patent number 12,193,226
- Issue date Jan 7, 2025
- Kioxia Corporation
- Keiichi Sawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch method for opening a source line in flash memory
- Patent number 12,193,227
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having an electrically floating body tr...
- Patent number 12,185,523
- Issue date Dec 31, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having vertically-spaced channel material seg...
- Patent number 12,185,544
- Issue date Dec 31, 2024
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device having floating gate with protruding str...
- Patent number 12,185,532
- Issue date Dec 31, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device
- Patent number 12,183,833
- Issue date Dec 31, 2024
- Winbond Electronics Corp.
- Cheng-Ta Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-volatile memory cell and manufacturin...
- Patent number 12,176,402
- Issue date Dec 24, 2024
- SK keyfoundry Inc.
- Min Kuck Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with an air gap and method of forming the same
- Patent number 12,176,440
- Issue date Dec 24, 2024
- Winbond Electronics Corp.
- Shang-Rong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with semiconductor layer on isolation structure
- Patent number 12,178,048
- Issue date Dec 24, 2024
- Kioxia Corporation
- Takenori Kodama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,167,594
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Chin Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device including a semiconductor layer within a trench a...
- Patent number 12,166,068
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Ralph N. Wall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing a 3D semiconductor memory device and structure
- Patent number 12,154,817
- Issue date Nov 26, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 12,148,808
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect measurement method
- Patent number 12,142,537
- Issue date Nov 12, 2024
- National Tsing Hua University
- Burn-Jeng Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRO...
- Publication number 20250072214
- Publication date Feb 27, 2025
- SONY GROUP CORPORATION
- Hitoshi Tsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250069677
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SYNAPTIC TRANSISTOR
- Publication number 20250056845
- Publication date Feb 13, 2025
- Kookmin University Industry Academy Cooperation Foundation
- Dae Hwan KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...
- Publication number 20250054546
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH NON-VOLATILE MEMORY CELL AND MANUFACTURIN...
- Publication number 20250056863
- Publication date Feb 13, 2025
- SK keyfoundry Inc.
- Min Kuck CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING STACK STRUCTURE HAVING GATE REGION...
- Publication number 20250031364
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Geunwon Lim
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH AUXILIARY SELECT GATE LINE DRIVER
- Publication number 20250022511
- Publication date Jan 16, 2025
- EMEMORY TECHNOLOGY INC.
- Wei-Chiang ONG
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAME
- Publication number 20250014646
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Won-bo SHIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250017004
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YAO KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROTECTING DATA STORED IN A MEMORY, AND CORRESPONDING IN...
- Publication number 20250015016
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Pascal Fornara
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND MEMORY...
- Publication number 20250006544
- Publication date Jan 2, 2025
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
NEURON METAL OXIDE SEMICONDUCTOR DEVICES AND CIRCUITS FABRICATED WI...
- Publication number 20240428062
- Publication date Dec 26, 2024
- FLASHSILICON INCORPORATION
- Lee WANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20240429086
- Publication date Dec 26, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING MASK, AND METHOD FOR MANUFACTURING SEMICONDU...
- Publication number 20240402587
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Joong Un Park
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY CELLS AND MULTIPL...
- Publication number 20240404866
- Publication date Dec 5, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING PROGRAMMABLE MEMORY
- Publication number 20240397712
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY UNIT CELL AND ARRAY ARCHITECTURE
- Publication number 20240397711
- Publication date Nov 28, 2024
- ANAFLASH INC.
- Sihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION
- Publication number 20240395326
- Publication date Nov 28, 2024
- Micron Technology, Inc.
- Paolo Tessariol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING A 3D SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE
- Publication number 20240395592
- Publication date Nov 28, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM STACK SIMPLIFICATION FOR HIGH ASPECT RATIO PATTERNING AND VERT...
- Publication number 20240387258
- Publication date Nov 21, 2024
- LAM RESEARCH CORPORATION
- Hui-Jung Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240387749
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY LAYOUT TO ELIMINATE FLOATING GATE BRIDGE
- Publication number 20240389314
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Neng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING THE SAME
- Publication number 20240387748
- Publication date Nov 21, 2024
- WINBOND ELECTRONICS CORP.
- Ying-Chang WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Containing Ferroelectric Transistors, and Met...
- Publication number 20240385713
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Pankaj Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory Device Formed On Silicon-On-Insulator Substrate, And Method...
- Publication number 20240389319
- Publication date Nov 21, 2024
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY CELL
- Publication number 20240389320
- Publication date Nov 21, 2024
- Fuh-cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER FLASH AND METHOD FOR MANUFACTURING SAME
- Publication number 20240379879
- Publication date Nov 14, 2024
- Shanghai Huali Integrated Circuit Corporation
- Caiyun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TYPE HIGH VOLTAGE DEVICES FABRICATION FOR EMBEDDED MEMORY
- Publication number 20240373627
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY
- Publication number 20240373628
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Tuo Huang
- H01 - BASIC ELECTRIC ELEMENTS

with floating gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device having 2-transistor memory cell and access line plate

Vertical type semiconductor devices and methods of manufacturing th...

Semiconductor device

Apparatus and method including memory device having 2-transistor ve...

Power device and fabrication method thereof

Semiconductor device

Neural network classifier using array of three-gate non-volatile me...

Method of forming memory transistor with sacrificial polysilicon layer

Floating gate based 3-terminal analog synapse device

Semiconductor devices and manufacturing methods of the same

Memory arrays, ferroelectric transistors, and methods of reading an...

Flash memory device with three dimensional half flash structure and...

Three dimensional memory and methods of forming the same

Method for forming a semiconductor structure

Input function circuit block and output neuron circuit block couple...

Flash memory device including a buried floating gate and a buried e...

Nonvolatile semiconductor memory device and method for manufacturin...

Etch method for opening a source line in flash memory

Semiconductor memory device having an electrically floating body tr...

Integrated assemblies having vertically-spaced channel material seg...

Structure of memory device having floating gate with protruding str...

Flash memory device

Semiconductor device with non-volatile memory cell and manufacturin...

Semiconductor structure with an air gap and method of forming the same

Memory device with semiconductor layer on isolation structure

Semiconductor device and manufacturing method thereof

Electronic device including a semiconductor layer within a trench a...

Methods for producing a 3D semiconductor memory device and structure

Memory device

Defect measurement method

Patents Applicationslast 30 patents

DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRO...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SYNAPTIC TRANSISTOR

TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...

SEMICONDUCTOR DEVICE WITH NON-VOLATILE MEMORY CELL AND MANUFACTURIN...

SEMICONDUCTOR DEVICES INCLUDING STACK STRUCTURE HAVING GATE REGION...

NON-VOLATILE MEMORY WITH AUXILIARY SELECT GATE LINE DRIVER

NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

METHOD FOR PROTECTING DATA STORED IN A MEMORY, AND CORRESPONDING IN...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND MEMORY...

NEURON METAL OXIDE SEMICONDUCTOR DEVICES AND CIRCUITS FABRICATED WI...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

METHOD FOR FABRICATING MASK, AND METHOD FOR MANUFACTURING SEMICONDU...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY CELLS AND MULTIPL...

METHOD FOR FORMING PROGRAMMABLE MEMORY

NONVOLATILE MEMORY UNIT CELL AND ARRAY ARCHITECTURE

MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION

METHODS FOR PRODUCING A 3D SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE

FILM STACK SIMPLIFICATION FOR HIGH ASPECT RATIO PATTERNING AND VERT...

TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

FLASH MEMORY LAYOUT TO ELIMINATE FLOATING GATE BRIDGE

SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING THE SAME

Integrated Assemblies Containing Ferroelectric Transistors, and Met...

Memory Device Formed On Silicon-On-Insulator Substrate, And Method...

NON-VOLATILE MEMORY CELL

SUPER FLASH AND METHOD FOR MANUFACTURING SAME

MULTI-TYPE HIGH VOLTAGE DEVICES FABRICATION FOR EMBEDDED MEMORY

STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY