with initial gate mask or masking layer complementary to the prospective gate location

Industry

CPC
H01L29/66583

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66583with initial gate mask or masking layer complementary to the prospective gate location

Industries

Patents Grantslast 30 patents

Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 12,068,393
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,948,977
- Issue date Apr 2, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial self-aligned contact for MOL
- Patent number 11,887,890
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and manufacturing method thereof
- Patent number 11,848,380
- Issue date Dec 19, 2023
- Sony Group Corporation
- Koichi Amari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with air-spacer
- Patent number 11,830,922
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process comprising an operation of defining an effectiv...
- Patent number 11,424,342
- Issue date Aug 23, 2022
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,398,554
- Issue date Jul 26, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 11,380,774
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three part source/drain region structure for transistor
- Patent number 11,329,158
- Issue date May 10, 2022
- GLOBALFOUNDRIES U.S. INC.
- Halting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial self-aligned contact for MOL
- Patent number 11,239,115
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming same
- Patent number 11,211,260
- Issue date Dec 28, 2021
- Semiconductor Manufacturing (Shanghai) International Corporation
- Zhang Cheng Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of FinFET contact formation
- Patent number 11,205,596
- Issue date Dec 21, 2021
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with air-spacer
- Patent number 11,201,228
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and manufacturing method thereof
- Patent number 11,043,590
- Issue date Jun 22, 2021
- Sony Corporation
- Koichi Amari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure over active gate and method to fabricate same
- Patent number 11,004,739
- Issue date May 11, 2021
- Intel Corporation
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 10,879,370
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and manufacturing method thereof
- Patent number 10,727,335
- Issue date Jul 28, 2020
- Sony Corporation
- Koichi Amari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely thin silicon-on-insulator silicon germanium device withou...
- Patent number 10,658,387
- Issue date May 19, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low band gap semiconductor devices having reduced gate induced drai...
- Patent number 10,580,882
- Issue date Mar 3, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with air-spacer
- Patent number 10,522,642
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with self-aligned contacts
- Patent number 10,497,798
- Issue date Dec 3, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer for dielectric layers in semiconductor devices
- Patent number 10,453,933
- Issue date Oct 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Wen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely thin silicon-on-insulator silicon germanium device withou...
- Patent number 10,340,292
- Issue date Jul 2, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical FinFET device having self-aligned contacts
- Patent number 10,312,154
- Issue date Jun 4, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of forming same
- Patent number 10,269,908
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure over active gate and method to fabricate same
- Patent number 10,192,783
- Issue date Jan 29, 2019
- Intel Corporation
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned contact with spacer first
- Patent number 10,186,599
- Issue date Jan 22, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous source drain region and extension region
- Patent number 10,170,587
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having local buried oxide
- Patent number 10,170,315
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous source drain region and extension region
- Patent number 10,158,001
- Issue date Dec 18, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE
- Publication number 20240371973
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
- Publication number 20240088290
- Publication date Mar 14, 2024
- SONY GROUP CORPORATION
- Koichi Amari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Air-Spacer
- Publication number 20230387247
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE
- Publication number 20220328632
- Publication date Oct 13, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching Back and Selective Deposition of Metal Gate
- Publication number 20220278224
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial Self-Aligned Contact for MOL
- Publication number 20220108923
- Publication date Apr 7, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE PART SOURCE/DRAIN REGION STRUCTURE FOR TRANSISTOR
- Publication number 20210320207
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Air-Spacer
- Publication number 20210273071
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME
- Publication number 20210210385
- Publication date Jul 8, 2021
- Intel Corporation
- Abhijit Jayant PETHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial Self-Aligned Contact for MOL
- Publication number 20210134671
- Publication date May 6, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20210050225
- Publication date Feb 18, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhang Cheng LONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION PROCESS COMPRISING AN OPERATION OF DEFINING AN EFFECTIV...
- Publication number 20210036126
- Publication date Feb 4, 2021
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
- Publication number 20200303546
- Publication date Sep 24, 2020
- SONY CORPORATION
- Koichi Amari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Air-Spacer
- Publication number 20200127110
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching Back and Selective Deposition of Metal Gate
- Publication number 20200083351
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED CONTACTS
- Publication number 20190252267
- Publication date Aug 15, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME
- Publication number 20190115257
- Publication date Apr 18, 2019
- Intel Corporation
- Abhijit Jayant PETHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS FOR VERTICAL FIELD EFFECT TRANSISTOR CELL HEI...
- Publication number 20190088764
- Publication date Mar 21, 2019
- GLBOALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW BAND GAP SEMICONDUCTOR DEVICES HAVING REDUCED GATE INDUCED DRAI...
- Publication number 20190058053
- Publication date Feb 21, 2019
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Self-Aligned Contact with Spacer First
- Publication number 20190027580
- Publication date Jan 24, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOU...
- Publication number 20190019811
- Publication date Jan 17, 2019
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET and Method of Forming Same
- Publication number 20180350926
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching Back and Selective Deposition of Metal Gate
- Publication number 20180175165
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Air-Spacer
- Publication number 20180166553
- Publication date Jun 14, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE
- Publication number 20180145135
- Publication date May 24, 2018
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FINFET CONTACT FORMATION
- Publication number 20180144990
- Publication date May 24, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180076289
- Publication date Mar 15, 2018
- Toyota Jidosha Kabushiki Kaisha
- Yuto KUROKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET and Method of Forming Same
- Publication number 20180040703
- Publication date Feb 8, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Contact
- Publication number 20170365691
- Publication date Dec 21, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND METHOD FOR FORMI...
- Publication number 20170256629
- Publication date Sep 7, 2017
- Kabushiki Kaisha Toshiba
- Masafumi HAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS

with initial gate mask or masking layer complementary to the prospective gate location

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Etching back and selective deposition of metal gate

Silicon on insulator device with partially recessed gate

Partial self-aligned contact for MOL

Semiconductor component and manufacturing method thereof

Semiconductor device with air-spacer

Fabrication process comprising an operation of defining an effectiv...

Silicon on insulator device with partially recessed gate

Etching back and selective deposition of metal gate

Three part source/drain region structure for transistor

Partial self-aligned contact for MOL

Semiconductor structure and method for forming same

Method of FinFET contact formation

Semiconductor device with air-spacer

Semiconductor component and manufacturing method thereof

Gate contact structure over active gate and method to fabricate same

Etching back and selective deposition of metal gate

Semiconductor component and manufacturing method thereof

Extremely thin silicon-on-insulator silicon germanium device withou...

Low band gap semiconductor devices having reduced gate induced drai...

Semiconductor device with air-spacer

Vertical field effect transistor with self-aligned contacts

Barrier layer for dielectric layers in semiconductor devices

Extremely thin silicon-on-insulator silicon germanium device withou...

Method of forming vertical FinFET device having self-aligned contacts

FinFET and method of forming same

Gate contact structure over active gate and method to fabricate same

Forming self-aligned contact with spacer first

Heterogeneous source drain region and extension region

Semiconductor device having local buried oxide

Heterogeneous source drain region and extension region

Patents Applicationslast 30 patents

ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE

SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF

Semiconductor Device with Air-Spacer

SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE

Etching Back and Selective Deposition of Metal Gate

Partial Self-Aligned Contact for MOL

THREE PART SOURCE/DRAIN REGION STRUCTURE FOR TRANSISTOR

Semiconductor Device with Air-Spacer

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

Partial Self-Aligned Contact for MOL

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

FABRICATION PROCESS COMPRISING AN OPERATION OF DEFINING AN EFFECTIV...

SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF

Semiconductor Device with Air-Spacer

Etching Back and Selective Deposition of Metal Gate

VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED CONTACTS

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

SELF-ALIGNED CONTACTS FOR VERTICAL FIELD EFFECT TRANSISTOR CELL HEI...

LOW BAND GAP SEMICONDUCTOR DEVICES HAVING REDUCED GATE INDUCED DRAI...

Forming Self-Aligned Contact with Spacer First

EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOU...

FinFET and Method of Forming Same

Etching Back and Selective Deposition of Metal Gate

Semiconductor Device with Air-Spacer

SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE

METHOD OF FINFET CONTACT FORMATION

SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME

FinFET and Method of Forming Same

Method of Forming a Contact

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND METHOD FOR FORMI...