with means to absorb or localize unwanted impurities or defects from semiconductors

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CPC
Y10S257/913

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

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Y10S257/913with means to absorb or localize unwanted impurities or defects from semiconductors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Removal of impurities from semiconductor device layers
- Patent number 8,227,299
- Issue date Jul 24, 2012
- IMEC
- Eddy Simoen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 7,821,005
- Issue date Oct 26, 2010
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Wafer-level packaging of micro devices
- Patent number 7,763,962
- Issue date Jul 27, 2010
- Spatial Photonics, Inc.
- Shaoher X. Pan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device and method for fabricating same
- Patent number 7,755,085
- Issue date Jul 13, 2010
- Sharp Kabushiki Kaisha
- Mitsuhiro Takahi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform minority carrier lifetime distributions in high perform...
- Patent number 7,618,879
- Issue date Nov 17, 2009
- MEMC Electronics Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering using voids formed by surface transformation
- Patent number 7,564,082
- Issue date Jul 21, 2009
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering using voids formed by surface transformation
- Patent number 7,544,984
- Issue date Jun 9, 2009
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state image device
- Patent number 7,459,735
- Issue date Dec 2, 2008
- Sony Corporation
- Takayuki Ezaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,397,063
- Issue date Jul 8, 2008
- Mitsubishi Denki Kabushiki Kaisha
- Yasuyoshi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering using voids formed by surface transformation
- Patent number 7,326,597
- Issue date Feb 5, 2008
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making non-uniform minority carrier lifetime distributi...
- Patent number 7,242,037
- Issue date Jul 10, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,141,822
- Issue date Nov 28, 2006
- Semiconductor Energy Laboratory Co., Ltd.
- Osamu Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing impurities of a semiconductor wafer, semiconduc...
- Patent number 7,126,194
- Issue date Oct 24, 2006
- Hyogo Prefecture
- Seigo Kishino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a dielectric layer having a getterin...
- Patent number 7,045,418
- Issue date May 16, 2006
- Texas Instruments Incorporated
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device that includes selectiv...
- Patent number 7,045,444
- Issue date May 16, 2006
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protected organic electronic device structures incorporating pressu...
- Patent number 6,998,648
- Issue date Feb 14, 2006
- Universal Display Corporation
- Jeffrey Alan Silvernail
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic control device
- Patent number 6,967,391
- Issue date Nov 22, 2005
- Denso Corporation
- Mitsuhiro Kanayama
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Epitaxial silicon wafer with intrinsic gettering and a method for t...
- Patent number 6,958,092
- Issue date Oct 25, 2005
- MEMC Electronic Materials, Inc.
- Gregory M. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,946,711
- Issue date Sep 20, 2005
- Denso Corporation
- Mikimasa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering using voids formed by surface transformation
- Patent number 6,929,984
- Issue date Aug 16, 2005
- Micron Technology Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device layer of a silicon-on-insulator structure having vacancy dom...
- Patent number 6,849,901
- Issue date Feb 1, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
- Patent number 6,849,119
- Issue date Feb 1, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform minority carrier lifetime distributions in high perform...
- Patent number 6,828,690
- Issue date Dec 7, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating electronic devices integrated in semiconducto...
- Patent number 6,709,955
- Issue date Mar 23, 2004
- STMicroelectronics S.r.l.
- Mario Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ruthenium interconnect for an integrated circuit
- Patent number 6,664,175
- Issue date Dec 16, 2003
- Micron Technology, Inc.
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried boron and carbon regions, and me...
- Patent number 6,635,950
- Issue date Oct 21, 2003
- Hitachi, Ltd.
- Hidetsugu Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating silicon wafer having an asymmetrical vac...
- Patent number 6,586,068
- Issue date Jul 1, 2003
- MEMC Electronic Materials, Inc.
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-gettering method used in the manufacture of crystalline-Si TFT
- Patent number 6,551,907
- Issue date Apr 22, 2003
- Semiconductor Energy Laboratory Co., Ltd.
- Hisashi Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial silicon wafer with intrinsic gettering and a method for t...
- Patent number 6,537,655
- Issue date Mar 25, 2003
- MEMC Electronic Materials, Inc.
- Gregory M. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...
- Patent number 6,537,368
- Issue date Mar 25, 2003
- MEMC Electronic Materials SpA
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REMOVAL OF IMPURITIES FROM SEMICONDUCTOR DEVICE LAYERS
- Publication number 20090273010
- Publication date Nov 5, 2009
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Eddy Simoen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME
- Publication number 20090102024
- Publication date Apr 23, 2009
- Sharp Kabushiki Kaisha
- Mitsuhiro Takahi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER-LEVEL PACKAGING OF MICRO DEVICES
- Publication number 20080111203
- Publication date May 15, 2008
- SPATIAL PHOTONICS, INC.
- Shaoher X. Pan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEV...
- Publication number 20080020168
- Publication date Jan 24, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORM...
- Publication number 20070238266
- Publication date Oct 11, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gettering using voids formed by surface transformation
- Publication number 20070080335
- Publication date Apr 12, 2007
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gettering using voids formed by surface transformation
- Publication number 20070075401
- Publication date Apr 5, 2007
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20070037309
- Publication date Feb 15, 2007
- Semiconductor Energy Laboratory Co., Ltd.
- Osamu Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device and semiconductor device
- Publication number 20060255370
- Publication date Nov 16, 2006
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gettering using voids formed by surface transformation
- Publication number 20050250274
- Publication date Nov 10, 2005
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid-state image device and production method thereof
- Publication number 20050179053
- Publication date Aug 18, 2005
- Sony Corporation
- Takayuki Ezaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for implementing oxygen into a silicon wafer having a regio...
- Publication number 20050130394
- Publication date Jun 16, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial silicon wafer with intrinsic gettering and a method for t...
- Publication number 20050098092
- Publication date May 12, 2005
- MEMC Electronic Materials, Inc.
- Gregory M. Wilson
- C30 - CRYSTAL GROWTH
Information Patent Application
Protected organic electronic device structures incorporating pressu...
- Publication number 20050045900
- Publication date Mar 3, 2005
- Universal Display Corporation
- Jeffrey Alan Silvernail
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050045880
- Publication date Mar 3, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Yasuyoshi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gettering using voids formed by surface transformation
- Publication number 20050029683
- Publication date Feb 10, 2005
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gettering using voids formed by surface transformation
- Publication number 20050017273
- Publication date Jan 27, 2005
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for making non-uniform minority carrier lifetime distributi...
- Publication number 20050006796
- Publication date Jan 13, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a dielectric layer having a getterin...
- Publication number 20040178438
- Publication date Sep 16, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Jozef Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic control device
- Publication number 20040169294
- Publication date Sep 2, 2004
- Mitsuhiro Kanayama
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Method for removing impurities of a semiconductor wafer, semiconduc...
- Publication number 20040150087
- Publication date Aug 5, 2004
- HYOGO PREFECTURE
- Seigo Kishino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
- Publication number 20030196586
- Publication date Oct 23, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device and semiconductor device
- Publication number 20030122129
- Publication date Jul 3, 2003
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030003692
- Publication date Jan 2, 2003
- Mikimasa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ruthenium interconnect for an integrated circuit and method for its...
- Publication number 20020158336
- Publication date Oct 31, 2002
- Micron Technology, Inc.
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20020125480
- Publication date Sep 12, 2002
- Semiconductor Energy Laboratory Co., Ltd.
- Osamu Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon on insulator structure having a low defect density device l...
- Publication number 20020113265
- Publication date Aug 22, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
SOI semiconductor device capable of preventing floating body effect
- Publication number 20020040998
- Publication date Apr 11, 2002
- Hyundai Electronics Industries, Co., Ltd.
- Jong Wook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...
- Publication number 20020026893
- Publication date Mar 7, 2002
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gettering regions and methods of forming gettering regions within a...
- Publication number 20020022346
- Publication date Feb 21, 2002
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS

with means to absorb or localize unwanted impurities or defects from semiconductors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Removal of impurities from semiconductor device layers

Method of manufacturing semiconductor device and semiconductor device

Wafer-level packaging of micro devices

Semiconductor device and method for fabricating same

Non-uniform minority carrier lifetime distributions in high perform...

Gettering using voids formed by surface transformation

Gettering using voids formed by surface transformation

Solid-state image device

Semiconductor device

Gettering using voids formed by surface transformation

Process for making non-uniform minority carrier lifetime distributi...

Semiconductor device and method for manufacturing the same

Method for removing impurities of a semiconductor wafer, semiconduc...

Semiconductor device including a dielectric layer having a getterin...

Method of manufacturing semiconductor device that includes selectiv...

Protected organic electronic device structures incorporating pressu...

Electronic control device

Epitaxial silicon wafer with intrinsic gettering and a method for t...

Semiconductor device

Gettering using voids formed by surface transformation

Device layer of a silicon-on-insulator structure having vacancy dom...

Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...

Non-uniform minority carrier lifetime distributions in high perform...

Method of fabricating electronic devices integrated in semiconducto...

Method of forming ruthenium interconnect for an integrated circuit

Semiconductor device having buried boron and carbon regions, and me...

Ideal oxygen precipitating silicon wafer having an asymmetrical vac...

Metal-gettering method used in the manufacture of crystalline-Si TFT

Epitaxial silicon wafer with intrinsic gettering and a method for t...

Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...

Patents Applicationslast 30 patents

REMOVAL OF IMPURITIES FROM SEMICONDUCTOR DEVICE LAYERS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME

WAFER-LEVEL PACKAGING OF MICRO DEVICES

SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEV...

NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORM...

Gettering using voids formed by surface transformation

Gettering using voids formed by surface transformation

Semiconductor device and method for manufacturing the same

Method of manufacturing semiconductor device and semiconductor device

Gettering using voids formed by surface transformation

Solid-state image device and production method thereof

Process for implementing oxygen into a silicon wafer having a regio...

Epitaxial silicon wafer with intrinsic gettering and a method for t...

Protected organic electronic device structures incorporating pressu...

Semiconductor device

Gettering using voids formed by surface transformation

Gettering using voids formed by surface transformation

Process for making non-uniform minority carrier lifetime distributi...

Semiconductor device including a dielectric layer having a getterin...

Electronic control device

Method for removing impurities of a semiconductor wafer, semiconduc...

Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device and method of manufacturing the same

Ruthenium interconnect for an integrated circuit and method for its...

Semiconductor device and method for manufacturing the same

Silicon on insulator structure having a low defect density device l...

SOI semiconductor device capable of preventing floating body effect

Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...

Gettering regions and methods of forming gettering regions within a...