with multiple gate, at least one gate being an insulated gate

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H01L29/66484

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66484with multiple gate, at least one gate being an insulated gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including strained transistor and method for m...
- Patent number 12,132,094
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 12,132,108
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor and method of manufacturing the same
- Patent number 12,125,907
- Issue date Oct 22, 2024
- Electronics and Telecommunications Research Institute
- Seong Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 12,113,106
- Issue date Oct 8, 2024
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate semiconductor structure and method of manufacturing the...
- Patent number 12,107,162
- Issue date Oct 1, 2024
- Winbond Electronics Corp.
- Hung-Yu Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,027,628
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Yan Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 12,027,623
- Issue date Jul 2, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate patterning process for multi-gate devices
- Patent number 12,021,132
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage devices and associated techniques and confi...
- Patent number 12,021,141
- Issue date Jun 25, 2024
- Sony Group Corporation
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated nanowire and nanoribbon patterning in transistor manufac...
- Patent number 12,014,959
- Issue date Jun 18, 2024
- Intel Corporation
- Leonard P Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,015,082
- Issue date Jun 18, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,978,772
- Issue date May 7, 2024
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,978,805
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Soonmoon Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 11,957,017
- Issue date Apr 9, 2024
- SHARP KABUSHIKI KAISHA
- Takayuki Nishiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,942,516
- Issue date Mar 26, 2024
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FeFET with double gate structure
- Patent number 11,923,458
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process window control for gate formation in semiconductor devices
- Patent number 11,908,903
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate devices with multi-layer inner spacers and fabrication m...
- Patent number 11,908,919
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 11,894,459
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,881,529
- Issue date Jan 23, 2024
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of long gate devices
- Patent number 11,855,175
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistors and memories having multi-gate transistors
- Patent number 11,848,053
- Issue date Dec 19, 2023
- Micron Technology, Inc.
- Vladimir Mikhalev
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,830,919
- Issue date Nov 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 11,799,014
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with multiple gate dielectrics and dual wor...
- Patent number 11,791,396
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of integrating multiple gate dielectric transistors on a tr...
- Patent number 11,695,008
- Issue date Jul 4, 2023
- Intel Corporation
- Curtis Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a decreasing height gate structure
- Patent number 11,690,213
- Issue date Jun 27, 2023
- Samsung Electronics Co., Ltd.
- Dongkyun Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,664,437
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Ju Youn Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPLIT-GATE MOSFET
- Publication number 20240421224
- Publication date Dec 19, 2024
- NEXPERIA B.V.
- Jie Qi Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME
- Publication number 20240421210
- Publication date Dec 19, 2024
- Shanghai Huali Integrated Circuit Corporation
- Zhi TIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240395735
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Structures For Semiconductor Devices
- Publication number 20240387726
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...
- Publication number 20240322037
- Publication date Sep 26, 2024
- SONY GROUP CORPORATION
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SPLIT GATE STRUCTURE AND MANUFACTURING...
- Publication number 20240304717
- Publication date Sep 12, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- DONG FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240224495
- Publication date Jul 4, 2024
- SK HYNIX INC.
- Seung Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND DISP...
- Publication number 20240213373
- Publication date Jun 27, 2024
- BOE TECHNOLOGY GROUP CO., LTD.
- Dongfang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION M...
- Publication number 20240194764
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240186411
- Publication date Jun 6, 2024
- Advanced Power Electronics Corp.
- Yen-Yuan HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240170548
- Publication date May 23, 2024
- RENESAS ELECTRONICS CORPORATION
- Hiroya SHIMOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS WINDOW CONTROL FOR GATE FORMATION IN SEMICONDUCTOR DEVICES
- Publication number 20240170543
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH
- Publication number 20240097029
- Publication date Mar 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS
- Publication number 20240088289
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240079464
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Motoki TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ACTIVE REGIONS OF DIFFERENT DIMENSIONS...
- Publication number 20240030290
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHING-YU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240021547
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING SEMICONDUCTOR DEVICES WITH SUPERLATTICE AND EMBE...
- Publication number 20230411491
- Publication date Dec 21, 2023
- ATOMERA INCORPORATED
- MAREK HYTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY UNIT CELL
- Publication number 20230413540
- Publication date Dec 21, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230402540
- Publication date Dec 14, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Lijie ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL ORIENTED METAL-OXIDE-SEMICONDUCTOR, MOS DEVICE COMPRISING A...
- Publication number 20230402541
- Publication date Dec 14, 2023
- NEXPERIA B.V.
- Manoj Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHODS THEREOF
- Publication number 20230369450
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anhao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING MULTIPLE GATE DIELECTRIC TRANSISTORS ON A TR...
- Publication number 20230299087
- Publication date Sep 21, 2023
- Intel Corporation
- Curtis TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230268400
- Publication date Aug 24, 2023
- RENESAS ELECTRONICS CORPORATION
- Yoshiyuki KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230268437
- Publication date Aug 24, 2023
- UNITED MICROELECTRONICS CORP.
- Chih-Chien Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-TYPE POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230215943
- Publication date Jul 6, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Xiao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230197858
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- SOONMOON JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230187552
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- B82 - NANO-TECHNOLOGY

with multiple gate, at least one gate being an insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate structure and methods thereof

Semiconductor device including strained transistor and method for m...

Dual gate structures for semiconductor devices

Semiconductor and method of manufacturing the same

LDMOS with self-aligned body and hybrid source

Multi-gate semiconductor structure and method of manufacturing the...

DEPFET transistor and method of manufacturing a DEPFET transistor

Semiconductor device and method

High voltage switching device

Gate patterning process for multi-gate devices

Multi-threshold voltage devices and associated techniques and confi...

Integrated nanowire and nanoribbon patterning in transistor manufac...

DEPFET transistor and method of manufacturing a DEPFET transistor

Method of manufacturing semiconductor device

Semiconductor device

Display device

Quantum dot devices with overlapping gates

FeFET with double gate structure

Process window control for gate formation in semiconductor devices

Multi-gate devices with multi-layer inner spacers and fabrication m...

Dual gate structures for semiconductor devices

Semiconductor device and method of fabricating the same

Fabrication of long gate devices

Multi-gate transistors and memories having multi-gate transistors

Semiconductor device and method for fabricating the same

Gate structure and methods thereof

Field effect transistor with multiple gate dielectrics and dual wor...

Methods of integrating multiple gate dielectric transistors on a tr...

Semiconductor devices having a decreasing height gate structure

Semiconductor devices

Patents Applicationslast 30 patents

SPLIT-GATE MOSFET

HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME

High Voltage Switching Device

ELECTRONIC DEVICE

Dual Gate Structures For Semiconductor Devices

DEPFET TRANSISTOR

MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...

SEMICONDUCTOR DEVICE HAVING SPLIT GATE STRUCTURE AND MANUFACTURING...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND DISP...

MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION M...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROCESS WINDOW CONTROL FOR GATE FORMATION IN SEMICONDUCTOR DEVICES

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING ACTIVE REGIONS OF DIFFERENT DIMENSIONS...

ELECTRONIC DEVICE

METHODS FOR MAKING SEMICONDUCTOR DEVICES WITH SUPERLATTICE AND EMBE...

ONE-TIME PROGRAMMABLE MEMORY UNIT CELL

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

LATERAL ORIENTED METAL-OXIDE-SEMICONDUCTOR, MOS DEVICE COMPRISING A...

GATE STRUCTURE AND METHODS THEREOF

METHODS OF INTEGRATING MULTIPLE GATE DIELECTRIC TRANSISTORS ON A TR...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

POWER DEVICE AND FABRICATION METHOD THEREOF

TRENCH-TYPE POWER DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

MULTI-GATE SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME