with recessed gate

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CPC
H01L29/8128

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/8128with recessed gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Remote contacts for a trench semiconductor device and methods of ma...
- Patent number 11,469,312
- Issue date Oct 11, 2022
- Semiconductor Components Industries, LLC
- Mohammed T. Quddus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method for producing same
- Patent number 11,127,863
- Issue date Sep 21, 2021
- Forschungsverbund Berlin e.V.
- Konstantin Osipov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device having trench termination struc...
- Patent number 11,081,554
- Issue date Aug 3, 2021
- Semiconductor Components Industries, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,811,371
- Issue date Oct 20, 2020
- Mitsubishi Electric Corporation
- Naoto Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Constricted junctionless FinFET/nanowire/nanosheet device having ca...
- Patent number 10,777,638
- Issue date Sep 15, 2020
- Synopsys, Inc.
- Hiu Yung Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET with buried gate structure
- Patent number 10,388,746
- Issue date Aug 20, 2019
- Teledyne Scientific & Imaging, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,367,099
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaAlP Schottky field effect transistor with AlGaAs carrier supply...
- Patent number 10,361,272
- Issue date Jul 23, 2019
- WIN Semiconductors Corp.
- Shih-Ming Joseph Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field effect transistor with self-aligned gate
- Patent number 10,164,054
- Issue date Dec 25, 2018
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming electrode trenches by using a directed ion beam and semicon...
- Patent number 10,083,835
- Issue date Sep 25, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,050,154
- Issue date Aug 14, 2018
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 9,960,263
- Issue date May 1, 2018
- Mitsubishi Electric Corporation
- Takahiro Nakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved field plate
- Patent number 9,640,623
- Issue date May 2, 2017
- Cree, Inc.
- Helmut Hagleitner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved field plate
- Patent number 9,608,078
- Issue date Mar 28, 2017
- Cree, Inc.
- Helmut Hagleitner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor transistor with self aligned gate
- Patent number 9,443,941
- Issue date Sep 13, 2016
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,349,800
- Issue date May 24, 2016
- Kabushiki Kaisha Toshiba
- Mariko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge shunting circuit
- Patent number 9,171,963
- Issue date Oct 27, 2015
- University of Central Florida Research Foundation, Inc.
- Qiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor stacked body, method for manufacturing same, and semi...
- Patent number 9,153,648
- Issue date Oct 6, 2015
- Tamura Corporation
- Shinkuro Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 9,142,618
- Issue date Sep 22, 2015
- Kabushiki Kaisha Toshiba
- Mariko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structure for high power microelectronic devices
- Patent number 9,024,327
- Issue date May 5, 2015
- Cree, Inc.
- Allan Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor element and method for fabricating th...
- Patent number 9,018,699
- Issue date Apr 28, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Tsutomu Kiyosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain re-growth for manufacturing III-V based transistors
- Patent number 9,006,788
- Issue date Apr 14, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and field effect transistor
- Patent number 8,981,434
- Issue date Mar 17, 2015
- Renesas Electronics Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN based HEMTs with buried field plates
- Patent number 8,933,486
- Issue date Jan 13, 2015
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench MESFET
- Patent number 8,692,319
- Issue date Apr 8, 2014
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain re-growth for manufacturing III-V based transistors
- Patent number 8,617,976
- Issue date Dec 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,604,540
- Issue date Dec 10, 2013
- Denso Corporation
- Rajesh Kumar Malhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 8,525,184
- Issue date Sep 3, 2013
- Sumitomo Electric Industries, Ltd.
- Masaya Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming thereof
- Patent number 8,518,794
- Issue date Aug 27, 2013
- Electronics and Telecommunications Research Institute
- Hokyun Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,519,440
- Issue date Aug 27, 2013
- Mitsubishi Electric Corporation
- Yoichi Nogami
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REMOTE CONTACTS FOR A TRENCH SEMICONDUCTOR DEVICE AND METHODS OF MA...
- Publication number 20210313453
- Publication date Oct 7, 2021
- Semiconductor Components Industries, LLC
- Mohammed T. QUDDUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD FOR PRODUCING SAME
- Publication number 20200066919
- Publication date Feb 27, 2020
- FORSCHUNGSVERBUND BERLIN E.V.
- Konstantin OSIPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190123000
- Publication date Apr 25, 2019
- Mitsubishi Electric Corporation
- Naoto ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SEMICONDUCTOR DEVICE HAVING TRENCH TERMINATION STRUC...
- Publication number 20190115436
- Publication date Apr 18, 2019
- Semiconductor Components Industries, LLC
- Zia HOSSAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE
- Publication number 20190088765
- Publication date Mar 21, 2019
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaAlP Schottky Field Effect Transistor with AlGaAs Carrier Suppl...
- Publication number 20190074356
- Publication date Mar 7, 2019
- WIN Semiconductors Corp.
- Shih-Ming Joseph LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20180342626
- Publication date Nov 29, 2018
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE
- Publication number 20180277657
- Publication date Sep 27, 2018
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING ELECTRODE TRENCHES BY USING A DIRECTED ION BEAM AND SEMICON...
- Publication number 20180005830
- Publication date Jan 4, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170207183
- Publication date Jul 20, 2017
- Mitsubishi Electric Corporation
- Naoto ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20170133518
- Publication date May 11, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140145210
- Publication date May 29, 2014
- KABUSHIKI KAISHA TOSHIBA
- Mariko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20140110758
- Publication date Apr 24, 2014
- Sumitomo Electric Industries, Ltd.
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Re-Growth for Manufacturing III-V Based Transistors
- Publication number 20140070276
- Publication date Mar 13, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMI...
- Publication number 20140048823
- Publication date Feb 20, 2014
- Koha Co., Ltd.
- Shinkuro Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound Semiconductor Transistor with Self Aligned Gate
- Publication number 20130320350
- Publication date Dec 5, 2013
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130313564
- Publication date Nov 28, 2013
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Masaya OKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING TH...
- Publication number 20130168701
- Publication date Jul 4, 2013
- PANASONIC CORPORATION
- Tsutomu Kiyosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metallization structure for high power microelectronic devices
- Publication number 20130134433
- Publication date May 30, 2013
- Allan Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR
- Publication number 20130113028
- Publication date May 9, 2013
- NEC Corporation
- Hironobu MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20130069127
- Publication date Mar 21, 2013
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Ho Kyun AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRENCH MESFET
- Publication number 20120305987
- Publication date Dec 6, 2012
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20120273797
- Publication date Nov 1, 2012
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Masaya Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE SHUNTING CIRCUIT
- Publication number 20120256233
- Publication date Oct 11, 2012
- University of Central Florida Research Foundation, Inc.
- QIANG CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120217557
- Publication date Aug 30, 2012
- Mitsubishi Electric Corporation
- Yoichi Nogami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR
- Publication number 20120199889
- Publication date Aug 9, 2012
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN BASED HEMTS WITH BURIED FIELD PLATES
- Publication number 20120049243
- Publication date Mar 1, 2012
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120012893
- Publication date Jan 19, 2012
- PANASONIC CORPORATION
- Kazushi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120007153
- Publication date Jan 12, 2012
- Mitsubishi Electric Corporation
- Yoichi Nogami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING THERMO ELECTRON COOLING
- Publication number 20110248280
- Publication date Oct 13, 2011
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS

with recessed gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Remote contacts for a trench semiconductor device and methods of ma...

Gate structure and method for producing same

Insulated gate semiconductor device having trench termination struc...

Semiconductor device and manufacturing method thereof

Constricted junctionless FinFET/nanowire/nanosheet device having ca...

FET with buried gate structure

Trench vertical JFET with ladder termination

InGaAlP Schottky field effect transistor with AlGaAs carrier supply...

Compound semiconductor field effect transistor with self-aligned gate

Forming electrode trenches by using a directed ion beam and semicon...

Trench vertical JFET with ladder termination

Field effect transistor and method of manufacturing the same

Semiconductor device with improved field plate

Semiconductor device with improved field plate

Compound semiconductor transistor with self aligned gate

Semiconductor device

Electrostatic discharge shunting circuit

Semiconductor stacked body, method for manufacturing same, and semi...

Semiconductor device

Metallization structure for high power microelectronic devices

Silicon carbide semiconductor element and method for fabricating th...

Source/drain re-growth for manufacturing III-V based transistors

Semiconductor device and field effect transistor

GaN based HEMTs with buried field plates

Lateral trench MESFET

Source/drain re-growth for manufacturing III-V based transistors

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing same

Semiconductor devices and methods of forming thereof

Semiconductor device

Patents Applicationslast 30 patents

REMOTE CONTACTS FOR A TRENCH SEMICONDUCTOR DEVICE AND METHODS OF MA...

GATE STRUCTURE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INSULATED GATE SEMICONDUCTOR DEVICE HAVING TRENCH TERMINATION STRUC...

COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE

InGaAlP Schottky Field Effect Transistor with AlGaAs Carrier Suppl...

Trench Vertical JFET With Ladder Termination

COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE

FORMING ELECTRODE TRENCHES BY USING A DIRECTED ION BEAM AND SEMICON...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Trench Vertical JFET With Ladder Termination

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

Source/Drain Re-Growth for Manufacturing III-V Based Transistors

SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMI...

Compound Semiconductor Transistor with Self Aligned Gate

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING TH...

Metallization structure for high power microelectronic devices

SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF

LATERAL TRENCH MESFET

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

ELECTROSTATIC DISCHARGE SHUNTING CIRCUIT

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR

GAN BASED HEMTS WITH BURIED FIELD PLATES

SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

TRANSISTOR HAVING THERMO ELECTRON COOLING