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H01L29/7854

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7854with rounded corners

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 12,057,492
- Issue date Aug 6, 2024
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 12,046,638
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a fin-shaped active region and a gate ele...
- Patent number 12,015,086
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a necked semiconductor body and method...
- Patent number 12,015,087
- Issue date Jun 18, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protrusion field-effect transistor and methods of making the same
- Patent number 11,990,514
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having spacer residue
- Patent number 11,984,450
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising stacked transistors
- Patent number 11,961,917
- Issue date Apr 16, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Kazuya Hanaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-type pattern with varying widths al...
- Patent number 11,956,937
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Ki-Il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,949,021
- Issue date Apr 2, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,930,628
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-I Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-fin leakage reduction for template strained materials
- Patent number 11,923,412
- Issue date Mar 5, 2024
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor
- Patent number 11,908,941
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Sang U. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of fabricating such devices
- Patent number 11,894,376
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Dae-Won Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench plug hardmask for advanced integrated circuit structure fabr...
- Patent number 11,887,838
- Issue date Jan 30, 2024
- Intel Corporation
- Anthony St. Amour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,876,097
- Issue date Jan 16, 2024
- Samsung Electronics Co., Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure with various widths
- Patent number 11,862,634
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiao-Han Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating fin structure for fin field effect transistor
- Patent number 11,862,727
- Issue date Jan 2, 2024
- United Microelectronics Corp.
- Hao Che Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,862,733
- Issue date Jan 2, 2024
- Samsung Electronics Co., Ltd.
- Sunguk Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,855,193
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivated and faceted for fin field effect transistor
- Patent number 11,855,219
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,854,898
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Footing removal in cut-metal process
- Patent number 11,854,903
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Chi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for recessed fin structure having rounded corners
- Patent number 11,855,222
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yen Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...
- Publication number 20240395628
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240355930
- Publication date Oct 24, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Kazuya HANAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290888
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME
- Publication number 20240266399
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240266444
- Publication date Aug 8, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including FINFET Structures with Increased Ga...
- Publication number 20240224487
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Ki-Il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...
- Publication number 20240222509
- Publication date Jul 4, 2024
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...
- Publication number 20240186403
- Publication date Jun 6, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240178071
- Publication date May 30, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR WITH PRECISE GEOMETRIES AND RELATED MANUFA...
- Publication number 20240178320
- Publication date May 30, 2024
- Invention And Collaboration Laboratory Pte., Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20240162332
- Publication date May 16, 2024
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240128268
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Krishna Kumar BHUWALKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH TRENCH CONTACT DEPOPULATION STRU...
- Publication number 20240105803
- Publication date Mar 28, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUGREMOVED FROM TREN...
- Publication number 20240105802
- Publication date Mar 28, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20240105818
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Footing Removal in Cut-Metal Process
- Publication number 20240096707
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE WITH VARIOUS WIDTHS
- Publication number 20240096882
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Han LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...
- Publication number 20240088297
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240038578
- Publication date Feb 1, 2024
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240038843
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Soojin JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230246110
- Publication date Aug 3, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230247818
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-I SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230207664
- Publication date Jun 29, 2023
- Intel Corporation
- Michael L. HATTENDORF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A GATE STRUCTURE
- Publication number 20230197806
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-FIN LEAKAGE REDUCTION FOR TEMPLATE STRAINED MATERIALS
- Publication number 20230187492
- Publication date Jun 15, 2023
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS

with rounded corners

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Contact over active gate structures for advanced integrated circuit...

Gate cut and fin trim isolation for advanced integrated circuit str...

Fin field effect transistor (FinFET) device having position-depende...

Semiconductor device with a fin-shaped active region and a gate ele...

Semiconductor device having a necked semiconductor body and method...

Protrusion field-effect transistor and methods of making the same

Semiconductor device having spacer residue

Semiconductor device comprising stacked transistors

Dual metal silicide structures for advanced integrated circuit stru...

Semiconductor device including a gate structure

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Semiconductor device having fin-type pattern with varying widths al...

Trench contact structures for advanced integrated circuit structure...

Semiconductor device

Semiconductor device and manufacturing method thereof

Sub-fin leakage reduction for template strained materials

FinFET transistor

Integrated circuit devices and methods of fabricating such devices

Trench plug hardmask for advanced integrated circuit structure fabr...

Fin patterning for advanced integrated circuit structure fabrication

Semiconductor device

Nanostructure with various widths

Method for fabricating fin structure for fin field effect transistor

Semiconductor devices

Fin field-effect transistor device and method of forming the same

Passivated and faceted for fin field effect transistor

Wrap-around contact on FinFET

Footing removal in cut-metal process

Semiconductor device for recessed fin structure having rounded corners

Patents Applicationslast 30 patents

GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...

SEMICONDUCTOR DEVICE

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SEMICONDUCTOR DEVICE

PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME

SEMICONDUCTOR DEVICE

Semiconductor Devices Including FINFET Structures with Increased Ga...

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

SEMICONDUCTOR TRANSISTOR WITH PRECISE GEOMETRIES AND RELATED MANUFA...

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

SEMICONDUCTOR DEVICE

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

INTEGRATED CIRCUIT STRUCTURES WITH TRENCH CONTACT DEPOPULATION STRU...

INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUGREMOVED FROM TREN...

Fin Field-Effect Transistor Device and Method of Forming the Same

Footing Removal in Cut-Metal Process

NANOSTRUCTURE WITH VARIOUS WIDTHS

A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...

SEMICONDUCTOR DEVICES

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

SEMICONDUCTOR DEVICE INCLUDING A GATE STRUCTURE

SUB-FIN LEAKAGE REDUCTION FOR TEMPLATE STRAINED MATERIALS