with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

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CPC
H01L29/08

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including insulated gate bipolar transistor
- Patent number 12,224,316
- Issue date Feb 11, 2025
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency transistor amplifiers having self-aligned double im...
- Patent number 12,224,318
- Issue date Feb 11, 2025
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 12,224,317
- Issue date Feb 11, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,345
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,224,350
- Issue date Feb 11, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide thin film transistor, display panel and preparation method th...
- Patent number 12,224,354
- Issue date Feb 11, 2025
- WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Ding Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for manufacturing semiconductor de...
- Patent number 12,218,237
- Issue date Feb 4, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yuki Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of FinFET devices and methods of forming same
- Patent number 12,218,240
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with multiple silicid...
- Patent number 12,218,012
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated chip with a gate structure disposed within a trench
- Patent number 12,219,770
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructures formed over a substrate and a gate structure wrappin...
- Patent number 12,218,218
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,218,222
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with etch stop layer for reducing RC...
- Patent number 12,218,241
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,218,046
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Eui Bok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor using carbon nano...
- Patent number 12,218,198
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Fin at a S/D region and a semiconduct...
- Patent number 12,218,136
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate string drivers having shared pillar structure
- Patent number 12,219,772
- Issue date Feb 4, 2025
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices having gate spacers...
- Patent number 12,218,216
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,218,130
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for gate-all-around metal-oxide-semiconductor...
- Patent number 12,218,137
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with gate extensions
- Patent number 12,211,896
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor (BJT) and fabricating method thereof
- Patent number 12,211,910
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor having improved layout
- Patent number 12,211,916
- Issue date Jan 28, 2025
- Ampleon Netherlands B.V.
- Patrick Valk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut EPI process and structures
- Patent number 12,211,749
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20250056821
- Publication date Feb 13, 2025
- Ming-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD
- Publication number 20250056846
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250056840
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...
- Publication number 20250056850
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE FOR CHIP IDENTIFICATION
- Publication number 20250056876
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Huan Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...
- Publication number 20250056843
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jong Min SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20250056853
- Publication date Feb 13, 2025
- RICHTEK TECHNOLOGY CORPORATION
- Wen-Wei LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER GATING USING NANOELECTROMECHANICAL SYSTEMS (NEMS) IN BACK END...
- Publication number 20250056874
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Efficient FET Body and Substrate Contacts
- Publication number 20250056875
- Publication date Feb 13, 2025
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL
- Publication number 20250048681
- Publication date Feb 6, 2025
- Kennametal Inc.
- Tim Guter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTORS
- Publication number 20250048688
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURES AND IMPURITY REGIONS
- Publication number 20250048697
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Junghyun OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250048696
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- KI HWAN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250048694
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hsien YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND METHOD OF MAKING A BIPOLAR TRANSISTOR
- Publication number 20250048663
- Publication date Feb 6, 2025
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250048699
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Ki Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE
- Publication number 20250048695
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...
- Publication number 20250048724
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040188
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Yang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM
- Publication number 20250040196
- Publication date Jan 30, 2025
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040206
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Dahye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040216
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sungil PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Contact and Metal over Diffusion
- Publication number 20250038070
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS
- Publication number 20250038111
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS

with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including insulated gate bipolar transistor

Manufacturing method of semiconductor device using gate-through imp...

Radio frequency transistor amplifiers having self-aligned double im...

Vertical power semiconductor device and manufacturing method

Semiconductor device

Contact architecture for capacitance reduction and satisfactory con...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Oxide thin film transistor, display panel and preparation method th...

Semiconductor device, and method for manufacturing semiconductor de...

Source/drain regions of FinFET devices and methods of forming same

Method of manufacturing semiconductor devices with multiple silicid...

Integrated chip with a gate structure disposed within a trench

Nanostructures formed over a substrate and a gate structure wrappin...

FinFET device and method of forming same

Semiconductor device structure with etch stop layer for reducing RC...

Semiconductor device and method of fabricating the same

Method of manufacturing a field effect transistor using carbon nano...

Semiconductor device having a Fin at a S/D region and a semiconduct...

Multi-gate string drivers having shared pillar structure

Method for manufacturing semiconductor devices having gate spacers...

Semiconductor structure cutting process and structures formed thereby

Structure and method for gate-all-around metal-oxide-semiconductor...

Semiconductor device and a method for fabricating the same

High voltage device with gate extensions

Hybrid channel semiconductor device and method

Gate-all-around transistor with strained channels

Bipolar junction transistor (BJT) and fabricating method thereof

Field-effect transistor having improved layout

FinFET device and method of forming same

Cut EPI process and structures

Patents Applicationslast 30 patents

INSULATED GATE BIPOLAR TRANSISTOR

TRANSISTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

SEMICONDUCTOR DEVICE

NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...

SEMICONDUCTOR DEVICE STRUCTURE FOR CHIP IDENTIFICATION

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...

JUNCTION FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF MANUFACTURING...

POWER GATING USING NANOELECTROMECHANICAL SYSTEMS (NEMS) IN BACK END...

Efficient FET Body and Substrate Contacts

METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL

STACKED FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURES AND IMPURITY REGIONS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

BIPOLAR TRANSISTOR AND METHOD OF MAKING A BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

SEMICONDUCTOR DEVICE

FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Backside Contact and Metal over Diffusion

SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS