with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

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CPC
H01L29/10

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 12,211,934
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and associated fabricating method
- Patent number 12,211,935
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having 2-transistor vertical memory cell and conducti...
- Patent number 12,213,321
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench structure in which propagation o...
- Patent number 12,211,899
- Issue date Jan 28, 2025
- Korea Institute of Science and Technology
- Hyung-jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for designing thereof
- Patent number 12,211,903
- Issue date Jan 28, 2025
- mqSemi AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructured channel regions for semiconductor devices
- Patent number 12,211,918
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown voltage
- Patent number 12,211,932
- Issue date Jan 28, 2025
- Renesas Electronics Corporation
- Machiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,213,296
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 12,211,902
- Issue date Jan 28, 2025
- Denso Corporation
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with terminals having a non-plan...
- Patent number 12,211,929
- Issue date Jan 28, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device
- Patent number 12,206,020
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 12,206,016
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,205,953
- Issue date Jan 21, 2025
- SOCIONEXT INC.
- Toshio Hino
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Butted body contact for SOI transistor and amplifier circuit
- Patent number 12,205,954
- Issue date Jan 21, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 12,205,944
- Issue date Jan 21, 2025
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 12,199,146
- Issue date Jan 14, 2025
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and semiconductor device
- Patent number 12,199,187
- Issue date Jan 14, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,178
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with polysilicon deep drain
- Patent number 12,199,179
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevationally-extending transistors, devices comprising elevational...
- Patent number 12,199,182
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,191
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Tadao Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice with O18 enriched monol...
- Patent number 12,199,148
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,172
- Issue date Jan 14, 2025
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM
- Publication number 20250040196
- Publication date Jan 30, 2025
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR VERTICAL CONNECTION WITH INTERNAL EPITAXIAL...
- Publication number 20250040202
- Publication date Jan 30, 2025
- TOKYO ELECTRON LIMITED
- Mark I. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar JFET Device with Reduced Gate Resistance
- Publication number 20250040166
- Publication date Jan 30, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040176
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Youngtaek Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BODY CONTACT IMPLANT HAVING IMPROVED SHAPE, AND MAN...
- Publication number 20250040204
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Giuseppe Pio PISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD
- Publication number 20250040243
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All-Around Laterally Diffused Metal-Oxide Semiconductor Field...
- Publication number 20250040169
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040207
- Publication date Jan 30, 2025
- Rohm Co., Ltd.
- Yusuke SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20250040211
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250040162
- Publication date Jan 30, 2025
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MATSUURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250040212
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Takuya KITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND BASE-COLLECTOR GRADE LAYER
- Publication number 20250031395
- Publication date Jan 23, 2025
- National Taiwan University
- Jian-Jang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...
- Publication number 20250031418
- Publication date Jan 23, 2025
- Samsung Electronics Co., LTD
- Rock-Hyun BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Electronic Device
- Publication number 20250031449
- Publication date Jan 23, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Atsushi Umezaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD
- Publication number 20250030386
- Publication date Jan 23, 2025
- Skyworks Solutions, Inc.
- Weimin Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250024679
- Publication date Jan 16, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- G11 - INFORMATION STORAGE
Information Patent Application
Assemblies Having Conductive Structures Along Pillars of Semiconduc...
- Publication number 20250022955
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250022941
- Publication date Jan 16, 2025
- Samsung Electronics Co., LTD
- Beomjin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES INCLUDING MULTI-MATERIAL CHANNEL STRUCTURES
- Publication number 20250022962
- Publication date Jan 16, 2025
- Lodestar Licensing Group LLC
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES
- Publication number 20250015187
- Publication date Jan 9, 2025
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015170
- Publication date Jan 9, 2025
- Fuji Electric Co., Ltd.
- Yuta SHINODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015179
- Publication date Jan 9, 2025
- United Microelectronics Corp.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250015081
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250015136
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Ryoichi MAKINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015175
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yoshinori KAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015177
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015171
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Masaki AONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
- Publication number 20250015172
- Publication date Jan 9, 2025
- Hitachi Energy Ltd
- Tobias WIKSTROEM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device with Blocking Region
- Publication number 20250006793
- Publication date Jan 2, 2025
- SOOCHOW UNIVERSITY
- Mingxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS

with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Hybrid channel semiconductor device and method

Gate-all-around transistor with strained channels

Semiconductor structure and method for manufacturing the same

Semiconductor structure and associated fabricating method

FinFET device and method of forming same

Memory device having 2-transistor vertical memory cell and conducti...

Semiconductor device having trench structure in which propagation o...

Semiconductor device having a doped fin well

Semiconductor device and method for designing thereof

Nanostructured channel regions for semiconductor devices

Semiconductor device with improved breakdown voltage

IC including standard cells and SRAM cells

Silicon carbide semiconductor device and method for manufacturing t...

Strained-channel fin FETs

Method of manufacturing a semiconductor device and a semiconductor...

Heterojunction bipolar transistors with terminals having a non-plan...

Single sided channel mesa power junction field effect transistor

High voltage semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Semiconductor integrated circuit device

Butted body contact for SOI transistor and amplifier circuit

Isolation structure for IC with epi regions sharing the same tank

Power semiconductor device with dV/dt controllability and low gate...

Transistor and semiconductor device

Semiconductor device

LDMOS with polysilicon deep drain

Elevationally-extending transistors, devices comprising elevational...

Semiconductor device

Semiconductor device including superlattice with O18 enriched monol...

Semiconductor device

Patents Applicationslast 30 patents

FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM

METHODS AND DEVICES FOR VERTICAL CONNECTION WITH INTERNAL EPITAXIAL...

Planar JFET Device with Reduced Gate Resistance

SEMICONDUCTOR DEVICE

TRANSISTOR WITH BODY CONTACT IMPLANT HAVING IMPROVED SHAPE, AND MAN...

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD

Gate All-Around Laterally Diffused Metal-Oxide Semiconductor Field...

SEMICONDUCTOR DEVICE

SiC SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

HETEROJUNCTION BIPOLAR TRANSISTOR AND BASE-COLLECTOR GRADE LAYER

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...

Semiconductor Device and Electronic Device

POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

Assemblies Having Conductive Structures Along Pillars of Semiconduc...

SEMICONDUCTOR DEVICES

MEMORY DEVICES INCLUDING MULTI-MATERIAL CHANNEL STRUCTURES

TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE

Field Effect Transistor Device with Blocking Region