with source or drain recessed by etching or first recessed by etching and then refilled

Industry

CPC
H01L29/66636

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66636with source or drain recessed by etching or first recessed by etching and then refilled

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon channel tempering
- Patent number 12,199,190
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Ge isolated epitaxial layer growth over nano-sheet architecture...
- Patent number 12,191,393
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 12,191,309
- Issue date Jan 7, 2025
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,148,837
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device with gate spacer structure
- Patent number 12,148,813
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 12,148,843
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure having a gate contact above a metal gate and strad...
- Patent number 12,148,834
- Issue date Nov 19, 2024
- Huawei Technologies Co., Ltd.
- Xinfang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,148,701
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Hongsik Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMP process and methods thereof
- Patent number 12,131,911
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate spacers extending below a fin top...
- Patent number 12,125,891
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,125,878
- Issue date Oct 22, 2024
- Kioxia Corporation
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy fin profile control to enlarge gate process window
- Patent number 12,113,122
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor contact with reduced contact resistance
- Patent number 12,107,086
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure with fins using a multil...
- Patent number 12,087,641
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of fin-like field effect transistor
- Patent number 12,087,643
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shiu-Ko Jangjian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Eight-transistor static random access memory, layout thereof, and m...
- Patent number 12,082,388
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shau-Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with source/drain modulation
- Patent number 12,080,607
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,712
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Byounghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structures and method of forming
- Patent number 12,074,071
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 12,068,393
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME
- Publication number 20240395907
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Features
- Publication number 20240387739
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CHANNEL TEMPERING
- Publication number 20240387745
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS
- Publication number 20240387289
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE
- Publication number 20240387697
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions and Methods of Forming Same
- Publication number 20240379454
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379431
- Publication date Nov 14, 2024
- Parabellum Strategic Opportunities Fund LLC
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE
- Publication number 20240379862
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240371636
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE
- Publication number 20240371973
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY FIN PROFILE CONTROL TO ENLARGE GATE PROCESS WINDOW
- Publication number 20240371979
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240372008
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMP PROCESS AND METHODS THEREOF
- Publication number 20240371649
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...
- Publication number 20240373615
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shau-Wei LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240363714
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Hao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20240363436
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Ting KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20240363442
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF FIN-LIKE FIELD EFFECT TRANSISTOR
- Publication number 20240363439
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiu-Ko JANGJIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20240363443
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN
- Publication number 20240363729
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION
- Publication number 20240363435
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE
- Publication number 20240355910
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI LOSS MITIGATION BY RADICAL OXIDATION TREATMENT
- Publication number 20240355906
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Hua Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20240347642
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including Backside Vias and Methods of Formin...
- Publication number 20240339542
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS

with source or drain recessed by etching or first recessed by etching and then refilled

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a multi-gate device having a semiconductor...

Gate line plug structures for advanced integrated circuit structure...

Silicon channel tempering

Plugs for interconnect lines for advanced integrated circuit struct...

Low Ge isolated epitaxial layer growth over nano-sheet architecture...

Method to induce strain in finFET channels from an adjacent region

Method of forming a semiconductor device by driving hydrogen into a...

Semiconductor devices

Field-effect transistor device with gate spacer structure

Semiconductor device with treated interfacial layer on silicon germ...

FinFET structure having a gate contact above a metal gate and strad...

Semiconductor device

Method for forming source/drain contacts

Semiconductor device having a shaped epitaxial region with shaping...

Contact over active gate structures for advanced integrated circuit...

Integrated circuit with doped low-k sidewall spacers for gate stacks

CMP process and methods thereof

Methods for forming recesses in source/drain regions and devices fo...

Semiconductor device having gate spacers extending below a fin top...

Semiconductor device and manufacturing method thereof

Dummy fin profile control to enlarge gate process window

Field effect transistor contact with reduced contact resistance

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Method for forming semiconductor structure with fins using a multil...

Structure and formation method of fin-like field effect transistor

Eight-transistor static random access memory, layout thereof, and m...

Structure and method for FinFET device with source/drain modulation

Semiconductor device

Source/drain structures and method of forming

Etching back and selective deposition of metal gate

Patents Applicationslast 30 patents

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICE AND METHOD

MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

Epitaxial Features

SILICON CHANNEL TEMPERING

DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS

FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

Source/Drain Regions and Methods of Forming Same

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE

DUMMY FIN PROFILE CONTROL TO ENLARGE GATE PROCESS WINDOW

SEMICONDUCTOR DEVICES

CMP PROCESS AND METHODS THEREOF

EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...

SEMICONDUCTOR STRUCTURE

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

STRUCTURE AND FORMATION METHOD OF FIN-LIKE FIELD EFFECT TRANSISTOR

Source/Drain Structures and Method of Forming

METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN

STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION

INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE

STI LOSS MITIGATION BY RADICAL OXIDATION TREATMENT

MULTI-GATE DEVICE AND RELATED METHODS

Semiconductor Devices Including Backside Vias and Methods of Formin...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...