with source or drain recessed by etching or first recessed by etching and then refilled

Industry

CPC
H01L29/66636

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66636with source or drain recessed by etching or first recessed by etching and then refilled

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure with source/drain structure having modified...
- Patent number 11,973,127
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual threshold voltage (VT) channel devices and their methods of fa...
- Patent number 11,967,615
- Issue date Apr 23, 2024
- Intel Corporation
- Hsu-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a doped region of a microelectronic device
- Patent number 11,967,633
- Issue date Apr 23, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including channel regions having non-uniform...
- Patent number 11,961,911
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an epitaxy region
- Patent number 11,955,547
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Jen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 11,955,556
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Woocheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in FINFET channels from an adjacent region
- Patent number 11,948,943
- Issue date Apr 2, 2024
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,948,975
- Issue date Apr 2, 2024
- United Microelectronics Corp.
- Chih-Kai Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,948,977
- Issue date Apr 2, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned backside source contact structure
- Patent number 11,948,987
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 11,949,016
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,948,888
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Hongsik Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet semiconductor device and method for manufacturing the same
- Patent number 11,942,550
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,942,556
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Ru Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with improved margin and performance and methods of f...
- Patent number 11,937,416
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 11,935,943
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Hyun Kwan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insensitive epitaxy formation
- Patent number 11,935,951
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a source/drain
- Patent number 11,929,401
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated circuits having source/drain structure and method of making
- Patent number 11,923,200
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,923,433
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Liang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming spacers for semiconductor devices including back...
- Patent number 11,915,972
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with corner isolation protection and methods o...
- Patent number 11,916,105
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming different types of devices
- Patent number 11,917,803
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device having contact plugs with re-ent...
- Patent number 11,916,147
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous semiconductor device substrates with high quality epi...
- Patent number 11,908,922
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 11,908,934
- Issue date Feb 20, 2024
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 11,908,744
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...
- Publication number 20240145592
- Publication date May 2, 2024
- Intel Corporation
- Anand S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE
- Publication number 20240113221
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240113113
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-K Gate Spacer and Methods for Forming the Same
- Publication number 20240113202
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device And Related Methods
- Publication number 20240112959
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH
- Publication number 20240105814
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20240105846
- Publication date Mar 28, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20240105847
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Pei-Yu WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS
- Publication number 20240098959
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20240096689
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TE-AN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20240096986
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240088294
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...
- Publication number 20240088266
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
- Publication number 20240088155
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...
- Publication number 20240088297
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240047542
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHIH-BIN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND METHOD
- Publication number 20240038901
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240030354
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Ru LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gates of Transistors Having Reduced Resistivity
- Publication number 20240021473
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ching TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH SOURCE/DRAIN REGIONS COMPRISING AN INSULATOR LAYER
- Publication number 20240021466
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dopant Concentration Boost in Epitaxially Formed Material
- Publication number 20240014321
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...
- Publication number 20230413503
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shau-Wei LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20230411524
- Publication date Dec 21, 2023
- Semiconductor Manufacturing North China (Beijing) Corporation
- Jingang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES USING A SELF-ALI...
- Publication number 20230395433
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME
- Publication number 20230395702
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD O...
- Publication number 20230387240
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE STRUCTURES WITH UNIFORM GATE LENGTH
- Publication number 20230387246
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Fish Bone Structure And Methods Of Formin...
- Publication number 20230387326
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS

with source or drain recessed by etching or first recessed by etching and then refilled

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure with source/drain structure having modified...

Dual threshold voltage (VT) channel devices and their methods of fa...

Method for fabricating a doped region of a microelectronic device

Semiconductor devices including channel regions having non-uniform...

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device including an epitaxy region

Heterogeneous metal line compositions for advanced integrated circu...

Semiconductor devices and methods of manufacturing the same

Method to induce strain in FINFET channels from an adjacent region

Semiconductor device and method for fabricating the same

Silicon on insulator device with partially recessed gate

Self-aligned backside source contact structure

Multi-gate device and related methods

Trench contact structures for advanced integrated circuit structure...

Semiconductor device

Nanosheet semiconductor device and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Memory device with improved margin and performance and methods of f...

Semiconductor devices and methods of manufacturing the same

Metal-insensitive epitaxy formation

Method of forming a source/drain

Integrated circuits having source/drain structure and method of making

Fin field-effect transistor and method of forming the same

Methods of forming spacers for semiconductor devices including back...

Semiconductor device with corner isolation protection and methods o...

Method for forming different types of devices

Fin field-effect transistor device having contact plugs with re-ent...

Heterogeneous semiconductor device substrates with high quality epi...

Semiconductor device having doped epitaxial region and its methods...

Semiconductor device structure

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Semiconductor Structure Cutting Process and Structures Formed Thereby

Low-K Gate Spacer and Methods for Forming the Same

Multi-Gate Device And Related Methods

INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH

TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

METHOD FOR FORMING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...

AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE

A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND METHOD

SEMICONDUCTOR DEVICE

Metal Gates of Transistors Having Reduced Resistivity

FINFET WITH SOURCE/DRAIN REGIONS COMPRISING AN INSULATOR LAYER

Dopant Concentration Boost in Epitaxially Formed Material

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES USING A SELF-ALI...

MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME

SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD O...

METHODS OF FORMING GATE STRUCTURES WITH UNIFORM GATE LENGTH

Semiconductor Device With Fish Bone Structure And Methods Of Formin...