with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure

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H01L29/66643

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66643with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 11,843,040
- Issue date Dec 12, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for manufacturing the same
- Patent number 11,784,232
- Issue date Oct 10, 2023
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET transistors with hybrid contact
- Patent number 11,646,371
- Issue date May 9, 2023
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 11,355,613
- Issue date Jun 7, 2022
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for LDMOS and other MOS transistors with hybrid contact
- Patent number 11,322,611
- Issue date May 3, 2022
- Silicet, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,056,569
- Issue date Jul 6, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 11,043,571
- Issue date Jun 22, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,031,474
- Issue date Jun 8, 2021
- TOSHIBA MEMORY CORPORATION
- Yoshiyuki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,018,237
- Issue date May 25, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,950,707
- Issue date Mar 16, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,937,880
- Issue date Mar 2, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices for LDMOS and other MOS transistors with hybrid contact
- Patent number 10,892,362
- Issue date Jan 12, 2021
- Silicet, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,872,964
- Issue date Dec 22, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with shaped portions of elevated source/drain...
- Patent number 10,840,374
- Issue date Nov 17, 2020
- Samsung Electronics Co., Ltd.
- Chung-Hwan Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including source/drain dopan...
- Patent number 10,818,755
- Issue date Oct 27, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fermi-level unpinning structures for semiconductive devices, proces...
- Patent number 10,756,198
- Issue date Aug 25, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,553,695
- Issue date Feb 4, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for a power transistor having a Schottky or Sch...
- Patent number 10,510,869
- Issue date Dec 17, 2019
- SILICET, LLC
- Gary M. Dolny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 10,388,748
- Issue date Aug 20, 2019
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 10,186,592
- Issue date Jan 22, 2019
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,147,798
- Issue date Dec 4, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with dielectric-isolated source and drain regions
- Patent number 10,141,420
- Issue date Nov 27, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-modulated Schottky non-volatile memory
- Patent number 10,102,898
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,090,395
- Issue date Oct 2, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor structure with looped channel
- Patent number 10,079,308
- Issue date Sep 18, 2018
- GLOBALFOUNDRIES Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with shaped portions of elevated source/drain...
- Patent number 10,043,902
- Issue date Aug 7, 2018
- Samsung Electronics Co., Ltd.
- Chung-Hwan Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction interlayer dielectric for reducing leakage current in semi...
- Patent number 10,038,057
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 9,985,020
- Issue date May 29, 2018
- United Microelectronics Corp.
- Ching-Wen Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SBFET transistor and corresponding fabrication process
- Patent number 9,911,827
- Issue date Mar 6, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Louis Hutin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 9,812,542
- Issue date Nov 7, 2017
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20240072150
- Publication date Feb 29, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220293757
- Publication date Sep 15, 2022
- Rohm Co., Ltd.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET TRANSISTORS WITH HYBRID CONTACT
- Publication number 20220254914
- Publication date Aug 11, 2022
- Amplexia, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor and Method for Manufacturing the Same
- Publication number 20220208980
- Publication date Jun 30, 2022
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20210305392
- Publication date Sep 30, 2021
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR LDMOS AND OTHER MOS TRANSISTORS WITH HYBRID CONTACT
- Publication number 20210134999
- Publication date May 6, 2021
- Silicet, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273961
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273960
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200243662
- Publication date Jul 30, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN DOPAN...
- Publication number 20200161429
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20200152758
- Publication date May 14, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200066846
- Publication date Feb 27, 2020
- Toshiba Memory Corporation
- Yoshiyuki KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20190334006
- Publication date Oct 31, 2019
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIELECTRIC-ISOLATED SOURCE AND DRAIN REGIONS
- Publication number 20190157424
- Publication date May 23, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20190067439
- Publication date Feb 28, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN...
- Publication number 20180331218
- Publication date Nov 15, 2018
- Chung-Hwan Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180269298
- Publication date Sep 20, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR A POWER TRANSISTOR HAVING A SCHOTTKY OR SCH...
- Publication number 20180212041
- Publication date Jul 26, 2018
- Silicet, LLC
- Gary M. DOLNY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC-MODULATED SCHOTTKY NON-VOLATILE MEMORY
- Publication number 20180190338
- Publication date Jul 5, 2018
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180166552
- Publication date Jun 14, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTACT FORMATION BETWEEN METAL AND SEMICONDUCTOR
- Publication number 20180076324
- Publication date Mar 15, 2018
- Applied Materials, Inc.
- Yi-Chiau HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180033862
- Publication date Feb 1, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERMI-LEVEL UNPINNING STRUCTURES FOR SEMICONDUCTIVE DEVICES, PROCES...
- Publication number 20170365681
- Publication date Dec 21, 2017
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SBFET TRANSISTOR AND CORRESPONDING FABRICATION PROCESS
- Publication number 20170162672
- Publication date Jun 8, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Louis HUTIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DEVICE AND METHOD OF MANUFACTURE
- Publication number 20160172458
- Publication date Jun 16, 2016
- Semiconductor Components Industries, LLC
- Mohammed Tanvir Quddus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES HAVING INHOMOGENEOUS SILICIDE SCHOTTKY BARRIER CONTACTS
- Publication number 20160133526
- Publication date May 12, 2016
- TEXAS INSTRUMENTS INCORPORATED
- DEBORAH JEAN RILEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20150126011
- Publication date May 7, 2015
- Kabushiki Kaisha Toshiba
- Masahiko KURAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...
- Publication number 20140284666
- Publication date Sep 25, 2014
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Silicide Thin Film, Ultra-Shallow Junctions, Semiconductor De...
- Publication number 20140284728
- Publication date Sep 25, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A MOS TRANSISTOR HAVING A SIGMOID RES...
- Publication number 20140124866
- Publication date May 8, 2014
- STMicroelectronics S.A.
- Philippe Galy
- H01 - BASIC ELECTRIC ELEMENTS

with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

MIS contact structure with metal oxide conductor

Field effect transistor and method for manufacturing the same

MOSFET transistors with hybrid contact

Method for depinning the Fermi level of a semiconductor at an elect...

Methods for LDMOS and other MOS transistors with hybrid contact

Method for depinning the fermi level of a semiconductor at an elect...

Insulated gate field effect transistor having passivated schottky b...

Semiconductor device

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Devices for LDMOS and other MOS transistors with hybrid contact

MIS contact structure with metal oxide conductor

Semiconductor devices with shaped portions of elevated source/drain...

Method for making semiconductor device including source/drain dopan...

Fermi-level unpinning structures for semiconductive devices, proces...

MIS contact structure with metal oxide conductor

Devices and methods for a power transistor having a Schottky or Sch...

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the fermi level of a semiconductor at an elect...

MIS contact structure with metal oxide conductor

Transistors with dielectric-isolated source and drain regions

Ferroelectric-modulated Schottky non-volatile memory

Method for depinning the Fermi level of a semiconductor at an elect...

Vertical transistor structure with looped channel

Semiconductor devices with shaped portions of elevated source/drain...

Junction interlayer dielectric for reducing leakage current in semi...

Semiconductor structure and manufacturing method thereof

SBFET transistor and corresponding fabrication process

Method for depinning the Fermi level of a semiconductor at an elect...

Patents Applicationslast 30 patents

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

MOSFET TRANSISTORS WITH HYBRID CONTACT

Field Effect Transistor and Method for Manufacturing the Same

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHODS FOR LDMOS AND OTHER MOS TRANSISTORS WITH HYBRID CONTACT

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN DOPAN...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

SEMICONDUCTOR DEVICE

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

TRANSISTORS WITH DIELECTRIC-ISOLATED SOURCE AND DRAIN REGIONS

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

DEVICES AND METHODS FOR A POWER TRANSISTOR HAVING A SCHOTTKY OR SCH...

FERROELECTRIC-MODULATED SCHOTTKY NON-VOLATILE MEMORY

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD OF CONTACT FORMATION BETWEEN METAL AND SEMICONDUCTOR

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

FERMI-LEVEL UNPINNING STRUCTURES FOR SEMICONDUCTIVE DEVICES, PROCES...

SBFET TRANSISTOR AND CORRESPONDING FABRICATION PROCESS

SCHOTTKY DEVICE AND METHOD OF MANUFACTURE

DEVICES HAVING INHOMOGENEOUS SILICIDE SCHOTTKY BARRIER CONTACTS

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...

Metal Silicide Thin Film, Ultra-Shallow Junctions, Semiconductor De...

INTEGRATED CIRCUIT COMPRISING A MOS TRANSISTOR HAVING A SIGMOID RES...