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H01L29/7851

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7851with the body tied to the substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Replacement channel 2D material integration
- Patent number 12,261,209
- Issue date Mar 25, 2025
- Tokyo Electron Limited
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nitrogen-containing layers as oxidation blocking layers
- Patent number 12,261,042
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,261,169
- Issue date Mar 25, 2025
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,201
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Young-Hun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-end gate structures and method forming same
- Patent number 12,261,213
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 12,255,247
- Issue date Mar 18, 2025
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with metal interconnection directly connecting...
- Patent number 12,255,256
- Issue date Mar 18, 2025
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,135
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Kyung Yong Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,249,651
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Hyuncheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,249,606
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and methods of forming the same
- Patent number 12,249,650
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a gate with a tapering bottom portion and a ga...
- Patent number 12,243,748
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial layers for transistors
- Patent number 12,243,931
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having three-dimensional transistors and seal ri...
- Patent number 12,243,873
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Yang Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a static random-access memory (SRAM) cell with fi...
- Patent number 12,243,874
- Issue date Mar 4, 2025
- Samsung Electronics Co., Ltd.
- Kyungin Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal oxidation for gate all around nanosheet I/O device
- Patent number 12,243,941
- Issue date Mar 4, 2025
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different height cell subregions, semiconductor device having the s...
- Patent number 12,243,914
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chan Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gate structure with non-linear profile for transistors
- Patent number 12,243,924
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,210
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Chae Ho Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,237,383
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Dohee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 12,237,328
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 12,237,404
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,237,227
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Qiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial directional etch method and resulting structures
- Patent number 12,237,397
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip
- Patent number 12,237,401
- Issue date Feb 25, 2025
- Mediatek Inc.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistor devices and methods of forming same
- Patent number 12,237,419
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin smoothing and integrated circuit structures resulting therefrom
- Patent number 12,237,420
- Issue date Feb 25, 2025
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a fin field effect transistor (FinFET) comprising epit...
- Patent number 12,237,403
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency switch
- Patent number 12,237,863
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bridge channel field effect transistor with multiple inner sp...
- Patent number 12,230,685
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Sungsoo Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072015
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE STRUCTURE WITH EXTRA FIN
- Publication number 20250072038
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20250072040
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20250072008
- Publication date Feb 27, 2025
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250072028
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20250072041
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...
- Publication number 20250072039
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Nano-Pillar Transistor Structures for 3-D ICS
- Publication number 20250063780
- Publication date Feb 20, 2025
- MURATA MANUFACTURING CO., LTD.
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056859
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Jia-He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056818
- Publication date Feb 13, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL
- Publication number 20250048681
- Publication date Feb 6, 2025
- Kennametal Inc.
- Tim Guter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices and Semiconductor Dev...
- Publication number 20250048720
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chandrashekhar Prakash SAVANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...
- Publication number 20250048611
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20250046677
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yu LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20250048726
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250048706
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Jui WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250048659
- Publication date Feb 6, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM
- Publication number 20250040196
- Publication date Jan 30, 2025
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming layout pattern of static random access memory
- Publication number 20250040228
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
- Publication number 20250040180
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040198
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Cheng-Pu Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION
- Publication number 20250031380
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
BARRIER LAYERS IN SEMICONDUCTOR DEVICES
- Publication number 20250031399
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mu-Min Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...
- Publication number 20250029892
- Publication date Jan 23, 2025
- Intel Corporation
- Conor P. PULS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250031404
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...
- Publication number 20250031403
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS

with the body tied to the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Replacement channel 2D material integration

Forming nitrogen-containing layers as oxidation blocking layers

Semiconductor device and method for fabricating the same

Semiconductor device

Fin-end gate structures and method forming same

Trench contact structures for advanced integrated circuit structure...

Transistor structure with metal interconnection directly connecting...

Semiconductor device

Semiconductor device

Integrated circuit device

FinFET device and methods of forming the same

FinFET device having a gate with a tapering bottom portion and a ga...

Source/drain epitaxial layers for transistors

Integrated circuit having three-dimensional transistors and seal ri...

Method of forming a static random-access memory (SRAM) cell with fi...

Conformal oxidation for gate all around nanosheet I/O device

Different height cell subregions, semiconductor device having the s...

Gate structure with non-linear profile for transistors

Semiconductor device

Integrated circuit device

Minimizing shorting between FinFET epitaxial regions

Methods for increasing germanium concentration of surfaces of a sil...

Semiconductor device and method

Partial directional etch method and resulting structures

Semiconductor chip

Gate structures in transistor devices and methods of forming same

Fin smoothing and integrated circuit structures resulting therefrom

Structure of a fin field effect transistor (FinFET) comprising epit...

Radio frequency switch

Multi-bridge channel field effect transistor with multiple inner sp...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FINFET DEVICE STRUCTURE WITH EXTRA FIN

SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

METHOD OF FORMING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

INTEGRATED CIRCUIT DEVICES

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...

Vertical Nano-Pillar Transistor Structures for 3-D ICS

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL

Method of Manufacturing Semiconductor Devices and Semiconductor Dev...

SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM

Method for forming layout pattern of static random access memory

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION

BARRIER LAYERS IN SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...