with the gate at least partly formed in a trench

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H01L29/42352

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42352with the gate at least partly formed in a trench

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Trench gate high voltage transistor for embedded memory
- Patent number 12,048,163
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ono integration into logic CMOS flow
- Patent number 12,048,162
- Issue date Jul 23, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming top select gate trenches
- Patent number 12,021,126
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing the same
- Patent number 11,996,458
- Issue date May 28, 2024
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices and methods of manufacturing the same
- Patent number 11,925,015
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Sang-yong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor structure
- Patent number 11,848,353
- Issue date Dec 19, 2023
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stacks having silicon nitride gate-to-gate dielectric layers...
- Patent number 11,849,582
- Issue date Dec 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Inter-digitated capacitor in flash technology
- Patent number 11,832,448
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate high voltage transistor for embedded memory
- Patent number 11,812,616
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,616,127
- Issue date Mar 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stacks having silicon nitride gate-to-gate dielectric layers...
- Patent number 11,605,644
- Issue date Mar 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell and fabricating method of the same
- Patent number 11,600,709
- Issue date Mar 7, 2023
- United Microelectronics Corp.
- Chih-Hao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ono integration into logic CMOS flow
- Patent number 11,569,254
- Issue date Jan 31, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 11,502,163
- Issue date Nov 15, 2022
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate (SG) memory device and novel methods of making the SG-me...
- Patent number 11,450,678
- Issue date Sep 20, 2022
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stacks having silicon oxynitride gate-to-gate dielectric lay...
- Patent number 11,424,266
- Issue date Aug 23, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and fabricating method of the same
- Patent number 11,417,742
- Issue date Aug 16, 2022
- United Microelectronics Corp.
- Chih-Hao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,404,433
- Issue date Aug 2, 2022
- Samsung Electronics Co., Ltd.
- Wonseok Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,316,019
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing
- Patent number 11,251,278
- Issue date Feb 15, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate dielectric and inhibitor film over...
- Patent number 11,211,465
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate high voltage transistor for embedded memory
- Patent number 11,189,628
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing aluminum-silicon word li...
- Patent number 11,164,883
- Issue date Nov 2, 2021
- SanDisk Technologies LLC
- Peter Rabkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stacks having silicon oxynitride gate-to-gate dielectric lay...
- Patent number 11,114,456
- Issue date Sep 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Inter-digitated capacitor in flash technology
- Patent number 11,088,159
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device
- Patent number 10,978,480
- Issue date Apr 13, 2021
- Samsung Electronics Co., Ltd.
- Kyunghwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,872,975
- Issue date Dec 22, 2020
- Kabushiki Kaisha Toshiba
- Hiroaki Katou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices with three-dimensional channels
- Patent number 10,868,034
- Issue date Dec 15, 2020
- Samsung Electronics Co., Ltd.
- Jang-Gn Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including transistors comprising a charge tra...
- Patent number 10,833,087
- Issue date Nov 10, 2020
- Micron Technology, Inc.
- Fredrick D. Fishburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices and methods of manufacturing the same
- Patent number 10,811,421
- Issue date Oct 20, 2020
- Samsung Electronics Co., Ltd.
- Sang-yong Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY AND CORRESPONDING MANUFACTURING METHOD
- Publication number 20250006267
- Publication date Jan 2, 2025
- STMicroelectronics International N.V.
- Radouane Habhab
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240379787
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiaming Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY
- Publication number 20240324229
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY
- Publication number 20230380171
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20230343696
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW
- Publication number 20230209830
- Publication date Jun 29, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME, AND N...
- Publication number 20230067170
- Publication date Mar 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lan Yao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL AND FABRICATING METHOD OF THE SAME
- Publication number 20220336606
- Publication date Oct 20, 2022
- UNITED MICROELECTRONICS CORP.
- Chih-Hao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL AND FABRICATING METHOD OF THE SAME
- Publication number 20220271137
- Publication date Aug 25, 2022
- UNITED MICROELECTRONICS CORP.
- Chih-Hao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220149168
- Publication date May 12, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20220085181
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY
- Publication number 20220085041
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-DIGITATED CAPACITOR IN FLASH TECHNOLOGY
- Publication number 20210343738
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW
- Publication number 20210188629
- Publication date Jun 24, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
NOVEL SPLIT GATE (SG) MEMORY DEVICE AND NOVEL METHODS OF MAKING THE...
- Publication number 20210151451
- Publication date May 20, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STACKS HAVING SILICON OXYNITRIDE GATE-TO-GATE DIELECTRIC LAY...
- Publication number 20210104544
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STACKS HAVING SILICON NITRIDE GATE-TO-GATE DIELECTRIC LAYERS...
- Publication number 20210104545
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20210005615
- Publication date Jan 7, 2021
- Samsung Electronics Co., Ltd.
- SANG-YONG PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20200402998
- Publication date Dec 24, 2020
- Samsung Electronics Co., Ltd.
- Wonseok CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STACKS HAVING SILICON OXYNITRIDE GATE-TO-GATE DIELECTRIC LAY...
- Publication number 20200312867
- Publication date Oct 1, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STACKS HAVING SILICON NITRIDE GATE-TO-GATE DIELECTRIC LAYERS...
- Publication number 20200312868
- Publication date Oct 1, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
- Publication number 20200258905
- Publication date Aug 13, 2020
- Samsung Electronics Co., Ltd.
- KYUNGHWAN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-DIGITATED CAPACITOR IN FLASH TECHNOLOGY
- Publication number 20200144280
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SIDEWALL PASSIVATION AND METHOD OF MAKING
- Publication number 20200119153
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING TRANSISTORS COMPRISING A CHARGE TRA...
- Publication number 20200066726
- Publication date Feb 27, 2020
- Micron Technology, Inc.
- Fredrick D. Fishburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALUMINUM-SILICON WORD LI...
- Publication number 20200006374
- Publication date Jan 2, 2020
- SANDISK TECHNOLOGIES LLC
- Peter RABKIN
- G11 - INFORMATION STORAGE
Information Patent Application
TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY
- Publication number 20190393229
- Publication date Dec 26, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20190386019
- Publication date Dec 19, 2019
- Samsung Electronics Co., Ltd.
- Jang-Gn YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-DIGITATED CAPACITOR IN SPLIT-GATE FLASH TECHNOLOGY
- Publication number 20190273091
- Publication date Sep 5, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS

with the gate at least partly formed in a trench

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Trench gate high voltage transistor for embedded memory

Method of ono integration into logic CMOS flow

Method of forming top select gate trenches

Trench-gate MOS transistor and method for manufacturing the same

Vertical memory devices and methods of manufacturing the same

Method of fabricating semiconductor structure

Memory stacks having silicon nitride gate-to-gate dielectric layers...

Inter-digitated capacitor in flash technology

Trench gate high voltage transistor for embedded memory

Symmetric arrangement of field plates in semiconductor devices

Memory stacks having silicon nitride gate-to-gate dielectric layers...

Memory cell and fabricating method of the same

Method of ono integration into logic CMOS flow

Semiconductor structure and fabrication method thereof

Split gate (SG) memory device and novel methods of making the SG-me...

Memory stacks having silicon oxynitride gate-to-gate dielectric lay...

Memory cell and fabricating method of the same

Vertical memory devices

Symmetric arrangement of field plates in semiconductor devices

Trench-gate MOS transistor and method for manufacturing

Semiconductor device having gate dielectric and inhibitor film over...

Trench gate high voltage transistor for embedded memory

Three-dimensional memory device containing aluminum-silicon word li...

Memory stacks having silicon oxynitride gate-to-gate dielectric lay...

Inter-digitated capacitor in flash technology

Three-dimensional semiconductor memory device

Semiconductor device

Vertical memory devices with three-dimensional channels

Semiconductor devices including transistors comprising a charge tra...

Vertical memory devices and methods of manufacturing the same

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY AND CORRESPONDING MANUFACTURING METHOD

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY

METHOD OF FORMING TOP SELECT GATE TRENCHES

TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME, AND N...

MEMORY CELL AND FABRICATING METHOD OF THE SAME

MEMORY CELL AND FABRICATING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD OF FORMING TOP SELECT GATE TRENCHES

TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY

INTER-DIGITATED CAPACITOR IN FLASH TECHNOLOGY

METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW

NOVEL SPLIT GATE (SG) MEMORY DEVICE AND NOVEL METHODS OF MAKING THE...

MEMORY STACKS HAVING SILICON OXYNITRIDE GATE-TO-GATE DIELECTRIC LAY...

MEMORY STACKS HAVING SILICON NITRIDE GATE-TO-GATE DIELECTRIC LAYERS...

VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

VERTICAL MEMORY DEVICES

MEMORY STACKS HAVING SILICON OXYNITRIDE GATE-TO-GATE DIELECTRIC LAY...

MEMORY STACKS HAVING SILICON NITRIDE GATE-TO-GATE DIELECTRIC LAYERS...

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

INTER-DIGITATED CAPACITOR IN FLASH TECHNOLOGY

SEMICONDUCTOR DEVICE WITH SIDEWALL PASSIVATION AND METHOD OF MAKING

SEMICONDUCTOR DEVICES INCLUDING TRANSISTORS COMPRISING A CHARGE TRA...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALUMINUM-SILICON WORD LI...

TRENCH GATE HIGH VOLTAGE TRANSISTOR FOR EMBEDDED MEMORY

VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

INTER-DIGITATED CAPACITOR IN SPLIT-GATE FLASH TECHNOLOGY