with vertical doping variation

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CPC
H01L29/105

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/105with vertical doping variation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and semiconductor device
- Patent number 12,199,187
- Issue date Jan 14, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice with O18 enriched monol...
- Patent number 12,199,148
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 12,191,309
- Issue date Jan 7, 2025
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,205
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor system including semiconduct...
- Patent number 12,176,436
- Issue date Dec 24, 2024
- FLOSFIA INC.
- Masahiro Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D channel transistors with low contact resistance
- Patent number 12,166,079
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 12,159,943
- Issue date Dec 3, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor contacts and methods of forming the same
- Patent number 12,154,949
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tiered-profile contact for semiconductor
- Patent number 12,148,663
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 12,148,843
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices and methods of forming the same
- Patent number 12,148,673
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Dual-layer channel transistor and methods of forming same
- Patent number 12,125,920
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,125,918
- Issue date Oct 22, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with reduced defect and methods of forming same
- Patent number 12,125,892
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,119,394
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for finFET well doping
- Patent number 12,112,975
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with implant and method of manufacturing same
- Patent number 12,100,738
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for a semiconductor structure having multiple s...
- Patent number 12,087,777
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yi-Tang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 12,080,761
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved temperature uniformity
- Patent number 12,074,198
- Issue date Aug 27, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device
- Patent number 12,074,223
- Issue date Aug 27, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance semiconductor oxide material channel regions for NMOS
- Patent number 12,068,319
- Issue date Aug 20, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,062,661
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Jongho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Planar JFET Device with Reduced Gate Resistance
- Publication number 20250040166
- Publication date Jan 30, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250015081
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CONTACTS AND METHODS OF FORMING THE SAME
- Publication number 20240395871
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES
- Publication number 20240395924
- Publication date Nov 28, 2024
- STMicroelectronics International N.V.
- Salvatore CASCINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2d Channel Transistors With Low Contact Resistance
- Publication number 20240395870
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240395624
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
HETEROJUNCTION STRUCTURE WITH VARYING LAYER COMPOSITION
- Publication number 20240387718
- Publication date Nov 21, 2024
- GAN SYSTEMS INC.
- Claudio Andres Canizares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE TRAP CHARGE DENSITY REDUCTION
- Publication number 20240387274
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387287
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240379853
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED 3-D EPITAXIAL STRUCTURES FOR MOS DEVICE FABRICATION
- Publication number 20240379453
- Publication date Nov 14, 2024
- Tahoe Research, Ltd.
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-LAYER CHANNEL TRANSISTOR AND METHODS OF FORMING SAME
- Publication number 20240379873
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Like Field Effect Transistors Having High Mobility Strained Cha...
- Publication number 20240379763
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379677
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240371982
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICO...
- Publication number 20240371883
- Publication date Nov 7, 2024
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME
- Publication number 20240371964
- Publication date Nov 7, 2024
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY STRAINED CHANNEL
- Publication number 20240371941
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE EMPLOYIN...
- Publication number 20240363690
- Publication date Oct 31, 2024
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-SHEET FINFET DEVICE
- Publication number 20240339537
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240332430
- Publication date Oct 3, 2024
- Rohm Co., Ltd.
- Yuji KOGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...
- Publication number 20240321575
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO...
- Publication number 20240313091
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20240304443
- Publication date Sep 12, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Gate Structures
- Publication number 20240304671
- Publication date Sep 12, 2024
- Nicolas Louis BREIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240282822
- Publication date Aug 22, 2024
- Kokusai Electric Corporation
- Masahiro TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM SIGE CHANNEL IN NANOSHEET ARCHITECTURE
- Publication number 20240274724
- Publication date Aug 15, 2024
- Applied Materials, Inc.
- Jody A. Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20240274606
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS

with vertical doping variation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

FinFET device and method of forming same

Semiconductor device having a doped fin well

Strained-channel fin FETs

Single sided channel mesa power junction field effect transistor

Transistor and semiconductor device

Semiconductor device including superlattice with O18 enriched monol...

Method to induce strain in finFET channels from an adjacent region

Semiconductor device and manufacturing method thereof

Semiconductor device and semiconductor system including semiconduct...

2D channel transistors with low contact resistance

GaN vertical-channel junction field-effect transistors with regrown...

Transistor contacts and methods of forming the same

Tiered-profile contact for semiconductor

Semiconductor device with treated interfacial layer on silicon germ...

FinFET devices and methods of forming the same

Semiconductor device including a gate-all-around field effect trans...

Dual-layer channel transistor and methods of forming same

Semiconductor device

Transistors with reduced defect and methods of forming same

Method of manufacturing a semiconductor device and a semiconductor...

Mechanism for finFET well doping

Threshold adjustment for quantum dot array devices with metal sourc...

Semiconductor device with implant and method of manufacturing same

Systems and methods for a semiconductor structure having multiple s...

Fully strained channel

Semiconductor device with improved temperature uniformity

Semiconductor device

High performance semiconductor oxide material channel regions for NMOS

Semiconductor device

DEPFET transistor and method of manufacturing a DEPFET transistor

Patents Applicationslast 30 patents

Planar JFET Device with Reduced Gate Resistance

FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE

TRANSISTOR CONTACTS AND METHODS OF FORMING THE SAME

POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES

2d Channel Transistors With Low Contact Resistance

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

HETEROJUNCTION STRUCTURE WITH VARYING LAYER COMPOSITION

INTERFACE TRAP CHARGE DENSITY REDUCTION

FINFET DEVICES AND METHODS OF FORMING THE SAME

FINFET DEVICE AND METHOD OF FORMING SAME

SELF-ALIGNED 3-D EPITAXIAL STRUCTURES FOR MOS DEVICE FABRICATION

DUAL-LAYER CHANNEL TRANSISTOR AND METHODS OF FORMING SAME

Fin-Like Field Effect Transistors Having High Mobility Strained Cha...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

METHODS FOR MAKING SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICO...

TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME

FULLY STRAINED CHANNEL

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE EMPLOYIN...

THIN-SHEET FINFET DEVICE

SEMICONDUCTOR DEVICE

DEPFET TRANSISTOR

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...

SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

Methods For Forming Gate Structures

SEMICONDUCTOR DEVICE

UNIFORM SIGE CHANNEL IN NANOSHEET ARCHITECTURE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME