with wide bandgap charge-carrier supplying layer

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H01L29/7787

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7787with wide bandgap charge-carrier supplying layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
GaN HEMT transistor with impact energy release capability for use i...
- Patent number 12,300,746
- Issue date May 13, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with improved barrier layer
- Patent number 12,294,026
- Issue date May 6, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including an improved gate region and related manuf...
- Patent number 12,278,283
- Issue date Apr 15, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different polariz...
- Patent number 12,272,744
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device with integrated power transistor and sta...
- Patent number 12,266,724
- Issue date Apr 1, 2025
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled switching device with resistive path
- Patent number 12,266,680
- Issue date Apr 1, 2025
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,266,696
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor and method for forming same
- Patent number 12,255,252
- Issue date Mar 18, 2025
- Robert Bosch GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,243,938
- Issue date Mar 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits with dual threshold voltage transistors and...
- Patent number 12,230,636
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypassed gate transistors having improved stability
- Patent number 12,230,701
- Issue date Feb 18, 2025
- MACOM Technology Solutions Holdings, Inc.
- Khaled Fayed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-passivated nitrogen-polar III-nitride transistor
- Patent number 12,230,702
- Issue date Feb 18, 2025
- HRL Laboratories, LLC
- Daniel Denninghoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,224,339
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,218,207
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including field plate regions and manufacturing pro...
- Patent number 12,218,231
- Issue date Feb 4, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of manufacturing the same
- Patent number 12,218,206
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sunkyu Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,211,839
- Issue date Jan 28, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 12,199,028
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistors with inactive gate blocks
- Patent number 12,199,177
- Issue date Jan 14, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Abhinay Sandupatla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,176
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear HEMT devices
- Patent number 12,183,815
- Issue date Dec 31, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Abhishek Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with multi-layer barrier region
- Patent number 12,183,816
- Issue date Dec 31, 2024
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for RF integrated circuit
- Patent number 12,183,676
- Issue date Dec 31, 2024
- MONDE WIRELESS INC.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P type gallium nitride conformal epitaxial structure over thick buf...
- Patent number 12,170,328
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for power amplification
- Patent number 12,166,103
- Issue date Dec 10, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,159,918
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,932
- Issue date Dec 3, 2024
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION
- Publication number 20250072033
- Publication date Feb 27, 2025
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072034
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20250063756
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER
- Publication number 20250048669
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas S. DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250040212
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Takuya KITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE
- Publication number 20250040164
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250015136
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Ryoichi MAKINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015142
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED RESISTORS WITH INCREASED SHEET RESISTANCE FOR RF APPLICA...
- Publication number 20240429230
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Matthew King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Contact Resistance in Semiconductor Devices with Implanted Regions
- Publication number 20240421193
- Publication date Dec 19, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421220
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER
- Publication number 20240413205
- Publication date Dec 12, 2024
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUS
- Publication number 20240405118
- Publication date Dec 5, 2024
- Sony Semiconductor Solutions Corporation
- KATSUHIKO TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE
- Publication number 20240395922
- Publication date Nov 28, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Peter COPPENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240395923
- Publication date Nov 28, 2024
- Hyundai Motor Company
- Dae Hwan CHUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride-Based Device with Step-Wise Field Plate and Method...
- Publication number 20240379836
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...
- Publication number 20240363694
- Publication date Oct 31, 2024
- Genettice(Qingdao)Semiconductor Materials Co., Ltd.
- Wang MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-POWER COMPONENT BASED ON III NITRIDE COMPOUND SEMICONDUCTORS,...
- Publication number 20240347629
- Publication date Oct 17, 2024
- Frauhofer-Gesellschaft zur Forderung Der angewandten Forschung e.V.
- Philipp Döring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240339532
- Publication date Oct 10, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...
- Publication number 20240332413
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240322030
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240322008
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A HETEROSTRUCTURE FOR A HIGH ELECTRON MOBILITY TRANSISTOR AND A MET...
- Publication number 20240304715
- Publication date Sep 12, 2024
- SWEGAN AB
- Jr-Tai Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20240297227
- Publication date Sep 5, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- HAN-CHIN CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240282826
- Publication date Aug 22, 2024
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240266429
- Publication date Aug 8, 2024
- Mitsubishi Electric Corporation
- Takahiro YAMADA
- H01 - BASIC ELECTRIC ELEMENTS

with wide bandgap charge-carrier supplying layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

GaN HEMT transistor with impact energy release capability for use i...

High electron mobility transistor with improved barrier layer

HEMT transistor including an improved gate region and related manuf...

Apparatus and circuits including transistors with different polariz...

III-V semiconductor device with integrated power transistor and sta...

Voltage-controlled switching device with resistive path

Manufacturing method of semiconductor device

Vertical field-effect transistor and method for forming same

Semiconductor device and method for manufacturing the same

Apparatus and circuits with dual threshold voltage transistors and...

Bypassed gate transistors having improved stability

Self-passivated nitrogen-polar III-nitride transistor

High electron mobility transistor

Semiconductor device

Method for manufacturing semiconductor device

HEMT transistor including field plate regions and manufacturing pro...

Power semiconductor device and method of manufacturing the same

Nitride semiconductor device

Wafer, optical emission device, method of producing a wafer, and me...

Semiconductor device and method for producing same

High-electron-mobility transistors with inactive gate blocks

Semiconductor device

Non-linear HEMT devices

Type III-V semiconductor device with multi-layer barrier region

Semiconductor device for RF integrated circuit

P type gallium nitride conformal epitaxial structure over thick buf...

Semiconductor device for power amplification

Group III nitride-based transistor device

Semiconductor device

Nitride-based semiconductor device and method for manufacturing the...

Patents Applicationslast 30 patents

TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER

SEMICONDUCTOR DEVICE

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INTEGRATED RESISTORS WITH INCREASED SHEET RESISTANCE FOR RF APPLICA...

Low Contact Resistance in Semiconductor Devices with Implanted Regions

NITRIDE SEMICONDUCTOR DEVICE

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUS

HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Gallium Nitride-Based Device with Step-Wise Field Plate and Method...

ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...

HIGH-POWER COMPONENT BASED ON III NITRIDE COMPOUND SEMICONDUCTORS,...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

A HETEROSTRUCTURE FOR A HIGH ELECTRON MOBILITY TRANSISTOR AND A MET...

SEMICONDUCTOR DEVICE STRUCTURE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE