without inversion channel

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H01L29/7828

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7828without inversion channel

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,125,905
- Issue date Oct 22, 2024
- Renesas Electronics Corporation
- Yoshinori Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power conversion device, and...
- Patent number 12,027,590
- Issue date Jul 2, 2024
- Mitsubishi Electric Corporation
- Munetaka Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High precision 3D metal stacking for a plurality of 3D devices
- Patent number 11,887,897
- Issue date Jan 30, 2024
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with silicon carbide body
- Patent number 11,881,512
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including vertical field-effect transistors
- Patent number 11,688,737
- Issue date Jun 27, 2023
- Samsung Electronics Co., Ltd.
- Jung Ho Do
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gate dielectrics materials
- Patent number 11,437,485
- Issue date Sep 6, 2022
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, semiconductor constructions, and methods of forming se...
- Patent number 11,424,256
- Issue date Aug 23, 2022
- Micron Technology, Inc.
- Deepak Thimmegowda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction devices and methods for fabricating the same
- Patent number 11,342,420
- Issue date May 24, 2022
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicon carbide body
- Patent number 11,195,921
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power silicon carbide based MOSFET transistors with improved short...
- Patent number 11,164,967
- Issue date Nov 2, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with depleted heterojunction current blocking...
- Patent number 11,121,523
- Issue date Sep 14, 2021
- University of Central Florida Research Foundation, Inc.
- Dennis G. Deppe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional switch having back to back field effect transistors
- Patent number 11,031,390
- Issue date Jun 8, 2021
- Alpha and Omega Semiconductor Incorporated
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having junctionless vertical gate transistor a...
- Patent number 10,950,608
- Issue date Mar 16, 2021
- SK Hynix Inc.
- Jung-Min Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seminconductor device with spreading layer
- Patent number 10,950,719
- Issue date Mar 16, 2021
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing power device
- Patent number 10,937,859
- Issue date Mar 2, 2021
- Hangzhou Silan Microelectronics Co., Ltd.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device
- Patent number 10,923,563
- Issue date Feb 16, 2021
- Hangzhou Silan Microelectronics Co., Ltd.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gate dielectric materials
- Patent number 10,903,333
- Issue date Jan 26, 2021
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage MOSFET structures
- Patent number 10,896,885
- Issue date Jan 19, 2021
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having junctionless vertical gate transistor a...
- Patent number 10,892,262
- Issue date Jan 12, 2021
- SK Hynix Inc.
- Jung-Min Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,886,396
- Issue date Jan 5, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated vertical power transistor and bypass diode
- Patent number 10,868,169
- Issue date Dec 15, 2020
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,847,645
- Issue date Nov 24, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having reduced electrical field at the gate o...
- Patent number 10,840,367
- Issue date Nov 17, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline oxide semiconductor film, crystalline oxide semiconduct...
- Patent number 10,804,362
- Issue date Oct 13, 2020
- FLOSFIA INC.
- Rie Tokuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 10,784,338
- Issue date Sep 22, 2020
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction devices and methods for fabricating the same
- Patent number 10,777,644
- Issue date Sep 15, 2020
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including ion implanted alignment marks and me...
- Patent number 10,763,331
- Issue date Sep 1, 2020
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Kouichi Saitou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,748,838
- Issue date Aug 18, 2020
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Atsushi Ohoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and fabrication method thereof
- Patent number 10,720,332
- Issue date Jul 21, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with depleted heterojunction current blocking...
- Patent number 10,673,206
- Issue date Jun 2, 2020
- sdPhotonics LLC
- Dennis G. Deppe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING AN OHMIC CONTACT ON A WIDE-BANDGAP SEMICONDUCTOR...
- Publication number 20240222462
- Publication date Jul 4, 2024
- Hitachi Energy Ltd
- Vinoth SUNDARAMOORTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE FORMATION THEREOF
- Publication number 20220367713
- Publication date Nov 17, 2022
- ROBERT BOSCH GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20220059659
- Publication date Feb 24, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped Gate Dielectrics Materials
- Publication number 20210151578
- Publication date May 20, 2021
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20210005721
- Publication date Jan 7, 2021
- GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY O...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors, Semiconductor Constructions, and Methods of Forming Se...
- Publication number 20200058662
- Publication date Feb 20, 2020
- Micron Technology, Inc.
- Deepak Thimmegowda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DEPLETED HETEROJUNCTION CURRENT BLOCKING...
- Publication number 20200059069
- Publication date Feb 20, 2020
- University of Central Florida Research Foundation, Inc.
- DENNIS G. DEPPE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL SWITCH HAVING BACK TO BACK FIELD EFFECT TRANSISTORS
- Publication number 20190393218
- Publication date Dec 26, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20190355819
- Publication date Nov 21, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR DEVICE
- Publication number 20190326428
- Publication date Oct 24, 2019
- Panasonic Intellectual Property Management Co., Ltd.
- TSUTOMU KIYOSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING JUNCTIONLESS VERTICAL GATE TRANSISTOR A...
- Publication number 20190273081
- Publication date Sep 5, 2019
- SK HYNIX INC.
- Jung-Min MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING JUNCTIONLESS VERTICAL GATE TRANSISTOR A...
- Publication number 20190252387
- Publication date Aug 15, 2019
- SK HYNIX INC.
- Jung-Min MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190172905
- Publication date Jun 6, 2019
- HANGZHOU SILAN MICROELECTRONICS CO., LTD.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE
- Publication number 20190140049
- Publication date May 9, 2019
- HANGZHOU SILAN MICROELECTRONICS CO., LTD.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...
- Publication number 20190043980
- Publication date Feb 7, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20180330954
- Publication date Nov 15, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20180315823
- Publication date Nov 1, 2018
- Panasonic Intellectual Property Management Co., Ltd.
- TSUTOMU KIYOSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SLOTTED ACCUMULATION-MODE FIELD EFFECT TRANSISTOR (ACC...
- Publication number 20180102435
- Publication date Apr 12, 2018
- François Hébert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Ion Implantation into Silicon Carbide Using Channeling a...
- Publication number 20180069083
- Publication date Mar 8, 2018
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DEPLETED HETEROJUNCTION CURRENT BLOCKING...
- Publication number 20180019302
- Publication date Jan 18, 2018
- University of Central Florida Research Foundation, Inc.
- DENNIS G. DEPPE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL SWITCH HAVING BACK TO BACK FIELD EFFECT TRANSISTORS
- Publication number 20180006026
- Publication date Jan 4, 2018
- Alpha and Omega Semiconductor Incorporated
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
- Publication number 20170338339
- Publication date Nov 23, 2017
- Unisantis Electronics Singapore PTE LTD.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170338340
- Publication date Nov 23, 2017
- Unisantis Electronics Singapore PTE LTD.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SLOTTED ACCUMULATION-MODE FIELD EFFECT TRANSISTOR (ACC...
- Publication number 20160099351
- Publication date Apr 7, 2016
- François Hébert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Power Device
- Publication number 20140312310
- Publication date Oct 23, 2014
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...
- Publication number 20140299886
- Publication date Oct 9, 2014
- DENSO CORPORATION
- Jun KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140284707
- Publication date Sep 25, 2014
- KABUSHIKI KAISHA TOSHIBA
- Keiko Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS
- Publication number 20140284711
- Publication date Sep 25, 2014
- KABUSHIKI KAISHA TOSHIBA
- Shunsuke Katoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20140264564
- Publication date Sep 18, 2014
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Regions and Epitax...
- Publication number 20140264579
- Publication date Sep 18, 2014
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS

without inversion channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Silicon carbide semiconductor device, power conversion device, and...

High precision 3D metal stacking for a plurality of 3D devices

Method of manufacturing semiconductor device with silicon carbide body

Integrated circuit devices including vertical field-effect transistors

Doped gate dielectrics materials

Transistors, semiconductor constructions, and methods of forming se...

Heterojunction devices and methods for fabricating the same

Semiconductor device with silicon carbide body

Power silicon carbide based MOSFET transistors with improved short...

Semiconductor devices with depleted heterojunction current blocking...

Bidirectional switch having back to back field effect transistors

Semiconductor device having junctionless vertical gate transistor a...

Seminconductor device with spreading layer

Method for manufacturing power device

Power device

Doped gate dielectric materials

High-voltage MOSFET structures

Semiconductor device having junctionless vertical gate transistor a...

Transistor structures having a deep recessed P+ junction and method...

Monolithically integrated vertical power transistor and bypass diode

Transistor structures having a deep recessed P+ junction and method...

Transistor structures having reduced electrical field at the gate o...

Crystalline oxide semiconductor film, crystalline oxide semiconduct...

Field effect transistor devices with buried well protection regions

Heterojunction devices and methods for fabricating the same

Semiconductor device including ion implanted alignment marks and me...

Silicon carbide semiconductor device

Transistor and fabrication method thereof

Semiconductor devices with depleted heterojunction current blocking...

Patents Applicationslast 30 patents

METHOD FOR FORMING AN OHMIC CONTACT ON A WIDE-BANDGAP SEMICONDUCTOR...

VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE FORMATION THEREOF

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

Doped Gate Dielectrics Materials

HETEROJUNCTION DEVICES AND METHODS FOR FABRICATING THE SAME

Transistors, Semiconductor Constructions, and Methods of Forming Se...

SEMICONDUCTOR DEVICES WITH DEPLETED HETEROJUNCTION CURRENT BLOCKING...

BIDIRECTIONAL SWITCH HAVING BACK TO BACK FIELD EFFECT TRANSISTORS

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

METHOD OF PRODUCING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING JUNCTIONLESS VERTICAL GATE TRANSISTOR A...

SEMICONDUCTOR DEVICE HAVING JUNCTIONLESS VERTICAL GATE TRANSISTOR A...

POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

POWER DEVICE

TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...

TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SELF-ALIGNED SLOTTED ACCUMULATION-MODE FIELD EFFECT TRANSISTOR (ACC...

Controlled Ion Implantation into Silicon Carbide Using Channeling a...

SEMICONDUCTOR DEVICES WITH DEPLETED HETEROJUNCTION CURRENT BLOCKING...

BIDIRECTIONAL SWITCH HAVING BACK TO BACK FIELD EFFECT TRANSISTORS

METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SELF-ALIGNED SLOTTED ACCUMULATION-MODE FIELD EFFECT TRANSISTOR (ACC...

Semiconductor Power Device

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR APPARATUS

Field Effect Transistor Devices with Buried Well Protection Regions

Field Effect Transistor Devices with Buried Well Regions and Epitax...