2980560

Information

• Patent Grant
• 2980560

• References
• Source

• Patent Number

  2,980,560

• Date Filed

  Not available

• Date Issued

  Tuesday, April 18, 1961
  63 years ago

• CPC

  • H01L29/167 - further characterised by the doping material
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/18 - the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities
  • H01L21/24 - Alloying of impurity materials
  • H01L29/36 - characterised by the concentration or distribution of impurities in the bulk material
  • Y10S148/068 - Graphite masking
  • Y10S438/971 - Stoichiometric control of host substrate composition

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 438 - Semiconductor device manufacturing: process