3154838

Information

• Patent Grant
• 3154838

• References
• Source

• Patent Number

  3,154,838

• Date Filed

  Not available

• Date Issued

  Tuesday, November 3, 1964
  60 years ago

• CPC

  • H01L29/73 - Bipolar junction transistors
  • C30B15/36 - characterised by the seed
  • C30B31/02 - by contacting with diffusion material in the solid state
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/18 - the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities
  • H01L21/22 - Diffusion of impurity materials
  • H01L21/322 - to modify their internal properties
  • H01L29/06 - characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/167 - further characterised by the doping material
  • H01L29/36 - characterised by the concentration or distribution of impurities in the bulk material
  • H01L29/86 - controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
  • Y10S148/003 - Anneal
  • Y10S148/033 - Diffusion of aluminum
  • Y10S148/049 - Equivalence and options
  • Y10S148/051 - Etching
  • Y10S148/115 - Orientation
  • Y10S148/122 - Polycrystalline
  • Y10S148/151 - Simultaneous diffusion
  • Y10S438/922 - Diffusion along grain boundaries

• US Classifications

  • 438 - Semiconductor device manufacturing: process