by contacting with diffusion material in the solid state

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CPC
C30B31/02

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure Apparatus therefor

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C30B31/02by contacting with diffusion material in the solid state

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Patents Grantslast 30 patents

Information Patent Grant
Carbon-doped silicon single crystal wafer and method for manufactur...
- Patent number 11,761,118
- Issue date Sep 19, 2023
- Shin-Etsu Handotai Co., Ltd.
- Weifeng Qu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production of rounded salt particles
- Patent number 11,078,085
- Issue date Aug 3, 2021
- Allergan, Inc.
- David J. Schuessler
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Lithium tantalate single crystal substrate, bonded substrate, manuf...
- Patent number 11,021,810
- Issue date Jun 1, 2021
- Shin-Etsu Chemical Co., Ltd.
- Masayuki Tanno
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for creating a semiconductor wafer having profiled doping a...
- Patent number 10,770,613
- Issue date Sep 8, 2020
- 1366 Technologies Inc.
- Ralf Jonczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a power semiconductor device having a redu...
- Patent number 10,727,311
- Issue date Jul 28, 2020
- Infineon Technologies AG
- Gerhard Schmidt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for creating a semiconductor wafer having profiled doping a...
- Patent number 10,439,095
- Issue date Oct 8, 2019
- 1366 Technologies, Inc.
- Ralf Jonczyk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing an oxide single crystal substrate for a sur...
- Patent number 10,418,543
- Issue date Sep 17, 2019
- Shin-Etsu Chemical Co., Ltd.
- Jun Abe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon epitaxial wafer and method of producing silicon epitaxial w...
- Patent number 10,355,092
- Issue date Jul 16, 2019
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production of rounded salt particles
- Patent number 10,093,548
- Issue date Oct 9, 2018
- Allergan, Inc.
- David J. Schuessler
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor structure and method
- Patent number 9,945,048
- Issue date Apr 17, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sen-Hong Syue
- C30 - CRYSTAL GROWTH
Information Patent Grant
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Patent number 9,887,510
- Issue date Feb 6, 2018
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal diffusion doping of diamond
- Patent number 9,850,594
- Issue date Dec 26, 2017
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal diffusion doping of diamond
- Patent number 9,605,359
- Issue date Mar 28, 2017
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large area deposition and doping of graphene, and products includin...
- Patent number 9,418,770
- Issue date Aug 16, 2016
- Guardian Industries Corp.
- Vijayen S. Veerasamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for substrate pretreatment to achieve high-quality III-nitri...
- Patent number 8,728,938
- Issue date May 20, 2014
- Ostendo Technologies, Inc.
- Vladimir Ivantsov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large area deposition and doping of graphene, and products includin...
- Patent number 8,507,797
- Issue date Aug 13, 2013
- Guardian Industries Corp.
- Vijayen S. Veerasamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Mid-IR laser instrument for analyzing a gaseous sample and method f...
- Patent number 8,233,508
- Issue date Jul 31, 2012
- The UAB Research Foundation
- Sergey B. Mirov
- G01 - MEASURING TESTING
Information Patent Grant
Mid-IR instrument for analyzing a gaseous sample and method for usi...
- Patent number 7,606,274
- Issue date Oct 20, 2009
- The UAB Research Foundation
- Sergey Mirov
- G01 - MEASURING TESTING
Information Patent Grant
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Patent number 7,548,571
- Issue date Jun 16, 2009
- The UAB Research Foundation
- Sergey B. Mirov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of thin SOI to inhibit relaxation of SiGe layers
- Patent number 6,989,058
- Issue date Jan 24, 2006
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Patent number 6,960,486
- Issue date Nov 1, 2005
- University of Alabama at Brimingham Research Foundation
- Sergey B. Mirov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for contact diffusion of impurities into diamond and other c...
- Patent number 6,527,854
- Issue date Mar 4, 2003
- Mark A. Prelas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of doping silicon with phosphorus and growing oxide on silic...
- Patent number 6,461,948
- Issue date Oct 8, 2002
- Techneglas, Inc.
- James E. Rapp
- C30 - CRYSTAL GROWTH
Information Patent Grant
Phosphorous doping a semiconductor particle
- Patent number 5,926,727
- Issue date Jul 20, 1999
- Gary Don Stevens
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a silicon wafer by using a dopant foil
- Patent number 5,759,909
- Issue date Jun 2, 1998
- Robert Bosch GmbH
- Herbert Goebel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diffusing dopants into a semiconductor wafer
- Patent number 5,635,422
- Issue date Jun 3, 1997
- Motorola, Inc.
- Bohumil Lojek
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for doping silicon wafers using a solid dopant...
- Patent number 5,550,082
- Issue date Aug 27, 1996
- The University of Houston System
- John C. Wolfe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having a pn junction
- Patent number 4,819,058
- Issue date Apr 4, 1989
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Equilibration of lithium niobate crystals
- Patent number 4,725,330
- Issue date Feb 16, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Ronald J. A. Holmes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a group II-VI compound semiconductor device...
- Patent number 4,685,979
- Issue date Aug 11, 1987
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CARBON-DOPED SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTUR...
- Publication number 20220259767
- Publication date Aug 18, 2022
- Shin-Etsu Handotai Co., Ltd.
- Weifeng QU
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF ROUNDED SALT PARTICLES
- Publication number 20190039911
- Publication date Feb 7, 2019
- David J. SCHUESSLER
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD AND SYSTEM FOR MUTLILINE MIR-IR LASER
- Publication number 20180175579
- Publication date Jun 21, 2018
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE, BONDED SUBSTRATE, MANUF...
- Publication number 20180080144
- Publication date Mar 22, 2018
- Shin-Etsu Chemical Co., Ltd.
- Masayuki TANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE, BONDED SUBSTRATE, MANUF...
- Publication number 20180048283
- Publication date Feb 15, 2018
- Shin-Etsu Chemical Co., Ltd.
- Masayuki Tanno
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING AN OXIDE SINGLE CRYSTAL SUBSTRATE FOR A SUR...
- Publication number 20170373245
- Publication date Dec 28, 2017
- Shin-Etsu Chemical Co., Ltd.
- Jun Abe
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF ROUNDED SALT PARTICLES
- Publication number 20170341949
- Publication date Nov 30, 2017
- David J. SCHUESSLER
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMAL DIFFUSION DOPING OF DIAMOND
- Publication number 20170298534
- Publication date Oct 19, 2017
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- C30 - CRYSTAL GROWTH
Information Patent Application
Lithium ion Battery Cell With Single Crystal Li+- Intercalated Tita...
- Publication number 20160233502
- Publication date Aug 11, 2016
- NOKOMIS, INC.
- Adam Taylor Brant
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL W...
- Publication number 20160126318
- Publication date May 5, 2016
- Shin-Etsu Handotai Co., Ltd.
- Masahiro SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMAL DIFFUSION DOPING OF DIAMOND
- Publication number 20160097145
- Publication date Apr 7, 2016
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Substrate Pretreatment To Achieve High-Quality III-Nitri...
- Publication number 20130337639
- Publication date Dec 19, 2013
- OSTENDO TECHNOLOGIES, INC.
- Vladimir Ivantsov
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA DEPOSITION AND DOPING OF GRAPHENE, AND PRODUCTS INCLUDIN...
- Publication number 20130309475
- Publication date Nov 21, 2013
- Guardian Industries Corp.
- Vijayen S. VEERASAMY
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method For Preparing P-Type Zinc Oxide ZnO or P-Type ZnMgO
- Publication number 20130122650
- Publication date May 16, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- C30 - CRYSTAL GROWTH
Information Patent Application
MID-IR MICROCHIP LASER: ZNS:CR2+ LASER WITH SATURABLE ABSORBER MATE...
- Publication number 20120224599
- Publication date Sep 6, 2012
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
Large area deposition and doping of graphene, and products includin...
- Publication number 20110030991
- Publication date Feb 10, 2011
- Guardian Industries Corp.
- Vijayen S. Veerasamy
- C30 - CRYSTAL GROWTH
Information Patent Application
Mid-IR Laser Instrument for Analyzing a Gaseous Sample and Method f...
- Publication number 20100246610
- Publication date Sep 30, 2010
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
Mid-IR Microchip Laser: ZnS:Cr2+ Laser with Saturable Absorber Mate...
- Publication number 20100022049
- Publication date Jan 28, 2010
- The UAB Research Foundation
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
Mid-IR laser instrument for analyzing a gaseous sample and method f...
- Publication number 20070064748
- Publication date Mar 22, 2007
- Sergey Mirov
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor doping process
- Publication number 20060094214
- Publication date May 4, 2006
- LITE-ON SEMICONDUCTOR CORP.
- Chi-Ching Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
Use of thin SOI to inhibit relaxation of SiGe layers
- Publication number 20060057403
- Publication date Mar 16, 2006
- International Business Machines Corporation
- Stephen W. Bedell
- C30 - CRYSTAL GROWTH
Information Patent Application
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Publication number 20050281301
- Publication date Dec 22, 2005
- Sergey B. Mirror
- C30 - CRYSTAL GROWTH
Information Patent Application
Use of thin SOI to inhibit relaxation of SiGe layers
- Publication number 20050048778
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- C30 - CRYSTAL GROWTH
Information Patent Application
Mid-ir microchip laser: ZnS:Cr2+ laser with saturable absorber mate...
- Publication number 20030072340
- Publication date Apr 17, 2003
- Sergey B. Mirov
- C30 - CRYSTAL GROWTH

by contacting with diffusion material in the solid state

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Carbon-doped silicon single crystal wafer and method for manufactur...

Production of rounded salt particles

Lithium tantalate single crystal substrate, bonded substrate, manuf...

Methods for creating a semiconductor wafer having profiled doping a...

Method for manufacturing a power semiconductor device having a redu...

Methods for creating a semiconductor wafer having profiled doping a...

Method of manufacturing an oxide single crystal substrate for a sur...

Silicon epitaxial wafer and method of producing silicon epitaxial w...

Production of rounded salt particles

Semiconductor structure and method

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Thermal diffusion doping of diamond

Thermal diffusion doping of diamond

Large area deposition and doping of graphene, and products includin...

Method for substrate pretreatment to achieve high-quality III-nitri...

Large area deposition and doping of graphene, and products includin...

Mid-IR laser instrument for analyzing a gaseous sample and method f...

Mid-IR instrument for analyzing a gaseous sample and method for usi...

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Use of thin SOI to inhibit relaxation of SiGe layers

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Method for contact diffusion of impurities into diamond and other c...

Method of doping silicon with phosphorus and growing oxide on silic...

Phosphorous doping a semiconductor particle

Method for manufacturing a silicon wafer by using a dopant foil

Diffusing dopants into a semiconductor wafer

Method and apparatus for doping silicon wafers using a solid dopant...

Semiconductor device having a pn junction

Equilibration of lithium niobate crystals

Method of manufacturing a group II-VI compound semiconductor device...

Patents Applicationslast 30 patents

CARBON-DOPED SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTUR...

PRODUCTION OF ROUNDED SALT PARTICLES

METHOD AND SYSTEM FOR MUTLILINE MIR-IR LASER

LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE, BONDED SUBSTRATE, MANUF...

LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE, BONDED SUBSTRATE, MANUF...

METHOD OF MANUFACTURING AN OXIDE SINGLE CRYSTAL SUBSTRATE FOR A SUR...

PRODUCTION OF ROUNDED SALT PARTICLES

THERMAL DIFFUSION DOPING OF DIAMOND

Lithium ion Battery Cell With Single Crystal Li+- Intercalated Tita...

SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL W...

THERMAL DIFFUSION DOPING OF DIAMOND

Method for Substrate Pretreatment To Achieve High-Quality III-Nitri...

LARGE AREA DEPOSITION AND DOPING OF GRAPHENE, AND PRODUCTS INCLUDIN...

Method For Preparing P-Type Zinc Oxide ZnO or P-Type ZnMgO

MID-IR MICROCHIP LASER: ZNS:CR2+ LASER WITH SATURABLE ABSORBER MATE...

Large area deposition and doping of graphene, and products includin...

Mid-IR Laser Instrument for Analyzing a Gaseous Sample and Method f...

Mid-IR Microchip Laser: ZnS:Cr2+ Laser with Saturable Absorber Mate...

Mid-IR laser instrument for analyzing a gaseous sample and method f...

Semiconductor doping process

Use of thin SOI to inhibit relaxation of SiGe layers

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber mate...

Use of thin SOI to inhibit relaxation of SiGe layers

Mid-ir microchip laser: ZnS:Cr2+ laser with saturable absorber mate...