3340009

Information

• Patent Grant
• 3340009

• References
• Source

• Patent Number

  3,340,009

• Date Filed

  Not available

• Date Issued

  Tuesday, September 5, 1967
  57 years ago

• CPC

  • C30B25/00 - Single-crystal growth by chemical reaction of reactive gases
  • C01B25/06 - Hydrogen phosphides
  • C22C1/007 - Preparing arsenides or antimonides, especially of the III-VI-compound type
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/049 - Equivalence and options
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/079 - Inert carrier gas

• US Classifications

  • 423 - Chemistry of inorganic compounds
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 252 - Compositions