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AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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C30B29/40
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Parent Industries
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CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
C30B29/00
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Current Industry
C30B29/40
AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Patents Grants
last 30 patents
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Patent Grant
Bonded substrate composed of support substrate and group-13 element...
Patent number
12,359,341
Issue date
Jul 15, 2025
NGK Insulators, Ltd.
Shuhei Higashihara
C30 - CRYSTAL GROWTH
Information
Patent Grant
Ground substrate and method for producing same
Patent number
12,351,941
Issue date
Jul 8, 2025
NGK Insulators, Ltd.
Morimichi Watanabe
C30 - CRYSTAL GROWTH
Information
Patent Grant
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
Patent number
12,351,943
Issue date
Jul 8, 2025
Mitsubishi Chemical Corporation
Kenji Iso
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Method for on-silicon integration of a component III-V and on-silic...
Patent number
12,353,068
Issue date
Jul 8, 2025
Commissariat a l'Energie Atomique et Aux Energies Alternatives
Delphine Neel
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
Patent number
12,351,942
Issue date
Jul 8, 2025
SLT TECHNOLOGIES, INC.
Wenkan Jiang
C01 - INORGANIC CHEMISTRY
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Patent Grant
Semiconductor material based on metal nanowires and porous nitride...
Patent number
12,343,711
Issue date
Jul 1, 2025
Institute of Semiconductors, Chinese Academy of Sciences
Lixia Zhao
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Tungsten-infused aluminum nitride crystals and methods of forming them
Patent number
12,344,957
Issue date
Jul 1, 2025
Crystal IS, Inc.
Robert T. Bondokov
C30 - CRYSTAL GROWTH
Information
Patent Grant
III-N heteroepitaxial devices on rock salt substrates
Patent number
12,344,958
Issue date
Jul 1, 2025
Alliance for Sustainable Energy, LLC
Marshall Brooks Tellekamp
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Method for producing a layer of aluminum nitride (ALN) on a structu...
Patent number
12,338,545
Issue date
Jun 24, 2025
COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Maxime Legallais
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Grant
Substrates for III-nitride epitaxy
Patent number
12,331,426
Issue date
Jun 17, 2025
X-FAB SEMICONDUCTOR FOUNDRIES GMBH
Victor Sizov
C30 - CRYSTAL GROWTH
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Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
Patent number
12,334,340
Issue date
Jun 17, 2025
Mitsubishi Electric Corporation
Atsushi Era
C30 - CRYSTAL GROWTH
Information
Patent Grant
Piezoelectric element, method of manufacturing the same, surface ac...
Patent number
12,328,108
Issue date
Jun 10, 2025
Rohm Co., Ltd.
Noriyuki Shimoji
C30 - CRYSTAL GROWTH
Information
Patent Grant
Aluminum nitride substrate manufacturing method, aluminum nitride s...
Patent number
12,325,936
Issue date
Jun 10, 2025
Kwansei Gakuin Educational Foundation
Tadaaki Kaneko
B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information
Patent Grant
Polycrystalline ceramic substrate
Patent number
12,315,721
Issue date
May 27, 2025
QROMIS, Inc.
Vladimir Odnoblyudov
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Ultra-high ambipolar mobility cubic boron arsenide
Patent number
12,297,563
Issue date
May 13, 2025
University of Houston System
Zhifeng Ren
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Method of manufacturing gallium nitride single-crystal substrate an...
Patent number
12,290,899
Issue date
May 6, 2025
Kyocera Corporation
Yuri Osumi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Epitaxial structure
Patent number
12,281,411
Issue date
Apr 22, 2025
GlobalWafers Co., Ltd.
Jia-Zhe Liu
C30 - CRYSTAL GROWTH
Information
Patent Grant
Forming optical components using selective area epitaxy
Patent number
12,282,189
Issue date
Apr 22, 2025
Xerox Corporation
Thomas Wunderer
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for preparing a self-supporting substrate from a film base s...
Patent number
12,281,408
Issue date
Apr 22, 2025
Yiguan Information Technology (Shanghai) Co., Ltd.
Tao Jiang
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing a substrate for the epitaxial growth of a laye...
Patent number
12,270,123
Issue date
Apr 8, 2025
Soitec
Eric Guiot
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Aluminum nitride crystals having low urbach energy and high transpa...
Patent number
12,264,410
Issue date
Apr 1, 2025
Crystal IS, Inc.
Robert T. Bondokov
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Gallium nitride single crystal substrate
Patent number
12,258,678
Issue date
Mar 25, 2025
Sumitomo Chemical Company, Limited
Takashi Sato
C30 - CRYSTAL GROWTH
Information
Patent Grant
Ultrapure mineralizer and improved methods for nitride crystal growth
Patent number
12,252,812
Issue date
Mar 18, 2025
SLT TECHNOLOGIES, INC.
Mark P. D'Evelyn
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for obtaining a nitride layer
Patent number
12,252,807
Issue date
Mar 18, 2025
Commissariat a l'Energie Atomique et Aux Energies Alternatives
Guy Feuillet
C30 - CRYSTAL GROWTH
Information
Patent Grant
Hydrogen recycle system and hydrogen recycle method
Patent number
12,246,963
Issue date
Mar 11, 2025
National University Corporation Tokai National Higher Education and Research...
Shinji Kambara
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Multilayer film structure and method for producing same
Patent number
12,247,297
Issue date
Mar 11, 2025
Tosoh Corporation
Yuya Tsuchida
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Apparatus and method for manufacturing hexagonal crystals
Patent number
12,247,315
Issue date
Mar 11, 2025
LNBS CO. LTD.
Hyung Soo Ahn
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Semiconductor wafer and method for manufacturing same
Patent number
12,243,739
Issue date
Mar 4, 2025
Mitsubishi Electric Corporation
Yuki Taketomi
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Method for stripping gallium nitride substrate
Patent number
12,243,746
Issue date
Mar 4, 2025
SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
Fen Guo
C30 - CRYSTAL GROWTH
Information
Patent Grant
Aluminum nitride single crystals having large crystal augmentation...
Patent number
12,227,873
Issue date
Feb 18, 2025
Crystal IS, Inc.
Robert T. Bondokov
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK
Publication number
20250236988
Publication date
Jul 24, 2025
Sumitomo Chemical Company, Limited
Shota KANEKI
C30 - CRYSTAL GROWTH
Information
Patent Application
HETEROSTRUCTURES WITH NANOSTRUCTURES OF LAYERED MATERIAL
Publication number
20250227949
Publication date
Jul 10, 2025
The Regents of the University of Michigan
Ping Wang
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III NITRIDE STACK AND METHOD OF MANUFACTURING GROUP III NITRI...
Publication number
20250215614
Publication date
Jul 3, 2025
Sumitomo Chemical Company, Limited
Taiki YAMAMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE
Publication number
20250212478
Publication date
Jun 26, 2025
NGK Insulators, Ltd.
Ayumi SAITO
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III NITRIDE LAMINATE AND METHOD OF PRODUCING GROUP III NITRID...
Publication number
20250207296
Publication date
Jun 26, 2025
Sumitomo Chemical Company, Limited
Taiki YAMAMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTAL
Publication number
20250198052
Publication date
Jun 19, 2025
MITSUBISHI CHEMICAL CORPORATION
Kenji ISO
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND MAN...
Publication number
20250201555
Publication date
Jun 19, 2025
Sumitomo Electric Industries, Ltd.
Masataka SATANO
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...
Publication number
20250201636
Publication date
Jun 19, 2025
NGK Insulators, Ltd.
Yoshitaka KURAOKA
C30 - CRYSTAL GROWTH
Information
Patent Application
SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR...
Publication number
20250198049
Publication date
Jun 19, 2025
Shin-Etsu Chemical Co., Ltd.
Yoshihiro KUBOTA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NITRIDE CRYSTAL SUBSTRATE AND PRODUCTION METHOD FOR NITRIDE CRYSTAL...
Publication number
20250198051
Publication date
Jun 19, 2025
Sumitomo Chemical Company, Limited
Taichiro KONNO
C30 - CRYSTAL GROWTH
Information
Patent Application
Devices with compositionally graded alloy layers
Publication number
20250194189
Publication date
Jun 12, 2025
Cornell University
Shivali Agrawal
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL FILM
Publication number
20250163609
Publication date
May 22, 2025
Shin-Etsu Handotai Co., Ltd.
Tsuyoshi OHTSUKI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION...
Publication number
20250154681
Publication date
May 15, 2025
Crystal IS, Inc.
Robert T. BONDOKOV
C30 - CRYSTAL GROWTH
Information
Patent Application
HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
Publication number
20250154682
Publication date
May 15, 2025
Siltronic AG
Brian MURPHY
C30 - CRYSTAL GROWTH
Information
Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
Publication number
20250149332
Publication date
May 8, 2025
QROMIS, Inc.
Vladimir Odnoblyudov
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...
Publication number
20250146179
Publication date
May 8, 2025
NGK Insulators, Ltd.
Yoshitaka KURAOKA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES
Publication number
20250149334
Publication date
May 8, 2025
The Regents of the University of Michigan
Ping Wang
C30 - CRYSTAL GROWTH
Information
Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
Publication number
20250149333
Publication date
May 8, 2025
QROMIS, Inc.
Vladimir Odnoblyudov
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...
Publication number
20250132151
Publication date
Apr 24, 2025
Sumitomo Chemical Company, Limited
Hajime FUJIKURA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS
Publication number
20250129514
Publication date
Apr 24, 2025
Panasonic Holdings Corporation
Tomio YAMASHITA
C30 - CRYSTAL GROWTH
Information
Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
Publication number
20250132152
Publication date
Apr 24, 2025
QROMIS,INC.
Vladimir Odnoblyudov
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...
Publication number
20250129513
Publication date
Apr 24, 2025
Sumitomo Chemical Company, Limited
Taichiro KONNO
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information
Patent Application
GaN CRYSTAL AND GaN WAFER
Publication number
20250122642
Publication date
Apr 17, 2025
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
Publication number
20250122643
Publication date
Apr 17, 2025
Toyoda Gosei Co., Ltd.
Koji OKUNO
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER
Publication number
20250118552
Publication date
Apr 10, 2025
Commissariat A L'Energie Atomique et Aux Energies Alternatives
Matthew CHARLES
C30 - CRYSTAL GROWTH
Information
Patent Application
METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...
Publication number
20250109524
Publication date
Apr 3, 2025
Wisconsin Alumni Research Foundation
Shubhra S. Pasayat
C30 - CRYSTAL GROWTH
Information
Patent Application
HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUF...
Publication number
20250101630
Publication date
Mar 27, 2025
Shin-Etsu Chemical Co., Ltd.
Yoshihiro KUBOTA
C30 - CRYSTAL GROWTH
Information
Patent Application
CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS A...
Publication number
20250092571
Publication date
Mar 20, 2025
UT-Battelle, LLC
Ilia N. Ivanov
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...
Publication number
20250092565
Publication date
Mar 20, 2025
Panasonic Holdings Corporation
Junichi TAKINO
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE...
Publication number
20250092572
Publication date
Mar 20, 2025
Peking University
Xinqiang WANG
H01 - BASIC ELECTRIC ELEMENTS