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AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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C30B29/40
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Parent Industries
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CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
C30B29/00
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Current Industry
C30B29/40
AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Patents Grants
last 30 patents
Information
Patent Grant
Growth of A-B crystals without crystal lattice curvature
Patent number
12,168,839
Issue date
Dec 17, 2024
Freiberger Compound Materials GMBH
Berndt Weinert
C30 - CRYSTAL GROWTH
Information
Patent Grant
Crystal growth method and a substrate for a semiconductor device
Patent number
12,170,200
Issue date
Dec 17, 2024
Kyocera Corporation
Takehiro Nishimura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ground substrate and method for producing same
Patent number
12,163,249
Issue date
Dec 10, 2024
NGK Insulators, Ltd.
Morimichi Watanabe
C30 - CRYSTAL GROWTH
Information
Patent Grant
Control of basal plane dislocations in large aluminum nitride crystals
Patent number
12,163,250
Issue date
Dec 10, 2024
Crystal IS, Inc.
Robert T. Bondokov
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Optimized heteroepitaxial growth of semiconductors
Patent number
12,157,956
Issue date
Dec 3, 2024
United States of America as represented by the Secretary of the Air Force
Vladimir Tassev
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
Patent number
12,146,237
Issue date
Nov 19, 2024
The Regents of the University of California
Takeshi Kamikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Non-polar III-nitride binary and ternary materials, method for obta...
Patent number
12,148,612
Issue date
Nov 19, 2024
Mengyao Xie
C30 - CRYSTAL GROWTH
Information
Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
Patent number
12,142,888
Issue date
Nov 12, 2024
National Institute for Materials Science
Hiroaki Furuse
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing a nitride layer
Patent number
12,134,836
Issue date
Nov 5, 2024
Commissariat a l'Energie Atomique et Aux Energies Alternatives
Matthew Charles
C30 - CRYSTAL GROWTH
Information
Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
Patent number
12,129,572
Issue date
Oct 29, 2024
Sumitomo Chemical Company, Limited
Hajime Fujikura
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
Patent number
12,132,145
Issue date
Oct 29, 2024
Nichia Corporation
Tomoya Yamashita
C30 - CRYSTAL GROWTH
Information
Patent Grant
Group III nitride single crystal substrate and method for productio...
Patent number
12,116,697
Issue date
Oct 15, 2024
Tokuyama Corporation
Toru Nagashima
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for synthesizing indium phosphide by liquid phosphorus inje...
Patent number
12,116,690
Issue date
Oct 15, 2024
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
Lijie Fu
C30 - CRYSTAL GROWTH
Information
Patent Grant
Optimized heteroepitaxial growth of semiconductors
Patent number
12,116,695
Issue date
Oct 15, 2024
United States of America as represented by Secretary of the Air Force
Vladimir Tassev
C30 - CRYSTAL GROWTH
Information
Patent Grant
Surface emitting laser element and manufacturing method of the same
Patent number
12,113,333
Issue date
Oct 8, 2024
Kyoto University
Susumu Noda
C30 - CRYSTAL GROWTH
Information
Patent Grant
Nitride crystal substrate and method for manufacturing the same
Patent number
12,104,279
Issue date
Oct 1, 2024
Sumitomo Chemical Company, Limited
Fumimasa Horikiri
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
12,107,129
Issue date
Oct 1, 2024
Mitsubishi Chemical Corporation
Satoru Nagao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Indium phosphide single-crystal body and indium phosphide single-cr...
Patent number
12,091,773
Issue date
Sep 17, 2024
Sumitomo Electric Industries, Ltd.
Takuya Yanagisawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Nitride semiconductor substrate, laminated structure, and method fo...
Patent number
12,091,774
Issue date
Sep 17, 2024
Sumitomo Chemical Company, Limited
Takehiro Yoshida
C30 - CRYSTAL GROWTH
Information
Patent Grant
Group-III-nitride structures and manufacturing methods thereof
Patent number
12,095,002
Issue date
Sep 17, 2024
ENKRIS SEMICONDUCTOR, INC.
Kai Cheng
C30 - CRYSTAL GROWTH
Information
Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
Patent number
12,091,771
Issue date
Sep 17, 2024
SLT TECHNOLOGIES, INC.
Drew W. Cardwell
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
Patent number
12,071,707
Issue date
Aug 27, 2024
Sumitomo Chemical Company, Limited
Takehiro Yoshida
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
Patent number
12,071,706
Issue date
Aug 27, 2024
Soitec
Bruno Ghyselen
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for growing a GaN single crystal film on a buffer layer on a...
Patent number
12,065,755
Issue date
Aug 20, 2024
Haitao Zhang
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Method of manufacturing semiconductor element, semiconductor elemen...
Patent number
12,065,760
Issue date
Aug 20, 2024
Kyocera Corporation
Masahiro Araki
C30 - CRYSTAL GROWTH
Information
Patent Grant
Indium phosphide substrate
Patent number
12,065,759
Issue date
Aug 20, 2024
JX Metals Corporation
Shunsuke Oka
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of manufacturing a piezoelectric thin film
Patent number
12,063,023
Issue date
Aug 13, 2024
WAVELORD CO., LTD.
Sang Jeong An
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Linear showerhead for growing GaN
Patent number
12,060,652
Issue date
Aug 13, 2024
SINO NITRIDE SEMICONDUCTOR CO., LTD.
Ye Huang
C30 - CRYSTAL GROWTH
Information
Patent Grant
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...
Patent number
12,060,653
Issue date
Aug 13, 2024
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Superlattice layer, LED epitaxial structure, display device, and me...
Patent number
12,057,521
Issue date
Aug 6, 2024
CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
Wen Yang Huang
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
Publication number
20240420955
Publication date
Dec 19, 2024
Future Semiconductor Business, Inc
Kyusang Lee
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
Publication number
20240417882
Publication date
Dec 19, 2024
Shin-Etsu Chemical Co., Ltd.
Yoshihiro KUBOTA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND
Publication number
20240410077
Publication date
Dec 12, 2024
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Xuelun WANG
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
Publication number
20240401236
Publication date
Dec 5, 2024
NGK Insulators, Ltd.
Hiroharu KOBAYASHI
C30 - CRYSTAL GROWTH
Information
Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
Publication number
20240405159
Publication date
Dec 5, 2024
Focus Lightings Tech (Suqian) Co., Ltd.
Guochang LI
C30 - CRYSTAL GROWTH
Information
Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
Publication number
20240401238
Publication date
Dec 5, 2024
NGK Insulators, Ltd.
Kentaro NONAKA
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE, SUBSTRATE FOR EP...
Publication number
20240392474
Publication date
Nov 28, 2024
NGK Insulators, Ltd.
Kentaro NONAKA
C30 - CRYSTAL GROWTH
Information
Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
Publication number
20240384436
Publication date
Nov 21, 2024
AXT, Inc.
Morris Young
C30 - CRYSTAL GROWTH
Information
Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
Publication number
20240384432
Publication date
Nov 21, 2024
SOITEC
Bruno Ghyselen
C30 - CRYSTAL GROWTH
Information
Patent Application
ALN SINGLE CRYSTAL SUBSTRATE
Publication number
20240384435
Publication date
Nov 21, 2024
NGK Insulators, Ltd.
Hirohisa OGAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE
Publication number
20240376636
Publication date
Nov 14, 2024
Sumitomo Chemical Company, Limited
Takashi SATO
C30 - CRYSTAL GROWTH
Information
Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
Publication number
20240379352
Publication date
Nov 14, 2024
Shin-Etsu Handotai Co., Ltd.
Kazunori HAGIMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
Publication number
20240376635
Publication date
Nov 14, 2024
NGK Insulators, Ltd.
Hiroharu KOBAYASHI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
Publication number
20240368804
Publication date
Nov 7, 2024
Sumitomo Chemical Company, Limited
Takehiro YOSHIDA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
Publication number
20240371628
Publication date
Nov 7, 2024
Shin-Etsu Handotai Co., Ltd.
Kazunori HAGIMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS AND FORMING MET...
Publication number
20240363343
Publication date
Oct 31, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Shu-Jui CHANG
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP-III NITRIDE SUBSTRATE
Publication number
20240352623
Publication date
Oct 24, 2024
Panasonic Holdings Corporation
Yusuke MORI
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...
Publication number
20240344238
Publication date
Oct 17, 2024
NGK Insulators, Ltd.
Katsuhiro IMAI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
Publication number
20240332021
Publication date
Oct 3, 2024
SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
Fen GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...
Publication number
20240328030
Publication date
Oct 3, 2024
Hexatech, Inc.
Rafael Dalmau
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING COATED SUBSTRATES, COATED SUBSTRATE, AND USE T...
Publication number
20240327309
Publication date
Oct 3, 2024
Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
Kevin SCHUCK
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE...
Publication number
20240309551
Publication date
Sep 19, 2024
Panasonic Holdings Corporation
Junichi TAKINO
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF MANUFACTURING GALLIUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AN...
Publication number
20240300064
Publication date
Sep 12, 2024
KYOCERA CORPORATION
Yuri OSUMI
B24 - GRINDING POLISHING
Information
Patent Application
BISMUTH-BASED CO-CATALYST ARRANGEMENT
Publication number
20240301573
Publication date
Sep 12, 2024
The Regents of the University of Michigan
Zetian Mi
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
MANUFACTURING METHOD FOR MANUFACTURING SUBSTRATE OF NITRIDE CRYSTAL...
Publication number
20240293912
Publication date
Sep 5, 2024
KYOCERA CORPORATION
Mari YOSHIMORI HIGUCHI
C30 - CRYSTAL GROWTH
Information
Patent Application
COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...
Publication number
20240297069
Publication date
Sep 5, 2024
ENKRIS SEMICONDUCTOR, INC.
Kai CHENG
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
Publication number
20240279844
Publication date
Aug 22, 2024
MITSUBISHI CHEMICAL CORPORATION
Kenji ISO
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
METHOD FOR MANUFACTURING PHOTONIC CRYSTAL AND METHOD FOR MANUFACTUR...
Publication number
20240283220
Publication date
Aug 22, 2024
SEIKO EPSON CORPORATION
Yoshitomo KUMAI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
Publication number
20240271323
Publication date
Aug 15, 2024
Panasonic Holdings Corporation
Junichi TAKINO
C30 - CRYSTAL GROWTH
Information
Patent Application
CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED G...
Publication number
20240274746
Publication date
Aug 15, 2024
ALLIANCE FOR SUSTAINABLE ENERGY, LLC
Kevin Louis SCHULTE
H01 - BASIC ELECTRIC ELEMENTS