3342715

Information

• Patent Grant
• 3342715

• References
• Source

• Patent Number

  3,342,715

• Date Filed

  Not available

• Date Issued

  Tuesday, September 19, 1967
  57 years ago

• CPC

  • C30B29/06 - Silicon
  • B01J19/0013 - Controlling the temperature of the process
  • B01J19/088 - giving rise to electric discharges
  • C01B6/00 - Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond
  • C01B6/06 - Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium Monoborane Diborane Addition complexes thereof
  • C01B6/065 - Hydrides of arsenic or antimony
  • C01B6/11 - Preparation from boron or inorganic compounds containing boron and oxygen
  • C01B7/012 - Preparation of hydrogen chloride from the elements
  • C01B17/162 - from elemental sulfur and hydrogen
  • C01B19/04 - Binary compounds including binary selenium-tellurium compounds
  • C01B25/06 - Hydrogen phosphides
  • C01B33/04 - Hydrides of silicon
  • C30B13/12 - in the gaseous or vapour state
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S438/935 - Gas flow control

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 204 - Chemistry: electrical and wave energy
  • 422 - Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing