3353912

Information

• Patent Grant
• 3353912

• References
• Source

• Patent Number

  3,353,912

• Date Filed

  Not available

• Date Issued

  Tuesday, November 21, 1967
  57 years ago

• CPC

  • C30B29/42 - Gallium arsenide
  • C01B25/06 - Hydrogen phosphides
  • C22C1/007 - Preparing arsenides or antimonides, especially of the III-VI-compound type
  • C30B11/065 - before crystallising
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/107 - Melt
  • Y10S420/903 - Semiconductive

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 420 - Alloys or metallic compositions