3387163

Information

• Patent Grant
• 3387163

• References
• Source

• Patent Number

  3,387,163

• Date Filed

  Not available

• Date Issued

  Tuesday, June 4, 1968
  56 years ago

• CPC

  • H05B33/14 - characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
  • C09K11/0883 - Arsenides; Nitrides; Phosphides
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • H01S5/22 - having a ridge or stripe structure
  • H01S5/32 - comprising PN junctions
  • Y10S148/002 - Amphoteric doping
  • Y10S148/056 - Gallium arsenide
  • Y10S148/107 - Melt
  • Y10S438/919 - Compensation doping

• US Classifications

  • 313 - Electric lamp and discharge devices
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 372 - Coherent light generators
  • 438 - Semiconductor device manufacturing: process