Gallium arsenide

Industry

CPC
Y10S148/056

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/056Gallium arsenide

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Method for dry etching compound materials
- Patent number 11,605,542
- Issue date Mar 14, 2023
- Tokyo Electron Limited
- Peter Ventzek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dry etching compound materials
- Patent number 11,056,347
- Issue date Jul 6, 2021
- Tokyo Electron Limited
- Peter Ventzek
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication method for horizontal direction semiconductor PN juncti...
- Patent number 5,882,950
- Issue date Mar 16, 1999
- Korea Institute of Science and Technology
- Suk-Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor laser diode
- Patent number 5,801,071
- Issue date Sep 1, 1998
- Ricoh Company, Ltd.
- Takashi Takahashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser diode apparatus and method of producing the same
- Patent number 5,577,062
- Issue date Nov 19, 1996
- Ricoh Company, Ltd.
- Takashi Takahashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Compound semiconductor device with different gate-source and gate-d...
- Patent number 5,296,728
- Issue date Mar 22, 1994
- Rohm Co., Ltd.
- Yoshikazu Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanting impurities in semiconductors and semiconductor implanted...
- Patent number 5,294,557
- Issue date Mar 15, 1994
- The United States of America as represented by the Secretary of the Navy
- Frederick G. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing compound semiconductors and apparatus therefor
- Patent number 5,229,319
- Issue date Jul 20, 1993
- Kabushiki Kaisha Toshiba
- Yoshito Kawakyu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat-treating gallium arsenide monocrystals
- Patent number 5,228,927
- Issue date Jul 20, 1993
- Shin-Etsu Handotai Company Limited
- Yutaka Kitagawara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for measuring ions implanted into a semiconductor substrate
- Patent number 5,185,273
- Issue date Feb 9, 1993
- Motorola, Inc.
- Craig L. Jasper
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacture of optically transparent electrically conduct...
- Patent number 5,173,443
- Issue date Dec 22, 1992
- Northrop Corporation
- V. Warren Biricik
- G02 - OPTICS
Information Patent Grant
Ultra-high-speed photoconductive devices using semi-insulating layers
- Patent number 5,168,069
- Issue date Dec 1, 1992
- Massachusetts Institute of Technology
- Frank W. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing GaAs single crystal substrate using three stage...
- Patent number 5,137,847
- Issue date Aug 11, 1992
- Nippon Mining Co., Ltd.
- Haruhito Shimakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amino replacements for arsine, antimony and phosphine
- Patent number 5,124,278
- Issue date Jun 23, 1992
- Air Products and Chemicals, Inc.
- David A. Bohling
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductors
- Patent number 5,118,642
- Issue date Jun 2, 1992
- Daidousanso Co., Ltd.
- Akira Yoshino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a compound semiconductor device
- Patent number 5,110,751
- Issue date May 5, 1992
- Rohm Co., Ltd.
- Yoshikazu Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming heat resistant ohmic electrode
- Patent number 5,091,338
- Issue date Feb 25, 1992
- Sumitomo Electric Industries, Ltd.
- Junichi Tsuchimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor interface control using cationic ingredient...
- Patent number 5,021,365
- Issue date Jun 4, 1991
- International Business Machines Corporation
- Peter D. Kirchner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A stripe-shaped heterojunction laser with unique current confinement
- Patent number 5,010,556
- Issue date Apr 23, 1991
- Omron Tateisi Electronics Co.
- Koichi Imanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial film growth using low pressure MOCVD
- Patent number 4,994,408
- Issue date Feb 19, 1991
- Motorola Inc.
- Eric S. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heat-resistant ohmic electrode
- Patent number 4,989,065
- Issue date Jan 29, 1991
- Sumitomo Electric Industries, Ltd.
- Junichi Tsuchimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a gallium arsenide phosphide-, mixed crystal-epita...
- Patent number 4,968,642
- Issue date Nov 6, 1990
- Mitsubishi Chemical Industries, Ltd.
- Hisanori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,952,446
- Issue date Aug 28, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making buffer layers for III-V devices using solid phase...
- Patent number 4,952,527
- Issue date Aug 28, 1990
- Massachusetts Institute of Technology
- Arthur R. Calawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,946,735
- Issue date Aug 7, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively wet etching aluminum gallium arsenide
- Patent number 4,943,540
- Issue date Jul 24, 1990
- AT&T Bell Laboratories
- Fan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing III-V semiconductor layers with high effective ho...
- Patent number 4,939,102
- Issue date Jul 3, 1990
- American Telephone and Telegraph Company
- Robert A. Hamm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a superlattice heterojunction bipolar device
- Patent number 4,937,204
- Issue date Jun 26, 1990
- Sony Corporation
- Akira Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor-insulator-semiconductor structure
- Patent number 4,935,382
- Issue date Jun 19, 1990
- American Telephone and Telegraph Company
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium arsenide on sapphire heterostructure
- Patent number 4,908,074
- Issue date Mar 13, 1990
- Kyocera Corporation
- Takashi Hosoi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Dry Etching Compound Materials
- Publication number 20210296132
- Publication date Sep 23, 2021
- TOKYO ELECTRON LIMITED
- Peter Ventzek
- H01 - BASIC ELECTRIC ELEMENTS

Gallium arsenide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for dry etching compound materials

Method for dry etching compound materials

Fabrication method for horizontal direction semiconductor PN juncti...

Method for producing semiconductor laser diode

Semiconductor laser diode apparatus and method of producing the same

Compound semiconductor device with different gate-source and gate-d...

Implanting impurities in semiconductors and semiconductor implanted...

Method for producing compound semiconductors and apparatus therefor

Method for heat-treating gallium arsenide monocrystals

Method for measuring ions implanted into a semiconductor substrate

Method of manufacture of optically transparent electrically conduct...

Ultra-high-speed photoconductive devices using semi-insulating layers

Method of producing GaAs single crystal substrate using three stage...

Amino replacements for arsine, antimony and phosphine

Method for producing semiconductors

Method of manufacturing a compound semiconductor device

Process for forming heat resistant ohmic electrode

Compound semiconductor interface control using cationic ingredient...

A stripe-shaped heterojunction laser with unique current confinement

Epitaxial film growth using low pressure MOCVD

Heat-resistant ohmic electrode

Method of making a gallium arsenide phosphide-, mixed crystal-epita...

Ultra-thin semiconductor membranes

Method of making buffer layers for III-V devices using solid phase...

Ultra-thin semiconductor membranes

Method for selectively wet etching aluminum gallium arsenide

Method of growing III-V semiconductor layers with high effective ho...

Method of making a superlattice heterojunction bipolar device

Method of making a semiconductor-insulator-semiconductor structure

Gallium arsenide on sapphire heterostructure

Patents Applicationslast 30 patents

Method for Dry Etching Compound Materials