3417301

Information

• Patent Grant
• 3417301

• References
• Source

• Patent Number

  3,417,301

• Date Filed

  Not available

• Date Issued

  Tuesday, December 17, 1968
  56 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • G02F1/0009 - Materials therefor
  • G02F1/03 - based on ceramics or electro-optical crystals
  • H01L24/81 - using a bump connector
  • H01L2224/81801 - Soldering or alloying
  • H01L2924/01005 - Boron [B]
  • H01L2924/01006 - Carbon [C]
  • H01L2924/01013 - Aluminum [Al]
  • H01L2924/01019 - Potassium [K]
  • H01L2924/01023 - Vanadium [V]
  • H01L2924/0103 - Zinc [Zn]
  • H01L2924/01033 - Arsenic [As]
  • H01L2924/01041 - Niobium [Nb]
  • H01L2924/01042 - Molybdenum [Mo]
  • H01L2924/0105 - Tin [Sn]
  • H01L2924/01073 - Tantalum [Ta]
  • H01L2924/01074 - Tungsten [W]
  • Y10S148/064 - Gp II-VI compounds
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/15 - Silicon on sapphire SOS

• US Classifications

  • 359 - Optical: systems and elements
  • 148 - Metal treatment
  • 257 - Active solid-state devices