3433686

Information

• Patent Grant
• 3433686

• References
• Source

• Patent Number

  3,433,686

• Date Filed

  Not available

• Date Issued

  Tuesday, March 18, 1969
  55 years ago

• CPC

  • H01L21/76297 - Dielectric isolation using EPIC techniques
  • Y10S148/026 - Deposition thru hole in mask
  • Y10S148/029 - Differential crystal growth rates
  • Y10S148/043 - Dual dielectric
  • Y10S148/049 - Equivalence and options
  • Y10S148/05 - Etch and refill
  • Y10S148/085 - Isolated-integrated
  • Y10S148/15 - Silicon on sapphire SOS

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 216 - Etching a substrate: processes
  • 257 - Active solid-state devices