3436549

Information

• Patent Grant
• 3436549

• References
• Source

• Patent Number

  3,436,549

• Date Filed

  Not available

• Date Issued

  Tuesday, April 1, 1969
  55 years ago

• CPC

  • H01L31/1035 - the devices comprising active layers formed only by AIIIBV compounds
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S148/005 - Antimonides of gallium or indium
  • Y10S148/056 - Gallium arsenide
  • Y10S148/064 - Gp II-VI compounds
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S148/12 - Photocathodes-Cs coated and solar cell
  • Y10S148/122 - Polycrystalline
  • Y10S148/15 - Silicon on sapphire SOS

• US Classifications

  • 257 - Active solid-state devices
  • 136 - Batteries: thermoelectric and photoelectric
  • 148 - Metal treatment