3458367

Information

• Patent Grant
• 3458367

• References
• Source

• Patent Number

  3,458,367

• Date Filed

  Not available

• Date Issued

  Tuesday, July 29, 1969
  55 years ago

• CPC

  • H01L21/2205 - from the substrate during epitaxy
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/098 - Layer conversion

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices