3460240

Information

• Patent Grant
• 3460240

• References
• Source

• Patent Number

  3,460,240

• Date Filed

  Not available

• Date Issued

  Tuesday, August 12, 1969
  56 years ago

• CPC

  • H01L31/068 - the potential barriers being only of the PN homojunction type
  • H01L31/022425 - for solar cells
  • Y02E10/547 - Monocrystalline silicon PV cells
  • Y10S148/026 - Deposition thru hole in mask
  • Y10S148/041 - Doping control in crystal growth
  • Y10S148/042 - Doping, graded, for tapered etching
  • Y10S148/05 - Etch and refill
  • Y10S148/051 - Etching
  • Y10S148/067 - Graded energy gap
  • Y10S148/12 - Photocathodes-Cs coated and solar cell
  • Y10S148/122 - Polycrystalline
  • Y10S148/15 - Silicon on sapphire SOS

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 136 - Batteries: thermoelectric and photoelectric
  • 148 - Metal treatment
  • 257 - Active solid-state devices