3473976

Information

• Patent Grant
• 3473976

• References
• Source

• Patent Number

  3,473,976

• Date Filed

  Not available

• Date Issued

  Tuesday, October 21, 1969
  55 years ago

• CPC

  • H01L27/0761 - Vertical bipolar transistor in combination with diodes only
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02238 - silicon in uncombined form
  • H01L21/02255 - formation by thermal treatment
  • H01L21/31662 - of silicon in uncombined form
  • H01L21/761 - PN junctions
  • H01L21/82 - to produce devices
  • H01L27/0755 - Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/049 - Equivalence and options
  • Y10S148/05 - Etch and refill
  • Y10S148/062 - Gold diffusion
  • Y10S148/115 - Orientation

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process