3522118

Information

• Patent Grant
• 3522118

• References
• Source

• Patent Number

  3,522,118

• Date Filed

  Not available

• Date Issued

  Tuesday, July 28, 1970
  54 years ago

• CPC

  • H01L21/3065 - Plasma etching Reactive-ion etching
  • Y10S148/051 - Etching
  • Y10S148/054 - Flat sheets-substrates
  • Y10S148/079 - Inert carrier gas
  • Y10S438/974 - Substrate surface preparation

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process