3582410

Information

• Patent Grant
• 3582410

• References
• Source

• Patent Number

  3,582,410

• Date Filed

  Not available

• Date Issued

  Tuesday, June 1, 1971
  53 years ago

• CPC

  • H01L21/2254 - from or through or into an applied layer
  • H01L21/187 - by direct bonding
  • H01L21/2215 - in AIIIBV compounds
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • Y10S148/049 - Equivalence and options
  • Y10S148/059 - Germanium on silicon or Ge-Si on III-V
  • Y10S148/072 - Heterojunctions
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S438/922 - Diffusion along grain boundaries
  • Y10S438/968 - Semiconductor-metal-semiconductor

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices