Germanium on silicon or Ge-Si on III-V

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CPC
Y10S148/059

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/059Germanium on silicon or Ge-Si on III-V

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Patents Grantslast 30 patents

Information Patent Grant
Low-temperature metal-induced crystallization of silicon-germanium...
- Patent number 7,501,331
- Issue date Mar 10, 2009
- Sandisk 3D LLC
- S. Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium-carbon compositions and processes thereof
- Patent number 6,064,081
- Issue date May 16, 2000
- Lawrence Semiconductor Research Laboratory, Inc.
- McDonald Robinson
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Localized lattice-mismatch-accomodation dislocation network epitaxy
- Patent number 5,997,638
- Issue date Dec 7, 1999
- International Business Machines Corporation
- Matthew Warren Copel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wet chemical etchants
- Patent number 5,961,877
- Issue date Oct 5, 1999
- McDonald Robinson
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Silicon-germanium-carbon compositions in selective etch processes
- Patent number 5,906,708
- Issue date May 25, 1999
- Lawrence Semiconductor Research Laboratory, Inc.
- McDonald Robinson
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method of producing Si-Ge base heterojunction bipolar device
- Patent number 5,846,867
- Issue date Dec 8, 1998
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating high-dielectric constant oxides on semiconductors using...
- Patent number 5,825,055
- Issue date Oct 20, 1998
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-dielectric constant oxides on semiconductors using a Ge buffer...
- Patent number 5,473,171
- Issue date Dec 5, 1995
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of doped silicon-germanium alloy on semiconduc...
- Patent number 5,336,903
- Issue date Aug 9, 1994
- North Carolina State University at Raleigh
- Mehmet C. Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a six transistor static random access memory cell
- Patent number 5,330,929
- Issue date Jul 19, 1994
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high-dielectric constant oxides on semiconduc...
- Patent number 5,326,721
- Issue date Jul 5, 1994
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing lower contact resistance in MOS transistors
- Patent number 5,312,766
- Issue date May 17, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing lower contact resistance in MOS transistor stru...
- Patent number 5,296,387
- Issue date Mar 22, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS fabrication process, including deposition of a boron-doped diff...
- Patent number 5,281,552
- Issue date Jan 25, 1994
- AT&T Bell Laboratories
- Clifford A. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a crystal with a lattice parameter gradient
- Patent number 5,281,299
- Issue date Jan 25, 1994
- Institut Max Von Laue
- Alain Escoffier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deposition of germanium thin films on silicon dioxide employing int...
- Patent number 5,250,452
- Issue date Oct 5, 1993
- North Carolina State University
- Mehmet Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of doped silion-germanium alloy on semiconduct...
- Patent number 5,242,847
- Issue date Sep 7, 1993
- North Carolina State University at Raleigh
- Mehmet C. Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 5,183,778
- Issue date Feb 2, 1993
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor growth process
- Patent number 5,180,684
- Issue date Jan 19, 1993
- Fujitsu Limited
- Hiroshi Fujioka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming a germanium layer and a heterojunction bipolar t...
- Patent number 5,089,428
- Issue date Feb 18, 1992
- Texas Instruments Incorporated
- Douglas P. Verret
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating junction field effect transistor
- Patent number 4,983,536
- Issue date Jan 8, 1991
- GTE Laboratories Incorporated
- Emel S. Bulat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of epitaxial si-ge heterostructures by solid phase epitaxy
- Patent number 4,975,387
- Issue date Dec 4, 1990
- The United States of America as represented by the Secretary of the Navy
- Sharka M. Prokes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a defect-free semiconductor layer on insulator
- Patent number 4,962,051
- Issue date Oct 9, 1990
- Motorola, Inc.
- H. Ming Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a nonsilicon semiconductor on insulator structure
- Patent number 4,891,329
- Issue date Jan 2, 1990
- University of North Carolina
- Arnold Reisman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solution growth of lattice mismatched and solubility mismatched het...
- Patent number 4,876,210
- Issue date Oct 24, 1989
- The University of Delaware
- Allen M. Barnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on...
- Patent number 4,861,393
- Issue date Aug 29, 1989
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing silicon-germanium alloys
- Patent number 4,857,270
- Issue date Aug 15, 1989
- Komatsu Electronic Metals Co., Ltd.
- Shinji Maruya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of introducing impurity species into a semiconductor structu...
- Patent number 4,824,798
- Issue date Apr 25, 1989
- Xerox Corporation
- Robert D. Burnham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making group IV single crystal layers on group III-V subs...
- Patent number 4,757,030
- Issue date Jul 12, 1988
- Cornell Research Foundation, Inc.
- Gregory J. Galvin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor deposition method and device
- Patent number 4,707,216
- Issue date Nov 17, 1987
- University of Illinois
- Hadis Morkoc
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low-temperature metal-induced crystallization of silicon-germanium...
- Publication number 20070246764
- Publication date Oct 25, 2007
- SanDisk 3D, LLC
- S. Brad Herner
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon-germanium-carbon compositions and processes thereof
- Publication number 20020081861
- Publication date Jun 27, 2002
- McDonald Robinson
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...

Germanium on silicon or Ge-Si on III-V

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low-temperature metal-induced crystallization of silicon-germanium...

Silicon-germanium-carbon compositions and processes thereof

Localized lattice-mismatch-accomodation dislocation network epitaxy

Wet chemical etchants

Silicon-germanium-carbon compositions in selective etch processes

Method of producing Si-Ge base heterojunction bipolar device

Fabricating high-dielectric constant oxides on semiconductors using...

High-dielectric constant oxides on semiconductors using a Ge buffer...

Selective deposition of doped silicon-germanium alloy on semiconduc...

Method of making a six transistor static random access memory cell

Method of fabricating high-dielectric constant oxides on semiconduc...

Method of providing lower contact resistance in MOS transistors

Method of providing lower contact resistance in MOS transistor stru...

MOS fabrication process, including deposition of a boron-doped diff...

Method for manufacturing a crystal with a lattice parameter gradient

Deposition of germanium thin films on silicon dioxide employing int...

Selective deposition of doped silion-germanium alloy on semiconduct...

Method of producing a semiconductor device

Semiconductor growth process

Method for forming a germanium layer and a heterojunction bipolar t...

Method of fabricating junction field effect transistor

Formation of epitaxial si-ge heterostructures by solid phase epitaxy

Method of forming a defect-free semiconductor layer on insulator

Method of forming a nonsilicon semiconductor on insulator structure

Solution growth of lattice mismatched and solubility mismatched het...

Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on...

Process for manufacturing silicon-germanium alloys

Method of introducing impurity species into a semiconductor structu...

Method of making group IV single crystal layers on group III-V subs...

Semiconductor deposition method and device

Patents Applicationslast 30 patents

Low-temperature metal-induced crystallization of silicon-germanium...

Silicon-germanium-carbon compositions and processes thereof